2013-09-191
BFP420
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• For high gain and low noise amplifiers
• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz
Outstanding Gms = 21 dB at 1.8 GHz
• For oscillators up to 10 GHz
• Transition frequency fT = 25 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420 AMs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
4.5
4.1
V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC60 mA
Base current IB9
Total power dissipation1)
TS ≤ 98 °C
Ptot 210 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 250 K/W
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BFP420
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 3 µA
DC current gain
IC = 20 mA, VCE = 4 V, pulse measured
hFE 60 95 130 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP420
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 3 V, f = 2 GHz
fT18 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.15 0.3 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.37 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Minimum noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
NFmin - 1.1 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|214 17 -
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3 - 22 - dBm
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB - 12 -
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFP420
Total power dissipation Ptot = ƒ(TS)
0 30 60 90 °C 150
TS
0
30
60
90
120
150
180
mW
240
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
012V4
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
Ccb
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BFP420
Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 5 10 15 20 25 30 mA 40
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
GHz
30
fT
2 to 4
1.5
1
0.75
0.5
Power gain Gma, Gms, |S21|² = ƒ (f)
VCE = 2 V, IC = 20 mA
0 1 2 3 4 5 6
0
4
8
12
16
20
24
28
32
36
40
44
f [GHz]
G [dB]
G
ms
G
ma
|S
21
|
2
Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 4 8 12 16 20 24 28 32 mA 40
IC
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power gain Gma, Gms = ƒ (VCE)
IC = 20 mA
f = parameter in GHz
0 0.5 1 1.5 2 2.5 3 3.5 V4.5
VCE
0
2
4
6
8
10
12
14
16
18
20
22
24
dB
30
G
0.9
1.8
2.4
3
4
5
6
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BFP420
Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 4 8 12 16 20 24 28 32 mA 38
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 1.8 GHz
0 4 8 12 16 20 24 28 mA 36
IC
0
0.5
1
1.5
2
dB
3
F
ZS = 50 Ohm
ZS = ZSopt
Noise figure F = ƒ(f)
VCE = 2 V, ZS = ZSopt
01234GHz 6
f
0
0.5
1
1.5
2
dB
3
F
IC = 20 mA
IC = 5 mA
Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 5 mA / 20 mA
100
+j10
-j10
50
+j25
-j25
25
+j50
-j50
10
+j100
-j100
0
3GHz
4GHz
5GHz
0.45GHz
0.9GHz
1.8GHz
2.4GHz
6GHz
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BFP420
SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP420 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFP420 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
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BFP420
Package SOT343
2013-09-199
BFP420
Edition 2009-12-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be
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