34.807IRELESS
IMPORTANT NOTICE
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As a result, the following changes are applicable to the attached document.
●Company name - Philips Semiconductors is replaced with ST-NXP Wireless.
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34.807IRELESS
www.stnwireless.com
DATA SH EET
Product specification
Supersedes data of 1996 Jan 09
File under Integrated Circuits, IC01
1999 Aug 26
INTEGRATED CIRCUITS
TEA5757; TEA5759
Self Tuned Radio (STR)
1999 Aug 26 2
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
FEATURES
•The tuning system has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio
•Thetuningqualityissuperior and requires no IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances
•In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible
•Thelocal(internal)controllerfunction facilitatesreduced
and simplified microcontroller software
•The high integration level (radio and tuning synthesizer
on one chip) means fewer external components with
regard to the communication between the radio and the
microcontroller (90% less components compared to the
digital tuning application of a radio IC with external PLL
tuning function) and a simple and small printed-circuit
board
•Therewill benoapplication considerationsforthe tuning
system, with regards to quality and high integration
level, since there will be no external 110 MHz buffers,
loop filter or false lock elimination
•The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), which mimics hand tuning, yields a
potentially fast yet reliable tuning operation
•The level of the incoming signal at which the radio must
lock is software programmable
•Two programmable ports
•High selectivity with distributed IF gain
•Soft mute
•Signal dependent stereo-blend
•High impedance MOSFET input on AM
•Wide supply voltage range of 2.5 to 12 V
•Low current consumption 18 mA at AM and FM
(including tuning synthesizer)
•High input sensitivity
•Low output distortion
•Due to the new tuning concept, the tuning is
independent of the channel spacing.
GENERAL DESCRIPTION
The TEA5757; TEA5759 is a 44-pin integrated AM/FM
stereo radio circuit including a novel tuning concept.
The radio part is based on the TEA5712.
The TEA5757 is used in FM-standards in which the local
oscillator frequency is above the radio frequency
(e.g. European and American standards).
The TEA5759 is the version in which the oscillator
frequency is below the radio frequency
(e.g. Japanese standard).
Thenew tuning concept combinestheadvantagesof hand
tuning with electronic facilities and features. User
‘intelligence’ is incorporated into the tuning algorithm and
animprovementof theanalogsignalprocessingisusedfor
the AFC function.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TEA5757H QFP44 plastic quad flat package; 44 leads (lead length 1.3 mm); body
10 ×10 ×1.75 mm SOT307-2
TEA5759H
1999 Aug 26 3
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
QUICK REFERENCE DATA
Notes
1. VCC1 =3V;V
CC2 =12V;V
DDD =3V;f
i= 1 MHz;m = 0.3; fm= 1 kHz; measured in Fig.9 with S1 in position A and S2
in position B; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9).
2. VCC1 =3V; V
CC2 = 12 V; VDDD =3V; f
i= 100 MHz; ∆fm= 22.5 kHz; fm= 1 kHz; measured in Fig.9 with S2, S3
and S5 in position A; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9).
3. VCC1 =3V; V
CC2 = 12 V; VDDD =3V; V
i3(L + R) = 155 mV; Vpilot = 15.5 mV; fi= 1 kHz; measured in Fig.9 with S2
and S3 in position B.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC1 supply voltage 2.5 −12 V
VCC2 supply voltage for tuning −−12 V
Vtune tuning voltage 0.7 −VCC2 −0.75 V
ICC1 supply current AM mode 12 15 18 mA
FM mode 13 16 19 mA
IDD supply current AM mode −3.3 −mA
FM mode −2.7 −mA
ICC2 supply current for tuning in preset
mode (band-end to band-end) −−800 µA
Tamb ambient temperature −15 −+60 °C
AM performance; note 1
V10 AF output voltage Vi1 =5mV 364570 mV
V
i1 RF sensitivity input voltage (S+N)/N = 26 dB 40 55 70 µV
THD total harmonic distortion Vi1 =1mV −0.8 2.0 %
FM performance; note 2
V10 AF output voltage Vi5 =1mV 404857 mV
V
i5 RF limiting sensitivity V10 at −3 dB;
V10 is 0 dB at Vi5 =1mV 0.4 1.2 3.8 µV
THD total harmonic distortion IF filter
SFE10.7MS3A20K-A −0.3 0.8 %
MPX performance; note 3
αcs channel separation 26 30 −dB
1999 Aug 26 4
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
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BLOCK DIAGRAM
handbook, full pagewidth
PRESCALER
PROGRAMMABLE
COUNTER
STABILIZER
WINDOW
DETECTOR
LAST-STATION
MEMORY
AM/FM
INDICATOR
IN-LOCK
DETECTOR
FM
DETECTOR PILOT
DETECTOR
CHARGE
PUMP
MULTIPLEXER
CRYSTAL
OSCILLATOR
SHIFT REGISTER
FM
FRONT-END FM
OSCILLATOR FM
IF2
FM
IF1
FM
MIXER
SEQUENTIAL
CIRCUIT
STATUS
REGISTER
AM
FRONT-END AM
OSCILLATOR AM
DETECTOR V/I
CONVERTER
AM
MIXER AM
IF AGC
AFC
hard mute level
PLL
DECODER
MATRIX
SDS MUTE
up
down
level
RFGND
DATA
BUS-CLOCK
WRITE-ENABLE
FM-RFI
VSTAB(A)
VSTAB(B)
AM-RFI
XTAL
RIPPLE
25
23
1
26
30
31
2
AGC
AM-IFI/O2
AM-MIXERAMOSC AM-IFI1
640 41 36 44 822
32
20
19
13
15
14
9
12
24
16
181739 37 333535
38
43
42
28
27
29
34
7
21
10 11 4
MO/ST
AFRO
MUTE
AFC(n)
AFC(p)
AFC
VCO
LFI
PILFIL
AFLO
stereo
stereo
mono
38 kHz
19 kHz
FM-IFI1 FM-IFI2
FM-IFO1
FM-MIXER
FMOSC
FM-RFO
VCC1
VDDD
TEA5757;
TEA5759
FM
AM
DGND
P1
P0
TUNE RFGND
MPXI
AFO
VCC2
IFGND FSIFMDEM
MHA111
Fig.1 Block diagram.
1999 Aug 26 5
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
PINNING
SYMBOL PIN DESCRIPTION
RIPPLE 1 ripple capacitor input
AM-RFI 2 AMRF input
FM-RFO 3 parallel tuned FMRF circuit to ground
RFGND 4 RF ground and substrate
FMOSC 5 parallel tuned FM-oscillator circuit to ground
AMOSC 6 parallel tuned AM-oscillator circuit to ground
VCC1 7 supply voltage
TUNE 8 tuning current output
VCO 9 voltage controlled oscillator input
AFO 10 AM/FM AF output (output impedance typical 5 kΩ)
MPXI 11 stereo decoder input (input impedance typical 150 kΩ)
LFI 12 loop-filter input
MUTE 13 mute input
AFLO 14 left channel output (output impedance typical 4.3 kΩ)
AFRO 15 right channel output (output impedance typical 4.3 kΩ)
PILFIL 16 pilot detector filter input
IFGND 17 ground of IF, detector and MPX stage
FMDEM 18 ceramic discriminator input
AFC(n) 19 AFC negative output
AFC(p) 20 AFC positive output
FSI 21 field-strength indicator
VCC2 22 supply voltage for tuning
VDDD 23 digital supply voltage
MO/ST 24 mono/stereo and tuning indication output
XTAL 25 crystal input
DGND 26 digital ground
BUS-CLOCK 27 bus-clock input
DATA 28 bus data input/output
WRITE-ENABLE 29 bus write-enable input
P0 30 programmable output port (P0)
P1 31 programmable output port (P1)
AFC 32 450 kHz LC-circuit
FM-IFI2 33 FMIF input 2 (input impedance typical 330 Ω)
VSTAB(B) 34 internal stabilized supply voltage (B)
FM-IFO1 35 FMIF output 1 (output impedance typical 330 Ω)
AM-IFI/O2 36 input/output to IF-Tank (IFT); output: current source
FM-IFI1 37 FMIF input 1 (input impedance typical 330 Ω)
VSTAB(A) 38 internal stabilized supply voltage (A)
FM-MIXER 39 ceramic filter output (output impedance typical 330 Ω)
AM-MIXER 40 open-collector output to IFT
1999 Aug 26 6
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
AM-IFI1 41 IFT or ceramic filter input (input impedance typical 3 kΩ)
RFGND 42 FMRF ground
FM-RFI 43 FMRF aerial input (input impedance typical 40 Ω)
AGC 44 AGC capacitor input
SYMBOL PIN DESCRIPTION
Fig.2 Pin configuration.
handbook, full pagewidth
TEA5757H
TEA5759H
MHA112
1
2
3
4
5
6
7
8
9
10
11
33
32
31
30
29
28
27
26
25
24
23
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
RIPPLE
AM-RFI
FM-RFO
RFGND
FMOSC
AMOSC
VCC1
TUNE
VCO
AFO
MPXI
FM-IFI2
AFC
P1
P0
WRITE-ENABLE
DATA
BUS-CLOCK
DGND
XTAL
MO/ST
VDDD
LFI
MUTE
AFLO
AFRO
PILFIL
IFGND
FMDEM
AFC(n)
AFC(p)
FSI
VCC2
AGC
FM-RFI
RFGND
AM-IFI1
AM-MIXER
FM-MIXER
VSTAB(A)
FM-IFI1
AM-IFI/O2
FM-IFO1
VSTAB(B)
1999 Aug 26 7
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
FUNCTIONAL DESCRIPTION
The TEA5757; TEA5759 is an integrated AM/FM stereo
radio circuit including digital tuning and control functions.
The radio
The AM circuit incorporates a double balanced mixer,
a one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.
The AM input is designed to be connected to the top of
a tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the
AM front-end.
The first AM selectivity can be an IF-Tank (IFT) as well as
an IFT combined with a ceramic filter; the second one is
an IFT.
The FM circuit incorporates a tuned RF stage, a double
balanced mixer, a one-pin oscillator and is designed for
distributed IF ceramic filters. The FM quadrature detector
uses a ceramic resonator (or LC).
The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.
Tuning
The tuning concept of the Self Tuned Radio (STR) is
based on FUZZY LOGIC: it mimics hand tuning (hand
tuning is a combination of coarse and fine tuning to the
qualitatively best frequency position). As a consequence
the tuning system is very fast.
The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.
The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:
•Preset operation
•Search operation.
PRESET OPERATION
Inpresetmode, the microcontroller has to load information
suchasfrequencyband,frequencyandmono/stereo.This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:
1. The information is loaded into the shift register, the
last-station memory and the counter.
2. The Automatic Frequency Control (AFC) is
switched off.
3. The counter starts counting the frequency and the
tuning voltage is varied until the desired frequency
roughly equals the real frequency.
4. The AFC is then switched on and the counter is
switched off.
5. The real frequency is more precisely tuned to the
desired frequency.
After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).
In the event of fading or pulling the in-lock signal becomes
logic 0 and the synthesizer will be switched on again and
the algorithm will be repeated.
SEARCH OPERATION
During a search operation, the only action the
microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
thefound station willbecountedby the counterandwritten
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller.
The microcontroller decides whether the frequency is
withinthedesiredfrequency band.If so,this frequencycan
be stored under a preset and if not, a new search action
should be started.
To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:
•Store the current frequency in the memory
•Issue the search command
•Wait for data valid and read the new frequency
•If the new frequency is the same as the stored
frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.
1999 Aug 26 8
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
Description of the bus
The TEA5757; TEA5759 radio has a bus which consists of
three wires, as shown in Table 1.
Table 1 Bus signals
These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.
Table 2 Bus-clock functions
The TEA5757; TEA5759 has a 25-bit shift register;
see Table 3 for an explanation of the shift register bits.
If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.
The bus protocol is depicted in Figs 3 and 4.
SIGNAL DESCRIPTION PIN
BUS-CLOCK software driven clock input 27
DATA data input/output 28
WRITE-ENABLE write/read input 29
BUS-CLOCK MO/ST (PIN 24) RESULT
LOW LOW stereo
LOW HIGH mono
HIGH LOW tuned
HIGH HIGH not tuned
Table 3 Explanation of the shift register bits
Note
1. The output pins 30 and 31 can drive currents up to 5 mA; bits P0.19 and P1.18 control the output voltage of the
control pins P0 (pin 30) and P1 (pin 31):
a) Bit P0.19 LOW sets P0 (pin 30) to LOW.
b) Bit P0.19 HIGH sets P0 (pin 30) to HIGH.
c) Bit P1.18 LOW sets P1 (pin 31) to LOW.
d) Bit P1.18 HIGH sets P1 (pin 31) to HIGH.
BIT DESCRIPTION LOGIC
STATE RESULT
S.24 (MSB) search start/end 0 after a search when a station is found or after a preset
1 during the search action
D.23 search up/down 0 indicates if the radio has to search down
1 indicates if the radio has to search up
M.22 mono/stereo 0 stereo is allowed
1 mono is required (radio switched to forced mono)
B0.21 band see Table 4 selects FM/MW/LW/SW band
B1.20
P0.19 port note 1 user programmable bits which e.g. can be used as band
switch driver
P1.18
S0.17 search-level of station see Table 5 determines the locking field strength during an
automatic search, automatic store or manual search
S1.16
15 dummy −buffer
F.14 to F.0 (LSB) frequency −determine the tuning frequency of the radio; see Table 6
for the bit values
1999 Aug 26 9
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
Table 4 Truth table for bits B0.21 and B1.20
Table 5 Truth table for bits S1.16 and S0.17
Table 6 Values for bits F.14 to F.0
Notes
1. FM value of the affected oscillators:
a) FM VALUE = FMRF + FMIF (for TEA5757).
b) FM VALUE = FMRF −FMIF (for TEA5759).
2. AM value of the affected oscillators:
AM VALUE = AMRF + AMIF.
B0.21 B1.20 BAND SELECT
00FM
01MW
10LW
11SW
S1.16 S0.17 SIGNAL RECEPTION
FM
(µV) AM
(µV)
0 0 >5 >28
0 1 >10 >40
1 0 >30 >63
1 1 >150 >1000
BIT BIT VALUE FM
VALUE(1)
(kHz)
AM
VALUE(2)
(kHz)
F.14 214 −16384
F.13 213 102400 8192
F.12 212 51200 4096
F.11 211 25600 2048
F.10 210 12800 1024
F.9 296400 512
F.8 283200 256
F.7 271600 128
F.6 26800 64
F.5 25400 32
F.4 24200 16
F.3 23100 8
F.2 2250 4
F.1 2125 2
F.0 2012.5 1
1999 Aug 26 10
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
READING DATA
While WRITE-ENABLE is LOW data can be read by the
microcontroller. At a rising edge of the BUS-CLOCK, data
is shifted out of the register. This data is available from the
point where the BUS-CLOCK is HIGH until the next rising
edge of the BUS-CLOCK occurs (see Fig.3).
To read the entire shift register 24 clock pulses are
necessary.
WRITING DATA
While WRITE-ENABLE is HIGH the microcontroller can
transmit data to the TEA5757; TEA5759 (hard mute is
active). At a rising edge of the BUS-CLOCK, the register
shifts and accepts one bit into LSB. At clock LOW the
microcontroller writes data (see Fig.4).
To write the entire shift register 25 clock pulses are
necessary.
Fig.3 Read data.
handbook, full pagewidth
WRITE-ENABLE
BUS-CLOCK
DATA
data read
data available
data shiftdata available after search ready
MSB is LOW
MBE817
Fig.4 Write data.
handbook, full pagewidth
data changedata shift
MBE818
WRITE-ENABLE
BUS-CLOCK
DATA
1999 Aug 26 11
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
BUS TIMING
handbook, full pagewidth
tHIGH tLOW
tda
VIH
VIL
MBE819
WRITE-ENABLE
BUS-CLOCK
DATA
Fig.5 Bus timing.
Table 7 Digital inputs
SYMBOL PARAMETER MIN. MAX. UNIT
Digital inputs
VIH HIGH-level input voltage 1.4 −V
VIL LOW-level input voltage −0.6 V
Timing
fclk clock input frequency −300 kHz
tHIGH clock HIGH time 1.67 −µs
t
LOW clock LOW time 1.67 −µs
t
da shift register available after ‘search ready’ −14 µs
1999 Aug 26 12
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC1 supply voltage 0 13.2 V
Ptot total power dissipation Tamb =70°C−250 mW
Tstg storage temperature −65 +150 °C
Tamb ambient temperature −15 +60 °C
Tjjunction temperature −15 +150 °C
Ves electrostatic handling voltage for all pins note 1 −±200 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air 65 K/W
1999 Aug 26 13
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
CHARACTERISTICS
VCC1 =3V; T
amb =25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC1 supply voltage 2.5 −12 V
VCC2 supply voltage for tuning −−12 V
VDDD supply voltage for digital part 2.5 −12 V
Vtune tuning voltage 0.7 −VCC2 −0.75 V
ICC2 supply current for tuning in
preset mode (band-end to
band-end)
−−800 µA
fBUS-CLOCK(max) maximum BUS-CLOCK
frequency −−300 kHz
ICC1 current consumption during
acquisition of VCC1
AM mode 12 15 18 mA
FM mode 12.5 15.5 18.5 mA
IDD current consumption during
acquisition of IDD
AM mode −4.8 −mA
FM mode −5.5 −mA
ICC1 current consumption after
acquisition of VCC1
AM mode 12 15 18 mA
FM mode 13 16 19 mA
IDD current consumption after
acquisition of IDD
AM mode −3.3 −mA
FM mode −2.7 −mA
tsearch synthesizer auto-search time for
empty band FM mode −−10 s
tacq synthesizer preset acquisition
time between two band limits FM −100 −ms
MW −100 −ms
LW −200 −ms
SW −500 −ms
fband frequency band range of the
synthesizer AM mode 0.144 −30 MHz
FM mode 50 −150 MHz
∆fFM AFC inaccuracy of FM −−1 kHz
∆fAM AFC inaccuracy of AM −−100 Hz
IP0(sink) sink current of software
programmable output P0 V30 =3V 4 6 −mA
IP1(sink) sink current of software
programmable output P1 V31 =3V 4 6 −mA
IP0(source) source current of software
programmable output P0 V30 =0V 5 9 −mA
IP1(source) source current of software
programmable output P1 V31 =0V 5 9 −mA
1999 Aug 26 14
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
AM CHARACTERISTICS
Input frequency fi= 1 MHz; m = 0.3; fm= 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9); unless otherwise specified.
FM CHARACTERISTICS
Input frequency fi= 100 MHz; ∆f = 22.5 kHz; fm= 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9); unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V10 AF output voltage Vi1 =5mV 364570mV
V
i1 RF sensitivity input voltage (S+N)/N = 26 dB 40 55 70 µV
Vi1 large signal voltage handling capacity m = 0.8; THD ≤8% 150 300 −mV
PSRR power supply ripple rejection ∆V7= 100 mV (RMS);
100 Hz; V7= 3.0 V −−47 −dB
Iiinput current (pin 2) V44 = 0.2 V −0−µA
C
iinput capacitance (pin 2) V44 = 0.2 V −−4pF
G
cfront-end conversion gain V44 = 0.2 V 5 10 14 dB
V44 = 0.9 V −26 −14 0 dB
(S+N)/N signal plus noise-to-noise ratio −50 −dB
THD total harmonic distortion Vi1 =1mV −0.8 2.0 %
α450 IF suppression V10 =30mV −56 −dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V10 AF output voltage Vi5 =1mV 404857mV
V
i5 RF sensitivity input voltage (S+N)/N = 26 dB 1 2 3.8 µV
Vi5 RF limiting sensitivity V10 at −3 dB;
V10 is 0 dB at Vi5 =1mV 0.4 1.2 3.8 µV
Vi5 large signal voltage handling capacity THD < 5% −500 −mV
PSRR power supply ripple rejection ∆V7= 100 mV (RMS);
100 Hz; V7= 3.0 V −44 −−dB
Gcfront-end conversion gain 12 18 22 dB
(S+N)/N signal plus noise-to-noise ratio Vi5 =1mV −62 −dB
THD total harmonic distortion IF filter
SFE10.7MS3A20K-A −0.3 0.8 %
V10
∆V7
----------
V
10
∆V7
----------
V
37
Vi5
---------
1999 Aug 26 15
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
STEREO DECODER CHARACTERISTICS
Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF signal of 100 mV to front-end to set radio to
maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.
TUNING CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V14/15 AF output voltage −160 −mV
Vpilot(s) switch to stereo −812mV
V
pilot(m) switch to mono 2 5 −mV
VAF-L/Vi3 MPX voltage gain −1.5 −+1.5 dB
(S+N)/N signal plus noise-to-noise ratio Vpilot = 15.5 mV (stereo) −74 −dB
THD total harmonic distortion −0.5 1.0 %
αcs channel separation 26 30 −dB
α19 carrier and harmonic suppression 19 kHz (200 mV) = 0 dB 27 32 −dB
α38 38 kHz 16 21 −dB
αstereo-blend Vi5 = 200 µV2230−dB
Vi5 =20µV−12dB
mute(s) soft mute depth Vi5 =3µV; V14 =V
15 −10 −dB
Vi5 =1µV; V14 =V
15 −−6−10 dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFM FM voltage levels α−3dB
-point at Vi5 =2µV
high (auto-store/search) S0 = 1; S1 = 1 60 150 500 µV
medium (auto-store/search) S0 = 0; S1 = 1 10 30 55 µV
low (auto-store/search) S0 = 1; S1 = 0 4 10 20 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 3 5 9 µV
VAM AM voltage levels α−3dB
-point at Vi5 =2µV
high (auto-store/search) S0 = 1; S1 = 1 400 1000 2500 µV
medium (auto-store/search) S0 = 0; S1 = 1 50 63 80 µV
low (auto-store/search) S0 = 1; S1 = 0 32 40 50 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 25 28 40 µV
VAFC(off) AFC voltage off mode α−3dB
-point at Vi5 =2µV
FM mode −3−µV
AM mode −25 −µV
mute(h) hard mute depth WRITE-ENABLE = HIGH −60 −dB
1999 Aug 26 16
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
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Fig.6 AM mode.
(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.
handbook, full pagewidth
10−710−610−510−410−310−210−11
(3)
(2)
(1)
0
1
2
3
4
5
6
7
8
9
120100806040200−20
THD
(%)
Vi1 (V)
(dBµV)
10
0
−10
−20
−30
−40
−50
−60
−70
−80
(dB)
MBE853
1999 Aug 26 17
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
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Fig.7 FM mode.
(1) Mono signal.
(2) Noise in mono mode.
(3) Left channel with modulation left.
(4) Right channel with modulation left.
(5) Noise in stereo mode.
(6) Harmonic distortion (measured with ∆f = 75 kHz).
handbook, full pagewidth
10
−7
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
10
1
2
3
4
5
6
7
8
9
12010080604020−20 0
THD
(%)
Vi5 (V)
(dBµV)
10
0
(1)
(2)
(3)
(4)
(5)
(6)
−10
−20
−30
−40
−50
−60
−70
−80
(dB)
MHA115
1999 Aug 26 18
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
INTERNAL CIRCUITRY
Table 8 Equivalent pin circuits and pin voltages
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
1 RIPPLE 2.1 2.1
2 AM-RFI 0 0
3 FM-RFO 0 0
4 RFGND 0 0
5 FMOSC 0 0
70 pF
17
1
7
1 kΩ
3 kΩ
MBE821
4
2
MBE822
3
42
43
220 Ω
MHA105
5
4
MBE823
1999 Aug 26 19
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
6 AMOSC 0 0
7V
CC1 3.0 3.0
8 TUNE −−
9 VCO 1.3 0.95
10 AFO 0.6 0.7
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
6
4
MBE824
22
26
8
MBE825
1 kΩ
10 kΩ
9
17
MBE826
5 kΩ
10
17
MBE827
1999 Aug 26 20
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
11 MPXI 1.23 1.23
12 LFI 0.1 0.8
13 MUTE 0.7 0.7
14 AFLO 0.65 0.65
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
9.5 kΩ
150 kΩ150 kΩ
11
17
MBE828
4 kΩ
13 kΩ
12
17
MBE829
7 kΩ50 kΩ
13
17
MBE830
5 kΩ
14
17
MBE831
1999 Aug 26 21
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
15 AFRO 0.65 0.65
16 PILFIL 0.95 0.95
17 IFGND 0 0
18 FMDEM −1.0
19 AFC(n) −−
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
5 kΩ
15
17
MBE832
10 kΩ10 kΩ
16
17
MBE833
180 Ω
910 Ω
18
17
MBE834
10 kΩ10 kΩ
19
MHA106
1999 Aug 26 22
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
20 AFC(p) −−
21 FSI −−
22 VCC2 −−
23 VDDD 3.0 3.0
24 MO/ST −−
25 XTAL −−
26 DGND 0 0
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
10 kΩ10 kΩ
20
MHA107
40 kΩ
12 to 34 kΩ
(dependent on
bits 16 and 17)
21
26
1.4 V
MBE836
24
26
100 Ω
MBE837
50 kΩ50 kΩ50 kΩ
25
26
MBE838
1999 Aug 26 23
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
27 BUS-CLOCK −−
28 DATA −−
29 WRITE-ENABLE −−
30 P0 −−
31 P1 −−
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
27
26
MBE839
28
29
26
MBE840
100 Ω
50 kΩ
100 kΩ
MHA108
30
23
20 kΩ
100 kΩ
120 Ω
26
MHA109
31
23
20 kΩ
100 kΩ
120 Ω
26
1999 Aug 26 24
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
32 AFC −−
33 FM-IFI2 −0.73
34 VSTAB(B) 1.4 1.4
35 FM-IFO1 −0.69
36 AM-IFI/O2 1.4 1.4
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
MBE842
32
34
20 kΩ
MBE843
33
17
34
2.2 kΩ
140 Ω
6 pF
MBE844
1
34
7
1 kΩ
MBE845
34
35 560 Ω
MBE846
36
17
34
3.6 kΩ3.6 kΩ
1999 Aug 26 25
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
37 FM-IFI1 −0.73
38 VSTAB(A) 1.4 1.4
39 FM-MIXER −1.0
40 AM-MIXER 1.4 1.4
41 AM-IFI1 1.4 1.4
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
MBE847
37
17
38
1.9 kΩ
140 Ω
6 pF
MBE848
1
38
7
1 kΩ
30 pF
39
680 Ω
MHA110
MBE850
40
38
MBE851
41
17
38
7.5 kΩ
3 kΩ
7.5 kΩ
1999 Aug 26 26
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
42 RFGND 0 0
43 FM-RFI −0.73
44 AGC 0.1 0.7
PIN
NO. PIN
SYMBOL
DC VOLTAGE
(V) EQUIVALENT CIRCUIT
AM FM
3
42
43
220 Ω
MHA105
MBE852
17
44
1 kΩ
1 kΩ1 kΩ
1999 Aug 26 27
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
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TEST AND APPLICATION INFORMATION
handbook, full pagewidth
100
µF
220
nF
4.7 nF
10
pF
22 pF
100
nF
VSTAB(A)
VSTAB(B)
GND
P1
P0
TUNE
10 Ω
18 kΩ
47 kΩ
47 kΩ
75 kHz
25
(13)
(14)
(14)
23
1
26
31
30
2
VSTAB(A)
VSTAB(A)
VSTAB(B) VCC2
L1
18 pF
18 pF
470 pF
BB112
TUNE
TUNE
470 nF
10 nF
10
µF
4.7 µF
L4
L2
6404136
44 822
32
20
19
13
15
14
9
12
24
16
1817
3335
373953
43
TUNE
BB804 BB804
29
38
34
27
28
42
7
21
10 11 4
VSTAB(B)
L5
68 kΩ
2.2 kΩ
10 kΩ
50 kΩ
470 nF
470 nF
100 nF
100 nF
12 nF
12 nF
VCC1
MO/ST
left output
right output
K3
100 nF
2.2 µF
VCC1
DATA
BUS-CLOCK
WRITE-ENABLE
VSTAB(B)
K2
L3
470 nF
330 pF
220 nF
18 pF
BB112
22 nF
TEA5757;
TEA5759
MHA113
(4)
K1(3)
(5)
(7)
(11)
(10)
(8)
L6(6)
L7(2)
(9)
10
pF
18 kΩ
TUNE L8(1)
(12)
(12)
Fig.8 Application diagram.
(1) L8 = MC117 E523FN-2000242, 38 pF ±3%,
TOKO.
(2) L7 = MC117 E523FN-2000242, 38 pF ±3%,
TOKO.
(3) K1 = SFE10.7MS3, MURATA.
(4) K2 = SFE10.7MS3, MURATA.
(5) K3 = CDA10.7-MG40-A, MURATA.
(6) L6 = 60 nH.
(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(8) L1 = 250 µH ferroceptor.
(9) L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80, TOKO.
(10) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.
(11) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(12) De-emphasis time constant is 50 µs: Cde-emp = 12 nF.
De-emphasis time constant is 75 µs: Cde-emp = 18 nF.
(13) Standard applications: ±30 ppm at 25 °C.
Short wave applications: ±20 ppm at 25 °C.
(14) Alternatively BB512, Siemens or KV1561A, TOKO.
1999 Aug 26 28
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
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handbook, full pagewidth
100
µF
220
nF
220
nF
1 nF
100
nF
VSTAB(A)
VSTAB(B)
GND
P1
P0
10 Ω
47 kΩ
75 kHz
25
23
1
26
31
30
2
VSTAB(B) VCC2
18 pF
18 pF
470 pF
BB112
TUNE
TUNE
470 nF
10 nF
10
µF
L4
L2
640 41 36 44 822
32
20
19
13
15
14
9
12
24
16
1817
3335
3739
S5
B
A
53
43
BB804
29
38
34
27
28
42
7
21
10 11 4
VSTAB(B)
L5
K3
100 nF
VCC1
DATA
BUS-CLOCK
WRITE-ENABLE
VSTAB(B)
VSTAB(A) K2
470 nF
TEA5757;
TEA5759
MHA114
(4)
K1(3)
(5)
(11)
(11)
(7)
(10)
(8)
680 pF
50 Ω43 Ω
6.8 Ω
(6)
(12)
1 MHz
Vi1 L1
50 Ω
3
kΩ
50 Ω
50 Ω
5 kΩ
(9)
(13)
VSTAB(A) Vi2
Vi3
450 kHz MPX
330 pF
220 nF
S3
S2
A
A
B
B
A
S1
B
L3
4.7 µF
68 kΩ
8.2 kΩ
2.2 kΩ
10 kΩ
50 kΩ
470 nF
470 nF
100 nF
100 nF
12
nF
12
nF
VCC1
MO/ST
left
output
right
output
2.2 µF
BA
S4
50 Ω
50 Ω
330 Ω
10.7
MHz 1 nF
Vi4
50 Ω27 Ω
91 Ω
560 Ω
100 MHz
Vi5
10
pF
18 kΩ
TUNE L7(2)
BB804
10
pF
18 kΩ
TUNE L8(1)
Fig.9 Test circuit.
(1) L8 = MC117 E523FN-2000242, 38 pF ±3%,
TOKO.
(2) L7 = MC117 E523FN-2000242, 38 pF ±3%,
TOKO.
(3) K1 = SFE10.7MS3, MURATA.
(4) K2 = SFE10.7MS3, MURATA.
(5) K3 = CDA10.7-MG40-A, MURATA.
(6) L1 = 22281−30091.
(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(8) L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80, TOKO.
(9) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.
(10) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(11) De-emphasis time constant is 50 µs: Cde-emp =12nF.
De-emphasis time constant is 75 µs: Cde-emp =18nF.
(12) Standard applications: ±30 ppm at 25 °C.
Short wave applications: ±20 ppm at 25 °C.
(13) Alternatively BB512, Siemens or KV1561A, TOKO.
1999 Aug 26 29
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
PACKAGE OUTLINE
UNIT A1A2A3bpcE
(1) eH
E
LL
pZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.25
0.05 1.85
1.65 0.25 0.40
0.20 0.25
0.14 10.1
9.9 0.8 1.3
12.9
12.3 1.2
0.8 10
0
o
o
0.15 0.10.15
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.95
0.55
SOT307-2 95-02-04
97-08-01
D(1) (1)(1)
10.1
9.9
HD
12.9
12.3
E
Z
1.2
0.8
D
e
E
B
11
c
E
H
D
ZD
A
ZE
e
vMA
X
1
44
34 33 23 22
12
y
θ
A1
A
Lp
detail X
L
(A )
3
A2
pin 1 index
D
HvMB
bp
bp
wM
wM
0 2.5 5 mm
scale
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm SOT307-2
A
max.
2.10
1999 Aug 26 30
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
SOLDERING
Introduction to soldering surface mount packages
Thistext givesavery briefinsight toacomplex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board by screenprinting,stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Wave soldering
Conventional single wave soldering is not recommended
forsurfacemountdevices (SMDs)or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
•Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
•For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
•Forpackageswithleads onfour sides,thefootprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Aug 26 31
Philips Semiconductors Product specification
Self Tuned Radio (STR) TEA5757; TEA5759
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
PACKAGE SOLDERING METHOD
WAVE REFLOW(1)
BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable(2) suitable
PLCC(3), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(3)(4) suitable
SSOP, TSSOP, VSO not recommended(5) suitable
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 67
Philips Semiconductors – a w orldwide compan y
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
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Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PTPhilipsDevelopment Corporation,SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
Printed in The Netherlands 545002/03/pp32 Date of release: 1999 Aug 26 Document order number: 9397 750 06058
