mem 1. MAB SKIS .B(L) <0.8 (W) X0.8(H) MDB \ BH (ATI, are 1.\-Yr-OlD BR. 2. EOS. Wi Features 1. Dimensions :1.6 (L)x0.8 (W)x0.8 (H) mm, being Ultra-small size @ Application 1.ID registration for pager 2. Other optical communication INFRARED CHIP LEDs CITISENSOR @ |\PRARRD RAF YILED CL-190IR-X BMRA TE/Maximum absolute rating (Ta25C) WB/ten 2S /Symbol EG /Rating BAZ /Unit as : : Miniature Surface Mountable Oe eee = = = Infrared Chip LED WANEF/Forward current le 50 mA nirare Ip JUVZANSRIE/Forward pulge current lep 1* A CL-190iR-X HEIBEE/Reverse voltage Ve 5 V MAST 3k E/Outline drawing iF BIG /Operation temperature Tor 25~+80 c RFRA Storage temperatura Tsr 30~+85 Cc saviame LA PIE . #1.Dutyit IKELF f=1KHz Soldenng terminal *1.Duty ratioSt1% Frequency=1KHz WE MBSE /Electro-optical characteristics (Ta=25'C) whe Polarity TAEI/ttem cemton | %t#/Conditions | Rd | BEN A! Ea Bat a WATE /Forward voltage Ve IF=20mA (12 116 Vv 320 /Revarse current ln Vr=5V _ | 100 | LA w4tr/Unit: mm MF IFM/Capacitance between terminals | Ct V=0V f=IMHz | 13 | | pF THA /Tolerance: 0.1 FOE R /Response time Tr, Tf Ir=20mMA _ 2 _ us BUSBRE/Radiant intensity le Ir=20mA 0.25 | 0.6 | (1.5) imW/sr HRA AY fe i deri mended for UDIERE/Peak wave length | > Ie=20mA | 950 / | nm lelowselerg comme ANT IEARIY Spectrum width of half velue |] AA iF=20mA | 45 | | nm so0_AKm For raflow soldering 4A + 2 | So 08 | 07! 08 M4514 /Characteristics IF-VeE RSE le-te FEE le-Ta $$t VF-Ta $$ (F-VF Characteristics le-IF Characteristics le-Ta Characteristics Vr-Ta Characteristics 1000 5 = a = 2 = = E z = - 2 o1 1.0 15 1 Ve(V) RUE Spectral Distribution lr=50mA Ta=25C 60 50 < = 4 & 30 20 a 880 900 920 940 360 980 1000 1020 A (nm) -40 -20 0 Relative le 100 10 Ie(mA) {emax-Ta 49t IFmax-Ta Characteristics FeatE Directive Characteristics 40 30. 20, 10 O 10 20H 40 t=20mA 1 ~40 -20 6 20 40 6600 680 100 Ta(C) 20 40 60 (BO Ta(C)