BD135 / 137 / 139 — NPN Epit axial Silicon Transistor
Publication Order Number:
BD139/D
© 2007 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
BD135 / 137 / 139
NPN Epitaxial Silicon Transistor
Features
• Complement to BD136, BD138 and BD140 respectively
Applications
•Medium Power Linear and Switching
Ordering Information
Part Number Marking Package Packing Method
BD13516S BD135-16
TO-126 3L
Bulk
BD1356STU BD135-6
Rail
BD13510STU BD135-10
BD13516STU BD135-16
BD13716STU BD137-16
BD13710STU BD137-10
BD13716S BD137-16 Bulk
BD13916STU BD139-16 Rail
BD13910S BD139-10 Bulk
BD13916S BD139-16
BD1396STU BD139-6 Rail
BD13910STU BD139-10
1TO-126
1. Emitter 2.Collector 3.Base
BD135 / 137 / 139 — Features
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2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions an d s tres si ng the parts to these lev el s i s n ot re co mme nde d. In add i-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Va lues are at TC = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage BD135 45 VBD137 60
BD139 80
VCEO Collector-Emitter Voltage BD135 45 VBD137 60
BD139 80
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 1.5 A
ICP Collector Current (Pulse) 3.0 A
IBBase Current 0.5 A
PCDevice Dissipation TC = 25°C12.5 W
TA = 25°C1.25 W
TJJunction Temperature 150 °C
TSTG Storage Temperature - 55 to +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustainin g
Voltage
BD135 IC = 30 mA, IB = 0 45 VBD137 60
BD139 80
ICBO Collector Cut-off Current VCB = 30 V, IE = 0 0.1 μA
IEBO Emitter Cut-off Current VEB = 5 V, IC = 0 10 μA
hFE1 DC Current Gain VCE = 2 V, IC = 5 mA 25
hFE2 VCE = 2 V, IC = 0.5 A 25
hFE3 VCE = 2 V, IC = 150 mA 40 250
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
VBE(on) Base-Emitter On Voltage VCE = 2 V, IC = 0.5 A 1 V
Classification 6 10 16
hFE3 40 ~ 100 63 ~ 160 100 ~ 250
BD135 / 137 / 139 — Features
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Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
10 100 1000
0
10
20
30
40
50
60
70
80
90
100 VCE = 2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0
50
100
150
200
250
300
350
400
450
500
I
C
= 10 I
B
I
C
= 20 I
B
VCE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
BE
(on)
V
CE
= 5V
V
BE
(sat)
I
C
= 10 I
B
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
110100
0.01
0.1
1
10
BD139
BD137
BD135
10us
100us
1ms
DC
IC MAX. (Pulsed)
IC MAX. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
BD135 / 137 / 139 — Features
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4
Physical Dimensions
Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
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conditions, specifically the warranty therein, which covers ON Semiconductor products.
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