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©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA25S125P Rev. 1.6
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
February 2016
Absolute Maximum Ratings
Thermal Characteristics
Notes:
1: Limited by Tjmax
Symbol Description FGA25S125P_SN00337 Unit
VCES Collector to Emitter Voltage 1250 V
VGES Gate to Emitter Voltage 25 V
ICCollector Current @ TC = 25oC50 A
Collector Current @ TC = 100oC25 A
ICM (1) Pulsed Collector Current 75 A
IFDiode Continuous Forward Current @ TC = 25oC50 A
Diode Continuous Forward Current @ TC = 100oC25 A
PDMaximum Power Dissipation @ TC = 25oC250 W
Maximum Power Dissipation @ TC = 100oC125 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction to Case, Max - 0.6 oC/W
RJA Thermal Resistance, Junction to Ambient, Max - 40 oC/W
FGA25S125P
1250 V, 25 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, F airchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability . This device is designed
for induction heating and microwave oven.
GECTO-3PN
G
E
C
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGA25S125P Rev. 1.6
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGA25S125P FGA25S125P
_SN00337 TO-3PN - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1250 - - V
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 1mA -1.2-V/
oC
ICES Collector Cut-Off Current VCE = 1250V, VGE = 0V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 25mA, VCE = VGE 4.5 6.0 7.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 25A, VGE = 15V
TC = 25oC-1.82.35
V
IC = 25A, VGE = 15V
TC = 125oC-2.05- V
IC = 25A, VGE = 15V,
TC = 175oC-2.16- V
VFM Diode Forward Voltage IF = 25A, TC = 25oC-1.72.4V
IF = 25A, TC = 175oC-2.1- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
- 2150 - pF
Coes Output Capacitance - 48 - pF
Cres Reverse Transfer Capacitance - 36 - pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600V, IC = 25A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
-24-ns
trRise Time - 250 - ns
td(off) Turn-Off Delay Time - 502 - ns
tfFall Time - 138 - ns
Eon Turn-On Switching Loss - 1085 - uJ
Eoff Turn-Off Switching Loss - 580 - uJ
Ets Total Switching Loss - 1665 - uJ
td(on) Turn-On Delay Time
VCC = 600V, IC = 25A,
RG = 10, VGE = 15V,
Resistive Load,, TC = 175oC
-21.2- ns
trRise Time - 304 - ns
td(off) Turn-Off Delay Time - 490 - ns
tfFall Time - 232 - ns
Eon Turn-On Switching Loss - 1310 - uJ
Eoff Turn-Off Switching Loss - 952 - uJ
Ets Total Switching Loss - 2262 - uJ
QgTotal Gate Charge VCE = 600V, IC = 25A,
VGE = 15V
- 204 - nC
Qge Gate to Emitter Charge - 15 - nC
Qgc Gate to Collector Charge - 103 - nC
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGA25S125P Rev. 1.6
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Va riant Current Level
0.0 2.0 4.0 6.0 8.0 10.0
0
40
80
120
160
200
15V
9V
10V
VGE = 7V
8V
20V
TC = 175oC
17V
12V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0.0 2.0 4.0 6.0 8.0 10.0
0
40
80
120
160
200
7V
VGE=17V
20V 15V
12V
9V
10V
8V
TC = 25oC
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
03691215
0
20
40
60
80
100 Comm on Em itter
VCE = 20V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Gate -Emitter Voltage,VGE [V]
0.0 1.0 2.0 3.0 4.0 5.0 6.0
0
40
80
120
160
200
Comm on Emitter
VGE = 15V
TC = 25oC
TC = 175oC ---
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
4 8 12 16 20
0
5
10
15
20
IC = 12.5A
25A
50A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
50A
25A
IC = 12.5A
Comm on Em itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [oC]
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGA25S125P Rev. 1.6
Typical Performance Characteristics
Figure 7. Saturatio n Voltage vs. VGE Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-on Charac teristics vs. Figure 12. Tu rn-off Characteristics vs.
Gate Resistance Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 25A
12.5A 50A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V ]
Gate-E m itter Voltage, VGE [V]
1 5 10 15 20 25 30
10
100
1000
5000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
0 30 60 90 120 150 180 210
0
3
6
9
12
15 Common Emitter
TC = 25oC
600V
400V
VCC = 200V
Gate-E mitter Voltage, VGE [V]
Gate Charge, Qg [nC]
1 10 100 1000
0.01
0.1
1
10
100
1ms
10ms
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10s
100s
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
10 20 30 40 50 60 70
10
100
1000
Common Em itter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistanc e, RG []
10 20 30 40 50 60 70
10
100
1000
10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Gate Resistanc e, RG []
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGA25S125P Rev. 1.6
Typical Performance Characteristics
Figure 13. Turn-on Charac teristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss vs. Figure 16. Switching Loss vs.
Gate Resistance Collector Current
Figure 17. Turn off Switching Figure 18. Forward Characteristics
SOA Characteristics
10 20 30 40 50
1
10
100
1000
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
tr
td(on)
Switching Time [ns]
Coll ec t or C u rren t, IC [A]
10 20 30 40 50
40
100
1000
Com m o n Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Coll ec t or C u rren t, IC [A]
10 20 30 40 50 60 70
100
1000
5000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [uJ]
Gate Resistance, RG []
10 20 30 40 50
100
1000
10000
Co mmon Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
01234
0.1
1
10
100
TC = 25oC
TC = 175oC
Forward Voltage, VF [V]
Forward Current, IF [A]
1 10 100 1000
1
10
100
Safe Operating A rea
VGE = 15V, TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage , VCE [V ]
FGA25S125P — 1250 V, 25 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGA25S125P Rev. 1.6
Typical Performance Characteristics
Figure 19. Transient Thermal Impedance of IGBT
1E-5 1E-4 1E-3 0.01 0.1 1 10 100
0.06
0.1
0.7
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t
1
P
DM
t
2
R
0.50
16.20
15.40
5.20
4.80
20.10
19.70
2.20
1.80
3.70
3.30
3.20
2.80
1.20
0.80
5.45 5.45
18.90
18.50
1.85
0.55
M
1.65
1.45
R
0.50
5.00
4.60
2.60
2.20
0.75
0.55
2.00
1.60
3° 4°
3°
3.30
3.10
7.20
6.80
13.80
13.40
16.96
16.56
20.30
19.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAWING FILE NAME:
TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
13
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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