HN2D01FU
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TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01FU
Ultra High Speed Switching Application
HN2D01FU is composed of 3 independent diodes.
Low forward voltage : VF (3) = 0.98V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.5pF (typ.)
Pin A ssignment ( Top View) Marking
Maximum Ratings (Ta = 25°
°°
°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 240 * mA
Average forward current IO 80 * mA
Surge current (10ms) IFSM 1 * A
Power dissipation P 200 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55∼125 °C
* : This is maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes,
the maximum ratings per diodes is 75 % of the single diode one.
JEDEC ―
EIAJ ―
TOSHIBA 1-2T1C
Weight: 6.2mg
Unit in mm
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
r
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In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
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Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
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equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
r
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
y
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
t
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
y
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
r
others.
• The information contained herein is subject to change without notice.
000707EAA1
HN2D01FU
2001-02-08 2/3
Electrical Characteristics (Q1 Q2 Q3 Common, Ta = 25°
°°
°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― I
F = 1mA ― 0.62 ―
VF (2) ― I
F = 10mA ― 0.75 ―
Forward voltage
VF (3) ― I
F = 100mA ― 0.98 1.20
V
IR (1) ― V
R = 30V ― ― 0.1
Reverse current
IR (2) ― VR = 80V ― ― 0.5
µA
Total capacitance CT ― V
R = 0, f = 1MHz ― 0.5 3.0 pF
Reverse recovery time trr ― IF = 10mA (Fig.1) ― 1.6 4.0 ns
Fig.1 Reverse Recovery Time (trr) Test Circuit
HN2D01FU
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Q1, Q2, Q3 Common Q1, Q2, Q3 Common
Q1, Q2, Q3 Common
