DATA SHEET NEC / SILICON SWITCHING DIODE 1$$123 SILICON EPITAXIAL DOUBLE DIODES : SERIES CONNECTED MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters @ Low capacitance: C, = 4.0 pF MAX. 2840.2 High speed switching: ty = 9.0 ns MAX. 2 15 | 0.651315 @ Wide applications including switching, limitter, clipper. 3 | @ Double diode configuration assures economical use. a} 8) t 2 3 = oe ABSOLUTE MAXIMUM RATINGS 3 1 ' z Maximum Voltages and Currents (Tg = 25 C) +r 3 Peak Reverse Voltage Vam 70 Vv DC Reverse Voltage Vr 70 Vv Marking Peak Forward Current lem 200 mA 3 | ; Average Rectified Current lo 100 mA * # DC Forward Current lr 100 mA J | | 3| Maximum Temperatures * , c= Junction Temperature Tj 150 C cont eviene S Storage Temperature Range Totg 55 to +150 c Anode Thermal Resistance 2 Junction to Ambient* Rth(j-a) 1.0 C/mW PJ3 Marking : A7 Junction to Ambient Reh (j-a) 0.67 C/mW 1 Cathode * Both diodes loaded simultaneously. Cathode ELECTRICAL CHARACTERISTICS (Tg = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Veq 600 715 mv ip=1.0mA Forward Voltage Veo 750 855 mV Ip = 10mA VE3 850 1100 mv {pF =50mMA VE4 g00 1300 mv ip = 100mA Reverse Current IR 1.0 BA VR=70V Capacitance Ct 2.5 4.0 pF VR =O, f = 1.0 MHz Reverse Recovery Time ter 9.0 ns IF ema VR V,RL = 1002 Forward Recovery Voitage Ver 1.75 Vv lf =10mA See Test Circuit. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16317EJ4VODS00 (4th edition) (Previous No. DC-1053A) Date Published July 2002 N GP(kK) . Printed in Japan NEC Corporation 1985 NEC 1$S$123 TYPICAL CHARACTERISTICS (Tg = 25 C) IF Forward CurrentmA AVeForward Voltage Temperature Coefficient mV/C FORWARD CURRENT vs. REVERSE CURRENT vs. FORWARD VOLTAGE REVERSE VOLTAGE 1000 10 500 5.0 Ta=100 C 200 2.0 100 1.0 50 05 x 20 ; 0.2 10 = 0.1 5.0 = 0.05 a 2.0 SP 9.02 g 1.0 5 0.01 05 8 0.005 oe 0.2 | 0.002 a 0.1 _ 0.001 0.05 0.0005 0.02 0.0002 0.01 0.0001 0 0.2 0.4 0.6 08 1.0 1.2 0 10 20 30 40 50 60 70 Vp -Forward VoltageV VpReverse VoltageV FORWARD VOLTAGE TEMPERATURE TERMINAL CAPACITANCE vs. COEFFICIENT vs FORWARD CURRENT REVERSE VOLTAGE 3.0 3.0 f=1.0 MHz Ta=25 C Le ms 8 2.0 8 2.0 Oo PA c [ele oe & ~Y PA mS E 1.0 5 10 KE | J 0 0 01 02 05 10 2.0 6010 20 60 100 1 2 4 6 8 10 20 30 lp Forward CurrentmA Vp-Reverse VoltageV Data Sheet D16317EJ4VODS NEC 1$$123 SWITCHING CHARACTERISTICS TEST CIRCUIT Forward recovery voltage : Vz, Circuit Capacitance C<1 pF Wave forms t output signal if Lt , IR | 1kQ 4500 ; IF=10 mA 90 2% Rg=50 2 oscilloscope ty=20 ns pulse D.U.T. Rj=50 tp=120 ns Generator tpS$0.35 ns 110% Duty Cycles 1 % t tp t r input signal Test circuit Reverse recovery time : ter Circuit Capacitance C<1 pF csp ' tr tp 1 t roe T10 9 Rg=50 { sampling % tpS0.6 ns pulse i seeuascope tp=:100 ns Generator L--+--~--- t,<0.35 n 90 % Duty Cycle<5 % vp V=Vp+ipxRs input signal Test circuit Ip = 10mA, VRQ = 1.0 V Data Sheet D16317EJ4VODS Wave forms ip=1 ma output signal NEC 1$$123 The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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