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Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
* G Deno tes RoHS Complaint, Pb Free Terminal Finish
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF f requency range.
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 16 Vdc
VCBO Co lle ctor-Base Voltage 30 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc
ICColl ector Current 150 mA
Thermal Data
PDTotal Device Dissipation @ TC = 75ºC
Derat e above 75ºC 2.0
20 Watts
mW/ ºC
Tstg Storage Tem perat ure Range -65 to +150 ºC
Macro X
Features
•Specif ied @ 12.5 V, 870 MHz Characterist ics
•Output Power = .5 W
•Minimum Gain = 8.0 dB
•Efficiency 50%
•Cost Effective Macro X Package
•Ele ctrole ss Tin Plated Leads for Improved So lde rability
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 16 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IB = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
ICES Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 1.0 mA
(on)HFE DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc) 30 -200 -
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) -2.5 3.0 pF
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
GPE Pow er Gain Te st Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc f = 870
MHz
f = 512
MHz
8.0
-9.5
13 -dB
ηCollector Efficiency Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc f = 870
MHz
f = 512
MHz
50
-65
60 - %
Typical Performance @ VCC = 7.5V
GPE Pow er Gain Te st Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc f = 870 MHz
f = 512
MHz
-
-6.5
10 -
-dB
ηCollector Efficiency Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc f = 870 MHz
f = 512
MHz
-
-70
65 -
-%
Figure 2. 870 MHz Test Fixtur e
C1, C2, C4, C5 — 1.0–10 pF Johanson C3, C6 — 0.001 µF Chip Capacitor
C7 — 1.0 µF Tantalum L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long
L2, L3 — Ferrite Bead Z1 — 50 Ω1.5 cm
Z2 — 30 Ω2.5 cm Z3 — 50 Ω2.0 cm
Z4 — 50 Ω1.2 cm Z5, Z6 — 50 Ω1.25 cm
Microstrip Elements — εr = 2.55
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
Efficiency (%)
GPE Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max
RF (Low Power PA / G eneral Purpose) Selection
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400
POWER MA CRO MRF557T NPN 870 1.5 8 55 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 110 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 110 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 612 50
Pout
GPE (dB)
GPE VCC
BVCEO
Type
Packag
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
Ftau (MHz)
Ccb(pF)
B
VCE
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF59 43, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 270 400
TO-39 MRF544
NPN
13.5 1500 70 400
RF (LNA / General Purpose) Selec tion Guide
1
3
1
2
3
1
3
4
1
4
8
5
Power Macro
Macro T
SO-8
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Low Co st RF Plastic Package Options
Advanced Power Technology reserves the right to change, without notice, the specifications and informati on contained herei n
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF559
MRF559G
Rev A 9/2005
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
1.
2.
3.
4.