C
SOT23 NPN SILICON PLANAR
RF TRANSISTORS
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS — BFS17L - E1L
BFS17H - E1H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Peak Pulse Current ICM 50 mA
Continuous Collector Current IC25 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current ICBO 10
10 nA
µAVCB
=10V, IE=0
VCB
=10V, IE=0,
Tamb
= 100°C
Static Forward Current
Transfer Ratio hFE
BFS17L 25 100 IC=2.0mA, VCE=1.0V
BFS17H 70 200 IC=2.0mA, VCE=1.0V
20 125 IC=25mA, VCE=1.0V
Transition
Frequency fT1.0
1.3
GHz
GHz
IC=2.0mA, VCE=5.0V
f=500MHz
IC=25mA, VCE=5.0V
f=500MHz
Feedback Capacitance -Cre 0.85 pF IC=2.0mA, VCE=5V, f=1MHz
Output Capacitance Cobo 1.5 pF VCB=10V, f=1MHz
Input Capacitance Cibo 2.0 pF VEB=0.5V, f=1MHz
Noise Figure N 4.5 dB IC=2.0mA, VCE=5.0V
RS=50Ω, f=500MHz
Intermodulation
Distortion dim -45 dB IC=10mA, VCE=6.0V
RL=37.5Ω,Tamb
=25°C
Vo=100mV at fp=183MHz
Vo=100mV at fq=200MHz
measured at f(2q-p)
=217MHz
BFS17L
BFS17H
B
E
Spice parameter data is available upon request for this device
TBA
BFS17L
BFS17H
TYPICAL CHARACTERISTICS
f
T
v I
C
I
C
- Collector Current (mA)
f
T
- (GHz)
1µ10µ10m
100µ1m
I
C
- Collector Current (A)
h
FE
v I
C
h
FE
- Normalised Gain
20
40
60
80
1000.1
f=400MHz
1000
1
2
3
V
CE
- (V)
C
RE
v V
CE
C
RE
- (pF)
0
10 20 30
0.5
1.0
1.5
2.0
VCE=10V
0110
VCE=10V
VCE=5V
100m
f=1MHz
