18 1845A Si-Di =1$1845: 400V 3a (6x13mmB) BY 252. ..255, BY 226...227, BYW 17/400, ++ 18 1845 B Si-Di =181845: 600V 31a (6x13mmg) BY 253...255, BY 226...227, BYW 17/600, ++ 18 18456 Si-Di =181845: 800V 31a (6x13mm8) BY 254...255, BY 227, BYW 17/800, ++ 1S 1845 D Si-Di =181845: 1000V 3la (6x13mmB} BY 255, BY 227, BYW 17/1000, BYX 86, ++ 18 1845 E Si-Di =181845: 1200V 31a (6x13mmB) BY 255, BY 227, BYW 17/1200, BYX 87, ++ 1S 1846(A....E) _ SieDi -2181845(A...E} 1A _ ; 3a (6x13mmd) 181845(A...} TS1847(AE) SEDI P Rr, 200... 1200V, 8A(Tc=50), Uf<TV(10A) Ba 7 ____ BYX 42/..., BYX 98/... - 18 1848(A...E) Si-Di_ PRr, 200...1200V, 22A(Tc=50), Uf<1V(24A) 73a SOD-5_ 1$71849(R) Sak Si-Di Dual, Rr, 100V, 1,5A, Uf<0,9V(0,75A) 1e/h (18x12x5) x BY 2554 Bia (2x BY 226...207, 2x BY 261...255,44)4 18 1850(R} Si-Di =181849: 200V 12e/h (13x12x5) 2x BY 2554 31a (2x BY 226, ..227, 2x BY 251...255,44)4 1S 1851(R) Si-Di =181849: 400V jem (13x12x5) x BY 2554 Sa (2x BY 226...227, 2x BY 252...255,++)4 1 1855 Nec Si-Di Snap-off-Di, SS 31a 00-7 : : 1 1856 Nec Si-Di Snap-otf-Di, SS Koax sop-31 - 181857) Nec Si-Di Snap-off-Di, SS Koax S0D-31 181858 Nec =sSi-Di__CSSchottky-Di, SS, 10V, 0,03A, <ins Koax ___-S0D-31 : BAT 19, 1S$88, 185106 . 18 1860 Nec Si-Di Schottky-Di, UHF Mx, 855MHz, 3V, 30mA - 31a 00-7 _ BA 480...481, BAR 19, BAT 29 - 1S 1861 Int Si-Di P Rr, 1000V, 40A(To=104), Uf1,2V(120A) 32 DO-5 / ~ BYX 56/1000, BYX97/1200=~C*C:SCSS 18186200 In SieDi__ PR, 1000, BOA(TC=126), Uf<1,5V(180A) 32 _D0-5 DS 75-118 1 1863 Int Si-Di P Rr, 100V, 150A(To=116), Uf<1,5V(500A) 73a DO-30 ~1N4587....96 OO 18 1864 Si-Di =181863: 150V 73a D0-30 1N4588....96 1S 1865 Si-Di =1$1863: 200V 73a DO-30 1N4588...96 1S 1866 Si-Di =181863: 300V 73a 00-30 1N4589...96 18 1867 Si-Di =181863: 400V 73a DO-30 1N4590...96 18 1868 Si-Di =1$1863: 500V 73a DO-30 1N4591...96 1S 1869 Si-Di =181863: 600V 73a D0-30 1N4592...96 1$ 1870 Si-Di =181863: 800V 73a 00-30 1N4593...96 181871 SDE =1$1863: 1000V 73a D0-30 1N4594...96 _ 1 1872 int Si-Di P Rr, 100V, 250A(Tc=107), Ufct 5V(800A) 73a ~00-9 1N3735...44 : 18 1873 Si-Di =181872: 150V 73a =00-9 1N3736...44 1$ 1874 Si-Di =181872: 200V 73a ~D0-9 1N3736...44 18 1875 Si-Di =181872: 300V 73a ~D0-9 1N3737...44 18 1876 Si-Di =181872: 400V 73a ~00-9 1N3738...44 1 1877 Si-Di =1$1872: 500V 73a =00-9 1N3739...44 18 1878 Si-Di =181872: 600V 73a ~D0-9 1N3740...44 1 1879 Si-Di =1$1872: 800V 73a ~00-9 1N3741...44 1 1880 Si-Di =1$1872: 1000V 73a =00-9 1N3742...44 1S 1881 Si-Di =181872: 1200V 73a =D0-9 1N3743...44 18 1882 Si-Di =181872: 1400V Ba 09 1N3744 oo 18 1885 Tos Si-Di Rr, 100, 1A, Uf<1,2V(1,5A) 3la p0-15 BY 133 3la BY 126...127, BY 133...135, 1N4002...07, +4 18 1886 Si-Di =181885: 200V 3ta D0-15 BY 133 3la BY 126...127, BY 133...134, 1N4003...07, ++ 1 1887 Si-Di =181885: 400V 31a DO-15 BY 133 3la BY 126...127, BY 133...134, 1N4004...07, ++ 18 1888 _ SEDI __=1$1885; 600V _. Sta _DO-15 BY123, 3a BY 126...127, BY 133...134, 1N4005...07, ++ + 1890 Tos Si-Di Rr, 600V, 1,2A, Uf<1,2V(1,5A) 34a DO-1 BY 226...227, BY 253...255, 1N5397...99, ++ 1S 1891 Si-Di =1$1890: 800V 34a D0-1 BY 227, BY 254...255, 1N5398...99, ++ 1$18920 Si-Di =1$1890: 1000V__ _ 34a D0-1 BY 227, BY 255, BYX 86, 1N5398.,.99, +4 ; 181803 Sak C-Di AR oe Sta 0-7 _ _ BA 124...125, BB 119, 182790, 1SV50, + 1 1894(A....D) Sak C-Di VHF AFC, VHF Tuning 31a D0-7 BB 105G, BB 205G, BB 305G, BB 505G, ++ 1.$ 1895(A.....D) Sak C-0i VHF AFC, VHF Tuning oe 3la DO-7 ____BB 1056, BB 2056, BB 205G, BB 5056, ++ 1$ 1997 Sak Si-Di TV Damper-Di, 350/500V, 1,54, Ufet,1V(1,5A),<800ns 34 DO-1 BYD 33 M 3ia BY 258/500, BY 298, BYV 14, RGP 15d, ++ 18 1898 Si-Di =181897: 560/800V 34 DO-1 BYD 33 M 31a BY 258/800, BY 299, BYV 15, RGP 15K, ++ 181899 Si-Di_______-=181897: 400/1000V 34 DO-1 BYD 33M 31a __BY 246/1000, BY 299, BYV 16, RGP 15M, ++ Si-Di TV Damper-Di, 1500V, 1,5A, Ufc1,2V(1,5A), <1,5ys 22 10-66 BY 3590/1500. 17k BY359/1500, 181902 S-Di ___-FRr, SOQV, 0,8A, Uf<1,5V(1A), <300ns_ - 34 DO-1 _ BY 201/5, BYX 55/600, RGP 10J, 1N4946,++ 1 1903 Sak Si-Br , BA, Uf<0,9V(0,75A) B80C1500, etc. 181904 Sir =181908: 140V oo - 814001500, etc. 1S 1905 Sak Si-0i Dual, 100V, 1A, Uf<0,05V(0,5A) 13j (13x11x7) Dx(BY 126...127, BY 133...135, 1N4002,44) 181906 Si-Di =181905: 200V 12j (13x11x7) 2x(BY 126...127, BY 133...134, 1N4003,+4) 1 $1907 Si-Di =181905: 400V 12) (13x11x7) 2x(BY 126...127, BY 133...134, 1N4004,+4) 1S 1905R....1907R Si-Di =181905...1907 12h (13x14x7) 181905...1907 1S 1908 Sak Si-Di FRr, 100V, 1,54, Uf<1,5V(1,5A), <300ns (BY 205/100, BYV 87/300, ESM 181/300R, +)4 181909 Sibi __=181908: 20000 _ _ (BY 205/200, BYV 87/300, ESM 181/300R,+)4 181910 Sak ~ Si-Di Rr, 1040/1300V, 1A, Uf<1,5A(2A), <1ys 34b D0-1 BY 228, BY 231/1400, BY 400, BY 448 181911 . Si-Di =181910: 1200/1500V 34b DO-1 _ BY 228, BY 231/1500, BY 400, BY 448 181912. ~~ SiDi KV-Rr, 10kV, 3mA, Uf<12V(10mA), <300ns 3la (27x14x7) __ BY 509...510, BY 707...709 a 181914 Sak Si-Di Rr, 100V, 1,5A, Uf<0,93V(1,5A) 34a DO-1 BY 226...227, BY 251...256, 1N5392...99, ++ 181915 Si-Di =1$1914: 200V 34a D0-1 BY 226...227, BY 251...255, 1N5393...99, +4 181916 Si-Di =181914: 400V 34a DO-1 BY 226...227, BY 252...255, 1N5395...99, ++ 181917 Si-Di =181914: 600V 34a DO-1 BY 226...227, BY 253...255, 1N5397...99, +4 18 1918 Si-Di 2181914: 800V 34a p0-1 BY 227, BY 254...255, 1N5398...99, ++ 181919 Si-Di ___ 2181914: 1000V - 3da 00-1 BY 227, BY 255, BYX 87, 1N5399, ++ 78190 0tsiCSHMC (SD Rr, 1200V, 0,8A, Uf<1,3V(2A) 34 DO-1 BY 133, BY 227, BYX 95, GP 100, EM 513 181921 A Hit Si-Di Rr, 200V, 0,1A, Uf<2V(0,1A) 3la D0-27 BA 157...159, BA 147/230, BAY 88...91, +4 1 19218 Si-Di =181921A: 400V Sta DO-27 BA 157...159, BAY 88...91, BY 203/12, +4 181921 Si-Di =1$1921A: 600V 31a 00-27 BA 158...159, BAY 89...91, BY 203/12, +4 1$1921D Si-Di =181921A: 800V 31a D0-27 BA 159, BAY 90...91, BY 203/12, ++ 1S 1921E Si-Di =181921A; 1000V 3la 00-27 BA 159, BAY 90...91, BY 203/12, ++ 1S1921F SDL 1819214: 12000 3ia_s00-27 _BAY 91, BY 203/12, BY 584, RGP 01-12, ++ 1 1922 Nir CDi AFC, 15/15V, 3...8pF(4V), Q>100(100MHz} 31a D0-41 BA 124....125, BB 119, 1SV 114, 1SV125, ++ 1$ 1923 Nir CDi =181922: 6... 12pF(4V) 31a D0-41 BA 124...125, BB 119, 1SV114, 18V125, ++ 181924 Nir C-Di =1$1922: 9...18pF(4V) 31a D0-41 _ BA 124...125, BB 119, 1SV 114, 18V125, ++ 481925 Nir Si-Di____ Schottky, UHF Mx, BV, SOMA, F-9dB(890MIHiz) _ 3ta DO-7 . : 1S 1926, Nir Si-Di Schottky, UHF Mx, 5V, 25mA, F<11,5dB(890MHz) 3ta DO-7 BA 480...481, BAR 19, BAT 29 1$ 1927 Fid Si-Di P Rr, contr.av., 2000V, 7A(Te=120}, Uf<1,6V(20A} 32b DO-4 - 1$ 1928 Fid Si-Di P Rr, contray., 2000V, 12A(Te=120), Uf<1,6V(30A) 32b ~D0-5 - 18 1929 Fid Si-Di =11928: 3000V 32b =D0-5 - 1 1930 Fid Si-Di P Rr, contrav., 2000V, 24A(Tc=120), Uf<1 ,6V(60A) 32b =D0-5 - 181931 Fid Si-Di =181930: 3000V 32b =D0-5 - 18 1932 Fid i P Rr,contr.av., 2000V, SOA(To=120), Uf<t 6V(120A) 73b DO-30 - 1.81933 Fi =181932: 3000V 73b D0-30 : _ 18 1934 org P Rr, 100V, 20A(130), Utet,2V(60A} 32a DO-5 1N3765. ..3768, 1N4525...4530 18 1935 =181934: 200V 32a DO-5 1N3765...3768, 1N4525...4530 18 1936 Si-Di =1$1934: 400V 32a D0-5 1N3765...3768, 1N4526...4530 1$ 1937 Si-Di 2181934: 600V 32a D0-5 1N3765...3768, 1N4527..4530