TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS SYMBOL | CONDITION | UNIT | MIN. | TYP. | MAX. Output Power at 1dB PidB dBm 36.0 36.5 Compression Point VDS= 9V Linear Gain GL f= dB 7.0 7.5 14.0-14.5 Drain Current IpDS1 GHz A 1.8 2.0 Power Added Efficiency madd | % 23 3rd Order Intermodulation IM3 NOTE 1 dBc -42 -45 Distortion Af=5MHz* | Drain Current IDs2 | A 1.8 2.0 Channel-Temperature Rise ATch NOTE 2 CCIW 70 Toshiba measures the RF performance of all GaAs FET devices at ambient temperature(Ta=25O) The following table is an estimation of the RF performance at -40 to +70T. This estimation is based on experience and GaAs material characteristics. RF PERFORMANCE SPECIFICATIONS ( Ta=-40 to +70C ) CHARACTERISTICS | SYMBOL | CONDITION | UNIT | MIN. | TYP. | MAX. Output Power at 1dB P1dB dBm 35.3 Compression Point YDS= 9V Linear Gain GL f= dB 6.3 14.0-14.5 Drain Current IDS1 GHz A 1.8 2.0 Power Added Efficiency madd | % 3rd Order Intermodulation IM3 NOTE 1 dBc -40 Distortion Af=5MHz* Drain Current IDS2 A 1.8 2.0 Channel-Temperature Rise ATch NOTE 2 CIW _~ 70 Note 1: 2 tone test Pout=25.0dBm Single Cattier Level . * : The IM3 of the device does not depend or change by frequency separation of either 5MHz or 30KHz. Note 2: ATch=(VDS X IDS1 X Rth(c-c) ELECTRICAL CHARACTERISTICS (Ta= 25C) CHARACTERISTICS SYMBOL | CONDITION | UNIT | MIN TYP. | MAX 'Transconductance gm VDS= 3V mS 1200 IDS= 2.0A Pinch-off Voltage VGSoff |VDS=3V Vv -2.0 -3.5 -5.0 IDS= 60mA Saturated Drain Current IDSs VDS= 3V A 4.0 5.2 VGS=0V Gate-Source Breakdown VGSO = |IGS=-60nA Vv -5 _ Voltage Thermal Resistance Rth(Cc-c) {Channel to Case CW 2.9 3.5 ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL RATING UNIT Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 Vv Drain Current IDS 5.2 A Total Power Dissipation (Tc= 25 C) PT 30 WwW Channel Temperature Tch 175 C Storage Tstg -65 ~+175 C PACKAGE OUTLINE (2-9D1B) R2.4 @ . Fz Unit in mm 3 @ Gate m @ Source _ fs 3 @ Drain sO LT i Lo @ Ollosso1s |@ = 13.0+0.3 17.0MAX. a3 | 8.5MAX. = . Pa < ! iT | q | a x m dis o ait +! Alnl 2 ofe\_- - HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C.