DATA SH EET
Product specification
Supersedes data of 1997 Mar 12 1999 Apr 23
DISCRETE SEMICONDUCTORS
BC635; BC637; BC639
NPN medium power transistors
b
ook, halfpage
M3D186
1999 Apr 23 2
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
FEATURES
•High current (max. 1 A)
•Low voltage (max. 80 V).
APPLICATIONS
•Driver stages of audio/video amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC636, BC638 and BC640.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM259
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC635 −45 V
BC637 −60 V
BC639 −100 V
VCEO collector-emitter voltage open base
BC635 −45 V
BC637 −60 V
BC639 −80 V
VEBO emitter-base voltage open collector −5V
I
Ccollector current (DC) −1A
I
CM peak collector current −1.5 A
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤25 °C−0.83 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 23 3
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =30V −100 nA
IE= 0; VCB =30V; T
j= 150 °C−10 µA
IEBO emitter cut-off current IC= 0; VEB =5V −100 nA
hFE DC current gain VCE = 2 V; see Fig.2
IC= 5 mA 40 −
IC= 150 mA 63 250
IC= 500 mA 25 −
DC current gain IC= 150 mA; VCE = 2 V; see Fig.2
BC639-10 63 160
BC635-16; BC637-16; BC639-16 100 250
VCEsat collector-emitter saturation voltage IC= 500 mA; IB=50mA −500 mV
VBE base-emitter voltage IC= 500 mA; VCE =2V −1V
f
Ttransition frequency IC= 50 mA; VCE = 5 V; f = 100 MHz 100 −MHz
DC current gain ratio of the
complementary pairs IC= 150 mA; VCE=2V −1.6
hFE1
hFE2
-----------
1999 Apr 23 4
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
handbook, full pagewidth
0
160
80
120
40
MBH729
10−1
hFE
1IC (mA)
10 103
102
VCE = 2 V
Fig.2 DC current gain; typIcal values.
1999 Apr 23 5
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
1999 Apr 23 6
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 23 7
Philips Semiconductors Product specification
NPN medium power transistors BC635; BC637; BC639
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05812
