Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Fast Switching Performance BVDSS 60V
▼ Single Drive Requirement RDS(ON) 36mΩ
▼ Full Isolation Package ID23A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4.0 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
200712071-1/4
AP9971GI
Parameter Rating
Drain-Source Voltage 60
Gate-Source Voltage ±20
Continuous Drain Current, VGS @ 10V 23
Continuous Drain Current, VGS @ 10V 14
Pulsed Drain Current180
Total Power Dissipation 31.3
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Thermal Data Parameter
Storage Temperature Range
G
D
S
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
GDSTO-220CFM(I)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 36 mΩ
VGS=4.5V, ID=12A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 17 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=60V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=18A - 18 30 nC
Qgs Gate-Source Charge VDS=48V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC
td(on) Turn-on Delay Time2VDS=30V - 9 - ns
trRise Time ID=18A - 24 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 26 - ns
tfFall Time RD=1.67Ω-7-
ns
Ciss Input Capacitance VGS=0V - 1700 2700 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=25A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=18A, VGS=0V, - 37 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 38 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9971GI
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP9971GI
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.31 trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
25
30
35
40
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=18A
TC=25oC
0
20
40
60
80
100
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=3.0V
TC=25oC10V
7.0V
5.0V
4.5V
0
10
20
30
40
50
60
70
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG=10V
ID=18A
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
0.31 trr
Qrr
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP9971GI
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Crss
Coss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
14
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
V DS =38V
V DS =48V
I
D=18A
Package Outline : TO-220CFM
Millimeters
MIN NOM MAX
A4.50 4.70 4.90
A1 2.30 2.65 3.00
b0.50 0.70 0.90
b1 0.95 1.20 1.50
c0.45 0.65 0.80
c2 2.30 2.60 2.90
E9.70 10.00 10.40
L3 2.91 3.41 3.91
L4 14.70 15.40 16.10
φ---- 3.20 ----
e---- 2.54 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220CFM
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
YWWSSS
Part Number
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
YWWSSS
Package Code
9971GI
LOGO
A1
A
c
E
φ
b
b1
e
L4
c2
A1
A
c
E
φ
b
b1
e
L4
c2
meet RoHS requirement
L3
