Single Phase PSB 63 IdAV = 60 A
Rectifier Bridge VRRM= 800-1800V
Features
•Package with screw terminals
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•Ul registered E 148688
Applications
•Supplies for DC power equipment
•Input rectifier for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, W alpersdorfer Str . 53
D - 91126 Schwabach, Germany
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
VRSM VRRM Type
VDSM VDRM
(V) (V)
800 800 PSB 63/08
1200 1200 PSB 63/12
1400 1400 PSB 63/14
1600 1600 PSB 63/16
1800 1800 PSB 63/18
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
IdAVM TC = 100 °C, (per module) 60 A
IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1100 A
TVJ = TVJM t = 10 ms (50 Hz), sine 900 A
VR = 0 t = 8.3 ms (60 Hz), sine 990 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 5000 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 5020 A²s
TVJ = TVJM t = 10 ms (50 Hz), sine 4050 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 4050 A²s
TVJ -40... + 150 °C
TVJM 150 °C
Tstg -40... + 150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V∼
IISOL ≤ 1 mA t = 1 s 3000 V∼
MdMounting torque (M5) 5 Nm
Terminal connection torque (M5) 5 Nm
Weight typ. 160 g
IRVR = VRRM, TVJ = 25°C ≤ 0.3 mA
VR = VRRM, TVJ = TVJM ≤ 5 mA
VFIF = 75 A, TVJ = 25 °C ≤ 1.3 V
VTO For power-loss calculations only 0.8 V
rT 8 mΩ
RthJC per Diode; DC current 0.58 K/W
per module 0.145 K/W
RthJK per Diode; DC current 0.825 K/W
per module 0.206 K/W
dsCreeping distance on surface 10.0 mm
dACreeping distance in air 9.4 mm
aMax. allowable acceleration 50 m/s²
Data according to IEC 60747 refer to a single diode unless otherwise stated
Symbol Test Conditions Characteristic Value
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach, Germany
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Surge overload current
per diode
IFSM: Crest value t: duration
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
550 500
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
Forward current versus
voltage drop per diode
0.5 1.0 1.5 2.0
0
T =25°C
vj
T =150°C
vj
V (V)
F
50
100
150
200
50 100 150 200
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
100
120
80
60
40
20
0
Maximum Forward current
at case temperature
0.01 0.1 110
0.5
1
1.5
2
2.5
K/W
Zth
t[s]
ZthJK
ZthJC
T ransient thermal impedance per diode
