ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA IC25 = 138 A VCES = 1200 V VCE(sat)typ. = 2.8 V PSIG 100/12 PSIS 100/12* PSSI 100/12* Preliminary Data Sheet X15 AC 1 LMN S A IJK NTC L9 T16 X15 NTC X16 L9 F1 IK 10 X16 PSIG 100/12 IK 10 AC 1 PSIS 100/12* PSSI 100/12* IGBTs *NTC optional Symbol Conditions Maximum Ratings VCES TVJ = 25C to 150C VGES 1200 V 20 V Features * * * * * Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering IC25 IC80 TC = 25C TC = 80C 138 94 A A ICM VCEK VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 150 VCES A tSC (SCSOA) VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive 10 s * Ptot TC = 25C 568 W Applications Symbol Conditions VCE(sat) IC = 125 A; VGE = 15 V; TVJ = 25C TVJ = 125C VGE(th) IC = 3 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = 20 V td(on) tr td(off) tf Eon Eoff Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.8 3.2 4.5 VGE = 0 V; TVJ = 25C TVJ = 125C Inductive load, TVJ = 125C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15 Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) 3.4 V V 6.5 V 5 16 mA mA 320 nA 100 50 650 50 12.1 10.5 ns ns ns ns mJ mJ 5.5 nF 0.44 0.22 K/W K/W * * * * UL registered, E 148688 AC and DC motor control AC servo and robot drives power supplies welding inverters Advantages * * * Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSIG PSIS PSSI 100/12 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25C TC = 80C 154 97 Symbol Conditions Characteristic Values min. typ. max. VF IF = 75 A; TVJ = 25C TVJ = 125C 2.2 1.6 IRM trr IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V 79 220 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 m) 0.9 0.45 K/W K/W A A 2.5 Package style and outline Dimensions in mm (1mm = 0.0394") PSIG V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25C 4.75 5.0 3375 5.25 k K PSSI Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 C C VISOL IISOL 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 PSIS g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSIG PSIS PSSI 100/12 175 A 150 175 VGE=17V 15V TJ = 25C 13V IC 125 13V IC 125 11V 100 VGE=17V 15V TJ = 125C A 150 11V 100 75 75 50 9V 50 9V 25 25 0 0,0 121T120 0,5 1,0 1,5 2,0 2,5 121T120 0 0,0 3,0 V 0,5 1,0 1,5 2,0 2,5 VCE Fig. 1 Typ. output characteristics 150 IC 300 A 250 TJ = 25C IF 100 150 50 100 25 50 121T120 5 6 7 8 9 10 TJ = 125C TJ = 25C 200 75 0 3,5 V Fig. 2 Typ. output characteristics VCE = 20V 125 A 3,0 VCE 121T120 0 0,5 11 V 1,0 1,5 2,0 2,5 3,0 V 3,5 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 VCE = 600V IC = 75A V A IRM VGE 15 ns trr trr 200 80 10 TJ = 125C VR = 600V IF = 75A 40 IRM 5 0 121T120 0 100 200 300 QG 400 0 nC 100 121T120 0 200 400 600 800 A/s 0 1000 -di/dt Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ PSIG PSIS PSSI 100/12 40 mJ Eon Eon 30 td(on) tr 20 20 ns mJ 120 t 0 50 100 150 A 400 VCE = 600V VGE = 15V RG = 15 200 TJ = 125C 5 0 0 121T120 0 50 100 td(on) VCE = 600V VGE = 15V IC = 75A TJ = 125C 20 Eon Eon 0 150 A Fig. 8 Typ. turn off energy and switching times versus collector current ns 25 mJ 160 20 200 t 15 tr 10 tf IC Fig. 7 Typ. turn on energy and switching times versus collector current mJ 600 t IC 25 ns td(off) 10 80 121T120 800 Eoff Eoff 15 VCE = 600V VGE = 15V 40 RG = 15 TJ = 125C 10 0 160 5 Eoff 120 15 80 10 40 5 2000 VCE = 600V VGE = 15V IC = 75A TJ = 125C ns td(off) 1600 t 1200 Eoff 800 400 121T120 0 121T120 0 8 16 24 32 40 0 0 48 56 tf 0 8 16 24 RG Fig. 9 40 0 48 56 RG Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 200 1 A K/W 0,1 160 ICM ZthJC 120 diode 0,01 RG = 15 TJ = 125C VCEK < VCES 80 0,0001 121T120 0 200 400 600 IGBT 0,001 40 0 32 single pulse 0,00001 0,00001 0,0001 800 1000 1200 V VCE VID...125-12P1 0,001 0,01 0,1 s 1 t Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/