MRF174 - M/A-COM Technology Solutions

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

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CASE 211–11, STYLE 2

Designed primarily for wideband large–signal output and driver stages up

to 200 MHz frequency range.

N–Channel enhancement mode MOSFET

 Guaranteed performance at 150 MHz, 28 Vdc

Output power = 125 W

Minimum gain = 9.0 dB

 Efficiency = 50% (min.)

 Excellent thermal stability, ideally suited for Class A operation

 Facilitates manual gain control, ALC and modulation techniques

 100% tested for load mismatch at all phase angles with 30:1 VSWR

 Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DESIGN CONSIDERATIONS

The MRF174 is a RF MOSFET power N–channel en-

hancement mode field–effect transistor (FET) designed for

UHF power amplifier applications. M/A-COM RF MOSFETs

feature a vertical structure with a planar design, thus avoid-

ing the processing difficulties associated with V–groove

power FETs.

M/A-COM Application Note AN211A, FETs in Theory and

Practice, is suggested reading for those not familiar with the

construction and characteristics of FETs.

The major advantages of RF power FETs include high

gain, low noise, simple bias systems, relative immunity from

thermal runaway, and the ability to withstand severely mis-

matched loads without suffering damage. Power output can

be varied over a wide range with a low power dc control

signal, thus facilitating manual gain control, ALC and modu-

lation.

DC BIAS

The MRF174 is an enhancement mode FET and, there-

fore, does not conduct when drain voltage is applied. Drain

current flows when a positive voltage is applied to the gate.

See Figure 9 for a typical plot of drain current versus gate

voltage. RF power FETs require forward bias for optimum

performance. The value of quiescent drain current (IDQ) is

not critical for many applications. The MRF174 was charac-

terized at IDQ = 100 mA, which is the suggested minimum

value of IDQ. For special applications such as linear amplifi-

cation, IDQ may have to be selected to optimize the critical

parameters.

The gate is a dc open circuit and draws no current. There-

fore, the gate bias circuit may generally be just a simple re-

sistive divider network. Some special applications may re-

quire a more elaborate bias system.

GAIN CONTROL

Power output of the MRF174 may be controlled from its

rated value down to zero (negative gain) by varying the dc

gate voltage. This feature facilitates the design of manual

gain control, AGC/ALC and modulation systems.

(see Figure 8.)

AMPLIFIER DESIGN

Impedance matching networks similar to those used with

bipolar VHF transistors are suitable for MRF174. See M/A-

COM Application Note AN721, Impedance Matching Net-

works Applied to RF Power Transistors. The higher input

impedance of RF MOSFETs helps ease the task of broad-

band network design. Both small–signal scattering parame-

ters and large–signal impedances are provided. While the s–

parameters will not produce an exact design solution for high

power operation, they do yield a good first approximation.

This is an additional advantage of RF MOS power FETs.

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

The RF MOSFET Line

125W, 200MHz

Rev. V1

MRF174

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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