APTG
T
75
X
120
E
3
APTGT75X120E3 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
1
-
3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
1719 15
8 9 1110 12
21
20
5 63 41 2 7
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 100
I
C
Continuous Collector Current T
C
= 80°C 75
I
CM
Pulsed Collector Current T
C
= 25°C 175
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 350 W
RBSOA Reverse Bias Operating Area T
j
= 125°C 150A@1100V
VCES = 1200V
IC = 75A @ Tc = 80°C
Application
• AC Motor control
Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
3 Phase bridge
Trench IGBT
®
Power Module
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APTG
T
75
X
120
E
3
APTGT75X120E3 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
2
-
3
Electrical Characteristics All ratings @ T
j
= 25°C unless otherwise specified
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 5mA
1200
V
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1200V 5 mA
T
j
= 25°C 1.4 1.7 2.1
V
CE(on)
Collector Emitter on Voltage V
GE
=15V
I
C
= 75A T
j
= 125°C 2.0 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 3 mA 5.0 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 500 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 5340
C
oes
Output Capacitance 280
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz 240
pF
T
d(on)
Turn-on Delay Time 260
T
r
Rise Time 30
T
d(off)
Turn-off Delay Time 420
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7Ω 70
ns
T
d(on)
Turn-on Delay Time 285
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 520
T
f
Fall Time 90
ns
E
off
Turn off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7Ω
9.5 mJ
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.6 2.1
V
F
Diode Forward Voltage I
F
= 75A
V
GE
= 0V T
j
= 125°C 1.6 V
T
j
= 25°C 3
E
r
Reverse Recovery Energy I
F
= 75A
V
R
= 600V
di/dt =825A/µs T
j
= 125°C 6 mJ
T
j
= 25°C 7.6
Q
rr
Reverse Recovery Charge I
F
= 75A
V
R
= 600V
di/dt =825A/µs
T
j
= 125°C 13.7 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.35
R
thJC
Junction to Case Diode 0.58 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
Torque Mounting torque To Heatsink M5 3 4.5 N.m
Wt Package Weight 300 g
http://store.iiic.cc/
APTG
T
75
X
120
E
3
APTGT75X120E3 – Rev 0 July, 2003
APT website – http://www.advancedpower.com
3
-
3
Package outline
PIN 1
PIN 21
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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