AP9971GI RoHS-compliant Product Advanced Power Electronics Corp. Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Single Drive Requirement Full Isolation Package BVDSS 60V RDS(ON) 36m ID 23A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 23 A ID@TC=100 Continuous Drain Current, VGS @ 10V 14 A 80 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 4.0 /W Rthj-a Thermal Resistance Junction-ambient Max. 65 /W Data and specifications subject to change without notice 200712071-1/4 AP9971GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.05 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 36 m VGS=4.5V, ID=12A - - 50 m VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=18A - 17 - S VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=18A - 18 30 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC VDS=30V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=18A - 24 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 26 - ns tf Fall Time RD=1.67 - 7 - ns Ciss Input Capacitance VGS=0V - 1700 2700 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Min. Typ. IS=25A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=18A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 38 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP9971GI 100 70 o T C =25 C 60 10V 7.0V 50 5.0V o T C =150 C 10V 7.0V 5.0V 60 ID , Drain Current (A) ID , Drain Current (A) 80 4.5V 40 4.5V 40 30 20 V G =3.0V 20 V G =3.0V 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 2.5 I D =18A V G =10V I D = 18 A T C =25 o C Normalized RDS(ON) 2.0 RDS(ON) (m) 35 30 1.5 1.0 0.5 0.31 trr 0.0 25 3 5 7 9 11 -50 0 50 100 o V GS , Gate-to-Source Voltage (V) Qrr 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 20 2.5 16 T j =25 o C o T j =150 C 2 IS(A) VGS(th) (V) 12 8 1.5 1 4 0.5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9971GI f=1.0MHz 14 10000 I D =18A V DS =30V V DS =38V V DS =48V 10 8 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 0 10 0 10 20 30 40 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 ID (A) 1ms 10ms 100ms 1s DC 1 o T C =25 C Single Pulse Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.31 trr 0.01 0.1 0.1 1 10 100 0.00001 0.0001 0.01 0.1 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 Qrr 1 Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 L4 MIN NOM MAX A 4.50 4.70 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30 2.60 2.90 E 9.70 10.00 10.40 L3 2.91 3.41 L4 14.70 15.40 16.10 e L3 b1 A1 b c ---- 3.20 ---- ---- 2.54 ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220CFM 9971GI 3.91 Part Number meet RoHS requirement Package Code LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence