UGF10DCT-E3/45 - Vishay [General Semiconductor]

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT

Vishay General Semiconductor

Document Number: 88549

Revision: 07-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Dual Common Cathode Ultrafast Rectifier

FEATURES

• Glass passivated chip junction

• Ultrafast recovery times

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching power supplies, freewheeling diodes,

dc-to-dc converters and polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV) 5 A x 2

VRRM 100 V, 150 V, 200 V

IFSM 55 A

trr 25 ns

VF0.895 V

TJ max. 150 °C

BYQ28E & UG10 BYQ28EF & UGF10

BYQ28EB & UGB10

CASE

PIN 2

PIN 1

PIN 3

TO-220AB

PIN 1

PIN 2

HEATSINK

PIN 2

PIN 1

PIN 3

ITO-220AB

TO-263AB

123

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL UG10BCT UG10CCT UG10DCT

UNIT

BYQ28E-100 BYQ28E-150 BYQ28E-200

Maximum repetitive peak reverse voltage VRRM 100 150 200 V

Working peak reverse voltage VRWM 100 150 200 V

Maximum DC blocking voltage VDC 100 150 200 V

Maximum average forward rectified current at TC = 100 °C total device

per diode IF(AV)

5 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode IFSM 55 A

Non-repetitive peak reverse current per diode at tp = 100 µs IRSM 0.2 A

Electrostatic discharge capacitor voltage,

human body model: C = 250 pF, R = 1.5 kΩ VC 8 kV

Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min VAC 1500 V

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88549

Revision: 07-Jan-08

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Note:

(1) Automotive grade AEC Q101 qualified

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Maximum instantaneous forward voltage

per diode (1)

IF = 10 A

IF = 5 A

TJ = 25 °C

TJ = 150 °C

1.25

1.10

0.895

Maximum reverse current per diode at

working peak reverse voltage

TJ = 25 °C

TJ = 100 °C IR 10

200 µA

Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM t

rr 25 ns

Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns

Maximum stored charge per diode IF = 2 A, dI/dt = 20 A/µs, VR = 30 V, Irr = 0.1 IRM Q

rr 9nC

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL UG10 UGF10 UGB10

UNIT

BYQ28E BYQ28EF BYQ28EB

Typical thermal resistance per diode, junction to ambient RθJA 50 55 50 °C/W

Typical thermal resistance per diode, junction to case RθJC 4.5 6.7 4.8

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube Tube

ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube

TO-263AB BYQ28EB-200-E3/45 1.77 45 50/tube Tube

TO-263AB BYQ28EB-200-E3/81 1.77 81 800/reel Tape reel

TO-220AB BYQ28E-200HE3/45 (1) 1.80 45 50/tube Tube

ITO-220AB BYQ28EF-200HE3/45 (1) 1.95 45 50/tube Tube

TO-263AB BYQ28EB-200HE3/45 (1) 1.77 45 50/tube Tube

TO-263AB BYQ28EB-200HE3/81 (1) 1.77 81 800/reel Tape reel

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT

Vishay General Semiconductor

Document Number: 88549

Revision: 07-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

050 100 150

Resistive or Inductive Load

Average Forward Current (A)

Case Temperature (°C)

100

1100

= 105 °C

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

100

0.1

0.01

0.2 0.4 0.81.40.6 1.0 1.2

TJ = 100 °C

TJ = 125 °C

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

Figure 4. Typical Reverse Characteristics Per Diode

Figure 5. Reverse Switching Characteristics Per Diode

Figure 6. Typical Junction Capacitance Per Diode

100

1000

0.1

200 10040 60 80

TJ = 100 °C

TJ = 125 °C

TJ = 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (µA)

25 50 75 100 125

Stored Charge/Reverse Recovery Time

(nC/ns)

Junction Temperature (°C)

at 2 A, 20 A/µs

at 5 A, 50 A/µs

at 1 A, 100 A/µs

at 5 A, 50 A/µs

at 1 A, 100 A/µs

at 2 A, 20 A/µs

100

0.1 1 10

TJ = 125 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Reverse Voltage (V)

Junction Capacitance (pF)

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88549

Revision: 07-Jan-08

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AB

0.113 (2.87)

0.103 (2.62)

0.370 (9.40)

0.360 (9.14)

0.415 (10.54) MAX.

0.635 (16.13)

0.625 (15.87)

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.105 (2.67)

0.095 (2.41)

0.104 (2.65)

0.096 (2.45) 0.205 (5.20)

0.195 (4.95)

0.035 (0.90)

0.028 (0.70)

0.154 (3.91)

0.148 (3.74)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.145 (3.68)

0.135 (3.43)

0.350 (8.89)

0.330 (8.38)

1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

0.603 (15.32)

0.573 (14.55)

ITO-220AB

0.076 (1.93) REF.

45° REF.

321

0.404 (10.26)

0.384 (9.75)

0.076 (1.93) REF.

0.600 (15.24)

0.580 (14.73)

0.560 (14.22)

0.530 (13.46)

0.057 (1.45)

0.045 (1.14)

0.057 (1.45)

0.045 (1.14)

0.191 (4.85)

0.171 (4.35)

0.671 (17.04)

0.651 (16.54)

0.035 (0.89)

0.025 (0.64)

0.205 (5.21)

0.195 (4.95)

0.025 (0.64)

0.015 (0.38)

0.105 (2.67)

0.095 (2.41)

0.028 (0.71)

0.020 (0.51)

0.110 (2.79)

0.100 (2.54)

7° REF.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.110 (2.79)

0.100 (2.54)

0.190 (4.83)

0.170 (4.32)

7° REF.

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.350 (8.89)

0.330 (8.38)

TO-263AB

Mounting Pad Layout

0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) MIN.

0.33 (8.38) MIN.

0.42 (10.66) MIN.

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

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Revision: 12-Mar-12 1Document Number: 91000

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