DAN222M/DAN222/DAN202U/DAN202K
Diodes DAP222M/DAP222/DAP202U/DAP202K
DA227
1/3
Switching diode
DAN222M / DAN222 / DAN202U / DAN202K
DAP222M / DAP222 / DAP202U / DAP202K
DA227
zApplication
Ultra high speed switching
zFeatures
1) Four types of packaging are
available.
2) High speed. (trr=1.5ns T yp.)
3) Suitable for high packing density
layout.
4) High reliability.
zConstruction
Silicon epitaxial planar
zMarking
DAN222M
DAN222
DAN202U
DAN202K
DAP222M
DAP222
DAP202U
DAP202K
DA227
N
P
N20
(1)
(2)(3)
(4)
zExternal dimensions (Unit : mm)
2.8 0.2
1.6
0.3∼0.6
0.15
0.4
0∼0.1
1.1
0.8 0.1
2.9 0.2
1.9 0.2
0.95 0.95
+
0.2
−
0.1
+
0.2
−
0.1
+
0.1
−
0.06
+
0.1
−
0.05
2.1 0.1
1.25 0.1
0.1Min.
0∼0.1
0.15 0.05
0.3 0.1
2.0 0.2
1.3 0.1
0.650.65
0.9 0.1
0.3 0.6
0.2 0.2
0.50.5
1.0 0.1
1.6 0.2
0.3
0.8 0.1
1.6 0.2
−0.05
+0.1
+0.1
−0.05
+0.1
0.05 0.55 0.1
0.7 0.1
0.15 0.05
0∼0.1
0.1Min.
DAN202K / DAP202K DAN202U / DAP202U
DAN222 / DAP222
2.1 0.1
1.25 0.1
0.1Min.
0∼0.1
0.9 0.1
0.7
2.0 0.2
1.3 0.1
0.650.65
1.25 0.1
0.6 0.65
0.15 0.05
0.3 0.1 0.2 0.1
0.2 0.10.2 0.1
DA227
ROHM : EMD3
EIAJ : SC - 75
JEDEC : SOT - 416
0.8±0.1
0.5±0.05
0.13±0.05
0∼0.1
1.2±0.1
0.32±0.05
0.22±0.05
(1)
(2)
(3)
0.40.4
0.2±0.1 0.2±0.1
0.8±0.1
1.2±0.1
ROHM : VMD3
EIAJ :
JEDEC :
DAN222M / DAP222M
(All pins have the same dimensions)
(All pins have the same dimensions) (All pins have the same dimensions)
ROHM : SMD3
EIAJ : SC - 59
JEDEC : SOT - 346
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
ROHM : UMD4
EIAJ : SC - 82
JEDEC : SOT - 343
+
−
+
−
+
−
+
−
+
−
+
−
+
−
+
−
+
−+
−+
−
+
−
+
−
+
−+
−
+
−
+
−
+
−
+
−+
−+
−
+
−
+
−
+
−
−
+
−
+
−
+
−
+
−+
−
(1)
(2) (3)
(4)(1)
(2) (3)
(4)(1)
(2) (3)
(4)
(1)
(2) (3)
(4)
DAN222M/DAN222/DAN202U/DAN202K
Diodes DAP222M/DAP222/DAP202U/DAP202K
DA227
2/3
zCircuits
DAN202K
DAN202U
DAN222
DAN222M
DAP202K
DAP202U
DAP222
DAP222M
DA227
(2) (3)
(4)(1)
zA bsolute maximum ratings (Ta=25°C)
Type
Peak reverse
voltage
VRM
(V)
DC reverse
voltage
VR
(V)
Peak forward
current
IFM
(mA)
Surge current
(1µs)
Isurge
(A)
Mean rectifying
current
IO
(mA)
Power
dissipation
(TOTAL)
Pd
(mW)
Junction
temperature
Tj
(ºC)
P / N
Type
80 80 300 100 150 150 NDA227 4
DAN202K
80 80 300 100 4 200 150 N
DAP202K
80 80 300 100 4 200 150 P
DAN202U
80 80 300 100 4 200 150 N
DAP202U
80 80 300 100 4 200 150 P
DAN222 80 80 300 100 4 150 150 N
DAP222 80 80 300 100 4 150 150 P
DAN222M 80 80 300 100 4 150 100 N
DAP222M 80 80 300 100 4 150 100 P
Storage
temperature
Tstg (ºC)
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
−55 to +150
zElectrical characteristics (Ta=25°C)
Type
Forward voltage Reverse current Capacitance between terminals Reverse recovery time
Cond.
VF
(V)
Max. CT
(
pF
)
Max.
Cond.Cond. IR
(
µA
)
Max. trr
(
ns
)
Max.
Cond.
IF
(
mA
)
VR
(V)
f (MHz)
VR
(V)
VR
(V)
IF
(
mA
)
DAN202K 1.2 100 0.1 70 3.5 6 1 4 6 5
DAP202K 1.2 100 0.1 70 3.5 6 1 4 6 5
DAN202U 1.2 100 0.1 70 3.5 6 1 4 6 5
DAP202U 1.2 100 0.1 70 3.5 6 1 4 6 5
DAN222 1.2 100 0.1 70 3.5 6 1 4 6 5
DAP222 1.2 100 0.1 70 3.5 6 1 4 6 5
DAN222M 1.2 100 0.1 70 3.5 6 1 4 6 5
DAP222M 1.2 100 0.1 70 3.5 6 1 4 6 5
1.2 100 0.1 70 3.5 6 1 4 6 5DA227
DAN222M/DAN222/DAN202U/DAN202K
Diodes DAP222M/DAP222/DAP202U/DAP202K
DA227
3/3
zElectrical characteristic curves (Ta=25°C)
0
0
125
100
75
50
25
25 50 75 100 125 150
AMBIENT TEMPERATURE :Ta (ºC)
POWER DISSIPATION : P
d
/ P
d
Max.(%)
Fig.1 Power attenuation curve
−30ºC
0
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.4 0.6 0.8 1.0 1.2
0ºC
Ta=85ºC
25ºC
50ºC
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
1.4 1.6
Fig.2 Forward characteristics
(P Type)
Ta=100ºC
0
75ºC
50ºC
25ºC
0ºC
−25ºC
1000
100
10
0.1
0.01
10 20 30 40 50
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
1
Fig.3 Reverse characteristics
(P Type)
0
0.1
0.2
0.5
1
2
5
10
20
50
0.2 0.4 0.6 0.8 1.0 1.2
0ºC
−30ºC
Ta=85ºC
50ºC
25ºC
1.4 1.6
FORWARD CURRENT : IF (mA)
FORWARD VOLTAGE : VF (V)
Fig.4 Forward characteristics
(N Type)
REVERSE CURRENT : I
R
(nA)
REVERSE VOLTAGE : V
R
(V)
Fig.5 Reverse characteristics
(N Type)
0.01
100
1000
10
0.1
1
10 20 30 40 80706050
0
Ta=100°C
75°C
50°C
25°C
−25°C
0°C
0
0
4
2
2 4 6 8 10 12 14 16
P Type
N Type
f=1MHz
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
18 20
Fig.6 Capacitance between
terminals characteristics
0
0
10
9
8
7
6
5
4
3
2
1
10987654321
P Type
N Type
VR
=
6V
REVERSE RECOVERY TIME : t
rr (
ns)
FORWARD CURRENT : IF
(
mA)
Fig.7 Reverse recovery time
PULSE GENERATOR
OUTPUT 50ΩSAMPLING
OSCILLOSCOPE
50Ω
0.01µF
100ns
INPUT
D.U.T.
I
R
0.1I
R
trr
OUTPUT
0
5Ω
Fig.8 Reverse recovery time (t
rr
) measurement circuit
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
