Single Phase Rectifier Bridge PSB 63 IdAV = 60 A VRRM= 800-1800V Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSB 63/08 PSB 63/12 PSB 63/14 PSB 63/16 PSB 63/18 Symbol Test Conditions IdAVM IFSM TC = 100 C, i dt 2 T VJ T VJM T stg V ISOL Maximum Ratings (per module) 60 A Isolation voltage 3000 V 1000 A VR = 0 t = 8.3 ms (60 Hz), sine 1100 A TVJ = TVJM t = 10 ms (50 Hz), sine 900 A VR = 0 t = 8.3 ms (60 Hz), sine 990 A TVJ = 45 C t = 10 ms (50 Hz), sine 5000 As VR = 0 t = 8.3 ms (60 Hz), sine 5020 As TVJ = TVJM t = 10 ms (50 Hz), sine 4050 As VR = 0 t = 8.3 ms (60 Hz), sine 4050 As -40... + 150 150 C C -40... + 150 C 50/60 Hz, RMS t = 1 min 2500 V IISOL 1 mA 3000 V Advantages * * * t=1s (M5) 5 Nm Weight Terminal connection torque (M5) typ. 5 160 Nm g Symbol Test Conditions IR VR = VRRM, TVJ = 25C 0.3 mA VR = VRRM, TVJ = TVJM 5 mA IF = 75 A, 1.3 V 0.8 V ds dA a Package with screw terminals t = 10 ms (50 Hz), sine Mounting torque RthJK * * * * * * TVJ = 45 C Md VF VTO rT RthJC Features TVJ = 25 C Characteristic Value For power-loss calculations only 8 per Diode; DC current per module per Diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop Ul registered E 148688 Applications * * * * Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Package style and outline Dimensions in mm (1mm = 0.0394") m 0.58 0.145 0.825 0.206 K/W K/W K/W K/W 10.0 9.4 50 mm mm m/s Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach, Germany Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net 200 IF(OV) -----IFSM 150 IFSM (A) TVJ=45C TVJ=150C 1.6 550 500 1.4 100 1.2 1 50 0 VRRM 0.8 T vj=150C 1/2 VRRM Tvj=25C 0 0.5 1.0 1.5 0.6 2.0 VF (V) 0.4 0 10 Forward current versus voltage drop per diode DC sin.180 rec.120 rec.60 rec.30 [A] 120 100 1 VRRM 1 2 10 t[ms] 10 3 10 Surge overload current per diode IFSM: Crest value t: duration 2.5 K/W Z thJK 2 Z thJC 1.5 80 IdAV 1 60 40 0.5 20 Zth 0 50 100 T C(C) 150 200 Maximum Forward current at case temperature 0.01 0.1 t[s] 1 10 Transient thermal impedance per diode POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach, Germany Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net