OP233W - TT Electronics - Product.Network

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A .2 01/09

Page 1 of 6

Hermetic Infrared Emitting Diode

OP230 Series

Description:

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic

metal TO-46 housing. The gallium aluminum arsenide feature provides a higher radiated output than gallium

arsenide at the same forward current.

Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between

half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while

the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy

design in beam interrupt applications in conjunction with the OP800 or OP598 series photosensors. The OP 231

series is mechanically and spectrally matched to OP8 00, OP593 and OP598 phototransistor s.

Each OP231W, OP232W, OP233W, OP234W and OP235W device is lensed to provide a wide beam angle (50°)

between half power points. The 890 nm wavelength closely matches the spectral response of silicon photo-

transistors, while the wide beam angle provides relatively even illumination over a large area. The OP231W is

mechanically and spe ctrally matched to the OP800WSL and OP830SL se ries devices.

Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.

Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for

more information.

Features:

• Focused and non-focused optical light pattern

• Enhanced temperature range

• TO-46 hermetically sealed package

• Mechanically and spectrally matched to other OPTEK devices

• Choice of power ranges

• Choice of narrow or wide irradiance pattern

Applications:

• Non-contact reflective object sensor

• Assembly line automation

• Machine automation

• Machine safety

• End of travel sensor

• Door sensor

“W”

Series

RoHS

Ordering Information

Part

Number

LED Peak

Wavelength

Output Power

(mW/cm2)

Min / Max

Total Beam

Angle

Lead

Length

0.50"

OP231

890 nm

1.5 / NA

18°

OP232 2.0 / 6.0

OP233 3.0 / NA

OP234 5.0 / NA

OP235 6.0 / NA

OP231W 1.5 / NA

50°

OP232W 3.5 / 7.0

OP233W 5.0 / NA

OP234W 5.0 / NA

OP235W 6.0 / NA

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A.2 01/09

Page 2 of 6

Hermetic Infrared Emitting Diode

OP230 Series

OP231, OP232, OP233, OP234, OP235

OP231W, OP232W, OP233W, OP234W, OP235W

INCHES

[MILLIMETERS]

DIMENSIONS ARE IN:

Pin # LED

1 Anode

2 Cathode

Cathode

Anode

INCHES

[MILLIMETERS]

DIMENSIONS ARE IN:

Cathode

Anode

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A .2 01/09

Page 3 of 6

Hermetic Infrared Emitting Diode

OP230 Series

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Storage Temperature Range -65o C to +150o C

Reverse Voltage 2.0 A

Continuous Forward Current 100 mA

Peak Forward Current 10.0 A

Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2)

Power Dissipation 200 mW(3)

Operating Temperature Range -65o C to +125o C

Notes:

1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

2. Derate linearly 2.0 mW/° C above 25° C.

3. Measurement made with 100 µs pulse measured at the trailing edge of the pulse with a duty cycle of 0.1% and an IF = 100 mA.

4. For the OP231 series, EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface,

a radius of 1.429” (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35

mm) in diameter forming a 10° cone. For the OP231W series, EE(APT) is a measurement of the average radiant intensity within the

Electrical Characteristics (TA = 25°C unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Input Diode

Apertured Radiant Incidence

OP231

OP232

OP233

OP234

OP235

1.5

2.0

3.0

5.0

6.0

mW/cm2

OP231 Series

IF = 100 mA(3 )(4)

Aperture = 0.250”

Distance = 1.429”

OP231W

OP232W

OP233W

OP234W

OP235W

1.5

3.5

5.0

6.0

7.0

mW/cm2

OP231W Series

IF = 100 mA(3 )(4)

Aperture = 0.250”

Distance = 0.466”

Radiant Power Output

OP231

OP232

OP233

6.0

8.0

10.0

mW IF = 100 mA(3 )(4)

VF Forward Voltage - - 2.0 V IF = 100 mA (3)

IR Reverse Current - - 100 µA VR= 2.0 V

λP

Wavelength at Peak Emission

OP231, OP232, OP233

OP234, OP235

890

850

IF = 10 mA

β Spectral Bandwidth between Half Power

Points - 80 - nm IF = 10 mA

∆λP /∆T Spectral Shift with Temperature - +0.30 - nm/°C IF = Constant

θHP

Emission Angle at Half Power Points

OP231 - OP235

OP231W - OP231W

Degree

IF = 100 mA

tr Output Rise Time - 500 - ns IF(PK)=100 mA, PW=10 µs, and

D.C.=10.0%

tf Output Fall Time - 250 - ns

EE(APT)

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A.2 01/09

Page 4 of 6

Hermetic Infrared Emitting Diode

OP230 Series

OP231, OP232, OP233 (including “W” devi ces)

Forward Voltage vs Forward Current vs

Temperature

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

0 102030405060708090100

Forward Current (mA)

Typica l Forward Volta ge (V)

-60° C

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

100° C

120°C

Optical Power vs I

vs Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 102030405060708090100

Forward Current I

(mA)

Normalized Optical Power

-60° C

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

100° C

120° C

Normalized at 50 mA and 20° C

Relative Radiant Intensity vs. Angular

Displacement

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

-20 -15 -10 -5 0 5 10 15 20

Angular Displacement (Degrees)

Relative Radiant Intensity

Distan c e vs Ou tp u t Po we r vs Fo rward Curre nt

0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''

Distance (i n ch e s)

Normalized Output Power

10 mA

20 mA

30 mA

40 mA

50 mA

60 mA

70 mA

80 mA

90 mA

100 mA

Normaliz ed at 1" and 50 m

Forward Current

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A .2 01/09

Page 5 of 6

Hermetic Infrared Emitting Diode

OP230 Series

Distance vs Output Power vs Forward Current

0.01

0.10

1.00

10.00

0.2 '' 0.7 '' 1.2 '' 1.7 ''

Distance (inches)

Normalized Output Powe r

10 mA

20 mA

30 mA

40 mA

50 mA

60 mA

80 mA

100 mA

120 mA

Normaliz ed at 1.0" and 50 mA

Forward Current

Relative Radiant Intensity vs Angular

Displacement

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-80 -30 20 70

Angular Displacement (Degrees)

Re lative R a d ian t Inten sity

Forward Voltage vs Forward Current vs

Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0 5 10 15 20 25 30 35 40 45 50

Forward Current (mA)

Typical Forward Voltage (V)

-60° C

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

100° C

120° C

Optical Power vs Forward Current vs

Temperature

0.0

0.5

1.0

1.5

2.0

2.5

0 102030405060708090100

Fo rwa rd Current I

(mA)

Relative Output Power

-60° C

-40° C

-20° C

0° C

20° C

40° C

60° C

80° C

100° C

120° C

Normalized at 50 mA and 20°C

OP234, OP234W

OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.

OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com

Issue A.2 01/09

Page 6 of 6

Hermetic Infrared Emitting Diode

OP230 Series

Forward Voltage vs Forwa rd Current vs

Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0 5 10 15 20 25 30 35 40 45 50

Forward Cur r ent ( m A)

Typical Forwa rd Volt age (V)

-60°C

-40°C

-20°C

0°C

20°C

40°C

60°C

80°C

100°C

120°C

Optical Power vs Forward Current vs

Temperature

0.0

0.5

1.0

1.5

2.0

2.5

0 102030405060708090100

Forward Current I

(mA)

Relative Output Power

-60°C

-40°C

-20°C

0°C

20°C

40°C

60°C

80°C

100°C

120°C

Normali z ed at 50 mA and 20° C

Distance vs Output Powe r vs Forward Current

0.2 '' 0.4 '' 0.6 '' 0.8 '' 1 .0 '' 1.2 '' 1 .4 '' 1.6 '' 1.8 '' 2.0 ''

Distan ce ( in ches )

Normalized Output Power

10 mA

20 mA

30 mA

40 mA

50 mA

60 mA

80 mA

100 mA

120 mA

Norma liz ed at 1.0" and 50 mA

Forward Current

OP235, OP235W