Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS -30V
▼ Simple Drive Requirement RDS(ON) 50mΩ
▼ Fast Switching ID- 20A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current -13
Pulsed Drain Current1-60
12.5
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
- 30
+20
- 20
0.1
AP9435GH/J
Rating
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
200902256
1
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-252/TO-251 package is widely used for commercial-industrial
application.
G
D
S
GDSTO-252(H)
GDSTO-251(J)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-10A - - 50 mΩ
VGS=-4.5V, ID=-5A - - 90 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-10A - 10 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V - - -250 uA
IGSS Gate-Source Leakage VGS=+ 20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-10A - 8 16 nC
Qgs Gate-Source Charge VDS=-24V - 1.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4.3 - nC
td(on) Turn-on Delay Time2VDS=-15V - 6.3 - ns
trRise Time ID=-10A - 46 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 20 - ns
tfFall Time RD=1.5Ω- 7.4 - ns
Ciss Input Capacitance VGS=0V - 570 740 pF
Coss Output Capacitance VDS=-25V - 80 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-5A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-10A, VGS=0V, - 18 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9435GH/J
3.Surface mounted on 1 in2 copper pad of FR4 board
2
AP9435GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
20
40
60
80
0246810
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC
VG=-4.0V
-4.5V
-10V
-8.0V
-6.0V
0
10
20
30
40
50
60
70
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150oC
VG=-4.0V
-4.5V
-6.0V
-10V
-8.0V
1
1.2
1.4
1.6
1.8
2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
-VGS(th) (V)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
30
40
50
60
70
80
90
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-10A
TC=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-10A
VG=-10V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9435GH/J
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS QGD
QG
Charge
10
100
1000
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID(A)
100us
1ms
10ms
100ms
DC
TC=25oC
Single Pulse
0
2
4
6
8
10
12
048121620
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-10A
VDS =-24V
