2SK3502-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings Unit V 600 A 12 A 48 V 30 A 12 mJ 183 kV/s 20 kV/s 5 2.16 W 70 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage VISO *5 2 kVrms *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch < 150C = *3 IF < = BVDSS, Tch < = 150C *4 VDS < = 600V *5 t=60sec, f=60Hz = -ID, -di/dt=50A/s, Vcc < Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID=1mA ID= 250A VDS=VGS Tch=25C VDS=600V VGS=0V Tch=125C VDS=480V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=5A VGS=10V Min. 4 RGS=10 V CC=250V ID=10A VGS=10V L=2.33mH Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Typ. 600 3.0 Max. 5.0 25 250 100 0.75 10 0.58 8 1200 1800 140 210 6 9 17 26 15 23 35 53 7 11 30 45 11 16.5 10 15 12 1.00 0.75 5.0 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.79 58.0 Units C/W C/W 1 2SK3502-01MR FUJI POWER MOSFET Characteristics 100 Allowable Power Dissipation PD=f(Tc) 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V 450 400 80 IAS=5A 350 300 PD [W] EAS [mJ] 60 40 250 IAS=8A 200 150 IAS=12A 20 100 50 0 0 0 25 50 75 100 125 150 0 25 50 Tc [C] 100 125 150 Typical Transfer Characteristic Typical Output Characteristics ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID=f(VDS):80s Pulse test,Tch=25C 22 75 starting Tch [C] 20V 20 10V 8V 7.5V 18 10 16 ID[A] ID [A] 14 12 7.0V 10 1 8 6 VGS=6.5V 4 0.1 2 0 0 2 4 6 8 0 10 12 14 16 18 20 22 24 26 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 2.0 100 VGS=6.5V 7.0V 1.5 gfs [S] RDS(on) [ ] 10 7.5V8V 10V 20V 1.0 1 0.5 0.1 0.0 0.1 1 10 0 5 10 15 20 ID [A] ID [A] http://store.iiic.cc/ 2 2SK3502-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 6.5 1.8 6.0 1.6 5.5 1.4 5.0 VGS(th) [V] RDS(on) [ ] max. 1.2 1.0 max. 4.5 4.0 3.5 min. 3.0 0.8 2.5 typ. 0.6 2.0 1.5 0.4 1.0 0.2 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25C 24 50 75 100 125 150 Tch [C] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 22 20 Vcc= 120V 18 480V C [F] 14 12 10 100p Coss 8 6 10p Crss 4 2 0 1p 0 10 20 30 40 50 60 70 80 10 -1 10 0 100 10 1 10 2 10 3 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C t=f(ID):Vcc=300V, VGS=10V, RG=10 10 2 tr 10 td(off) t [ns] IF [A] VGS [V] 16 Ciss 1n 300V td(on) 10 1 tf 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 2.00 VSD [V] 10 0 10 1 ID [A] http://store.iiic.cc/ 3 Zth(ch-c) [C/W] 2SK3502-01MR 10 1 10 0 10 -1 10 -2 10 -3 FUJI POWER MOSFET Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 2 Avalanche Current IAV [A] 10 Maximum Avalanche Current vs Pulse width IAV=f(tAV ):starting Tch=25 C,Vcc=60V 10 1 10 0 10 Single Pulse -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.cp.jp/denshi/scd/ http://store.iiic.cc/ 4