VUB116-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 120 A I C25 I FSM = 700 A VCE(sat) = = 120 A 1.8 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB116-16NOXT Backside: isolated 24+25 29 30 45+46 NTC ~14+15 ~10+11 ~ 6+7 3 21+22 41 40 48+49 Features / Advantages: Applications: Package: E2-Pack Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling Phase Change Material available Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128d VUB116-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 IR reverse current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 150C 1.5 mA IF = TVJ = 25C 1.19 V 1.64 V 1.12 V VF forward voltage drop 40 A min. typ. I F = 120 A IF = TVJ = 125 C 40 A I F = 120 A TC = 105 C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved V 1.70 V T VJ = 150 C 120 A TVJ = 150 C 0.80 V 7.6 m d= for power loss calculation only Ptot max. Unit 1700 V 0.65 K/W 0.1 K/W TC = 25C 190 W t = 10 ms; (50 Hz), sine TVJ = 45C 700 A t = 8,3 ms; (60 Hz), sine VR = 0 V 755 A t = 10 ms; (50 Hz), sine TVJ = 150 C 595 A t = 8,3 ms; (60 Hz), sine VR = 0 V 645 A t = 10 ms; (50 Hz), sine TVJ = 45C 2.45 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 2.37 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 1.77 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 1.73 kAs 27 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20171128d VUB116-16NOXT Ratings Brake IGBT Symbol VCES Definition Conditions min. VGES max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TC = 25C 120 A TC = 80 C 84 A 390 W 2.1 V TVJ = collector emitter voltage I C80 TC = 25C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 3 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 75 A t d(on) turn-on delay time IC = 75 A; V GE = 15 V TVJ = 25C 1.8 TVJ = 125C 2.1 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25C 6.0 6.5 V 0.2 mA 0.6 mA TVJ = 125C 75 A VGE = 15 V; R G = 10 VGE = 15 V; R G = 10 SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 900 V; VGE = 15 V I SC short circuit current RG = 10 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 230 nC 70 ns 40 ns 250 ns 100 ns 6.8 mJ 8.3 mJ TVJ = 125C VCEK = 1200 V I CM V 500 inductive load VCE = 600 V; IC = 5.5 max. Unit 1200 V TVJ = 125C 225 A 10 s A 300 0.32 K/W K/W 0.15 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = trr reverse recovery time IF = 30 A R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 600 V 400 A/s TVJ = 125C 1.99 V 1.8 C 23 A 150 ns 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20171128d VUB116-16NOXT Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 200 Unit A -40 150 C -40 125 C 125 C 176 Weight MD 3 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 6 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA 2D Data Matrix XXXXXXXXXX yywwx Logo UL Part number Date Code Location Ordering Standard Ordering Number VUB116-16NOXT Marking on Product VUB116-16NOXT Delivery Mode Box Quantity 6 Code No. 510755 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25 B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level Rectifier Brake IGBT Brake Diode V 0 max threshold voltage 0.8 1.1 1.31 R0 max slope resistance * 4.5 17.9 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved T VJ = 150 C 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20171128d VUB116-16NOXT Outlines E2-Pack D A 17 0,5 20,6 0,5 3,5 0,5 O6 Vor der Montage typ. 100 m konvex uber 75 mm Before mounting typ. 100 m convex over 75 mm O 2,5 -0,3 O 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 0,2 15 1 6 Detail A 0,8 0,05 1,2 0,05 93 0,2 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 C 61,74 65,55 Index 41,90 46 32 0,2 O 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 0,2 65,55 69,36 23,64 27,45 79,2 107,5 0,3 Bemerkung / Note: - Nichttolerierte Mae nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT(R) (Groe / size: K25) - Max. Schraubenlange / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24+25 29 30 45+46 NTC ~14+15 ~10+11 ~ 6+7 3 21+22 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 41 40 48+49 Data according to IEC 60747and per semiconductor unless otherwise specified 20171128d VUB116-16NOXT Rectifier 160 600 120 500 10000 TVJ = 45C 2 It IF IFSM 80 [A] 400 TVJ= 45C 1000 [A] TVJ= 150C 2 [A s] TVJ = 150C 300 40 TVJ = 125C TVJ = 150C 0 0.0 0.5 TVJ = 25C 1.0 1.5 50Hz, 80% VRRM 200 0.001 0.01 2.0 2 1 3 4 5 6 7 89 t [ms] 2 Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current versus voltage drop per diode Fig. 3 I t versus time per diode 140 DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 40 1 t [s] VF [V] 60 100 0.1 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 20 40 20 0 0 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0 25 50 Tamb [C] IF(AV)M [A] 75 100 125 150 175 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1 ZthJC 0.1 [K/W] 0.01 1 10 100 1000 ti Ri 0.085 0.012 0.041 0.007 0.309 0.036 0.215 0.102 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128d VUB116-16NOXT Brake IGBT 150 150 VGE = 15 V 125 125 100 IC 11V 125 100 TVJ = 25C 100 IC IC 75 75 TVJ = 125C [A] 75 [A] 9V 50 50 25 25 0 [A] 50 TVJ = 125C 1 2 3 1 2 3 4 5 12 8 [mJ] [mJ] 7 Eoff 5 4 0 Eon 200 300 IC = 75 A VCE = 600 V VGE = 15 V TVJ = 125C 5 0 40 80 120 160 8 12 16 20 24 IC [A] RG [Ohm] Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance QG [nC] Fig. 4 Typ. turn-on gate charge Eon 6 0 100 Eoff E 8 [V] 10 11 12 13 9 E 10 9 10 RG = 10 Ohm VCE = 600 V VGE = 15 V TVJ = 125C 75 A VCE = 600 V 8 Fig. 3 Typ. tranfer characteristics 16 0 7 VGE [V] Fig. 2 Typ. output characteristics 20 15 6 VCE [V] Fig. 1 Typ. output characteristics = TVJ = 25C 0 0 VCE [V] IC TVJ = 125C 25 0 0 VGE 150 13V VGE = 15 V 17 V 19 V 1 ZthJC 0.1 [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128d VUB116-16NOXT Brake Diode 80 60 5 TVJ = 125C VR = 800 V 70 4 60 IF 50 IF = 60 A 30 A 15 A 3 Qr 40 [A] TVJ = 125C 25C 30 50 IF = 60 A 30 A 15 A 40 IRM 30 [C] 2 [A] 20 20 1 0 0 1 2 0 100 3 TVJ = 125C VR = 800 V 10 10 0 1000 VF [V] 0 200 2.0 220 1.5 trr TVJ = 125C IF = 30 A 1.0 80 0.8 60 0.6 VFR Kf 1.0 [ns] 160 trr [s] [V] 40 IRM 0.5 140 QR 0.4 20 0.2 trr VFR 0.0 0 120 0 1000 1.2 100 IF = 60 A 30 A 15 A 180 800 120 TVJ = 125C VR = 800 V 200 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Forward current IF vs. VF 400 -diF /dt [A/s] -diF /dt [A/s] 40 80 120 160 0 200 TVJ [C] 400 600 800 1000 -diF /dt [A/s] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC 0.1 i [K/W] Ri [K/W] 1 0.465 2 0.179 3 0.256 0.01 0.001 0.01 0.1 ti [s] 0.0052 0.0003 0.0397 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128d Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: VUB116-16NOXT