SD101AWS - SD101CWS SCHOTTKY BARRIER DIODES
FEATURES :
* For general purpose applications
* The SD101 series is a metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
* The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
* These diodes are also available in the MiniMELF case
with type designations LL101A thru LL101C.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323
p
lastic Cas
e
* Wei
g
ht : a
pp
rox. 0.004
g
* SD101AWS Markin
g
Code : SJ
* SD101BWS Markin
g
Code : SK
* SD101CWS Markin
g
Code : SL
Maximum Ratin
g
s and Thermal Characteristics (TC = 25 °C unless otherwise noted)
Symbol Value Unit
SD101AWS 60
SD101BWS 50
SD101CWS 40
Maximum Single Cycle Surge 10 µs Square Wave IFSM 2A
Power Dissipation (Infinite Heat Sink) Ptot 150
(
1
)
mW
Thermal Resistance Junction to Ambient Air RӨJA 650
(
1
)
°C/W
Junction Temperature TJ125
(
1
)
°C
Storage temperature range TSTG -55 to + 150 °C
Electrical Characteristics (TJ = 25 °C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
SD101AWS 60 - -
SD101BWS 50 - -
V
SD101CWS 40 - -
SD101AWS
V
R= 50 V - - 200
SD101BWS
V
R= 40 V - - 200
SD101CWS
V
R= 30 V - - 200
SD101AWS - - 0.41
SD101BWS - - 0.40
SD101CWS - - 0.39
SD101AWS - - 1.00
SD101BWS - - 0.95
SD101CWS - - 0.90
SD101AWS - - 2.0
SD101BWS - - 2.1
SD101CWS - - 2.2
IF= IR= 5mA ,
recover to 0.1IR
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Page 1 of 2 Rev. 01 : May 4, 2006
Junction Capacitance Ctot
ns
nA
1-
pF
V(BR)R IR = 10 μA
- Reverse Recovery Time
VF
Trr
Forward Voltage Drop
IF = 15mA
IF = 1mA
VR = 0 V, f = 1 MHz
V
V
Parameter
VRRM
Repetitive Peak Reverse Voltage
Reverse Current IR
Test Condition
Reverse Breakdown Voltage
1.10
0.80
0.40
1.35
1.15
2.80
2.30
0.25
1.80
1.60
0.15 (max)
Dimensions in millimeters
SOD-323
Certificate TH97/10561QM Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES (SD101AWS - SD101CWS)
Typical variation of forward current Typical forward conduction curve
vs. forward voltage for primary conduction of combination Schottky barrier
through the schottky barrie
r
and PN junction guard ring
Typical capacitance curve as a Typical variation of reverse current
function of reverse Voltage at various temperatures
Page 2 of 2 Rev. 01 : May 4, 2006
20
40
80
Reverse Voltage , VR (V)
Reverse Current , IR (μA)
01020304050
0.01
1
100
0.02
0.1
10
0.05
0.2
0.5
2
5
20
50
Ta = 125 °C
Ta = 25 °C
0.01
1
0 0.5 1
Forward Voltage , VF (V)
10
Forward Current , IF (mA)
0.1
0.05
0.02
0.2
0.5
2
5
SD101AWS
SD101BWS
SD101CWS
01020304050
Reverse Voltage , VR (V)
0
1
2
Typical Capacitance , CT (pF)
Tj = 25°C
SD101AWS
SD101BWS SD101CWS
0 0.5 1
Forward Voltage , VF (V)
0
60
100
Forward Current , IF (mA)
SD101AWS
SD101BWS
SD101CWS
Ta = 100 °C
Certificate TH97/10561QM Certificate TW00/17276EM
