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Rev.3-2-09202019
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SI2324
Features
N-Channel MOSFET
Maximum Ratings
•TrenchFET Power MOSFET
•Low RDS(ON)
•Epoxy Meets UL 94 V-0 Flammability Rating
•Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
•Operating Junction Temperature Range: -55°C to +150°C
•Storage Temperature Range: -55°C to +150°C
•Thermal Resistance: 104°C/W Junction to Ambient(Note 1)
Marking:S24
Internal Structure
SOT-23
1. *$7E
2. 6285&(
3. '5$,1
D
G
S
A
CB
D
E
F
GHJ
K
L
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D0.0340.041 0.851.05
E0.067 0.0831.702.10
F 0.018 0.024 0.45 0.60
G0.00040.0060.01 0.15
H 0.035 0.0430.90 1.10
J 0.003 0.007 0.08 0.18
K0.0120.020 0.300.51
DIMENSIONS
DIM INCHES MM NOTE
L0.020 0.50
0.0070.20
0.079
2.000 inches
mm
0.031
0.800
0.035
0.900
0.037
0.950
0.037
0.950
Suggested Solder Pad Layout
3
12
Symbol
VDS
VGS
ID
Parameter Rating Unit
V
V
A
Drain Current-Continuous
±20
2.0
Drain-Source Voltage
Gate-Source Voltage
100
IDMADrain Current-Pulsed(Note 2) 8.0
PDWTotal Power Dissipation 1.2
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SI2324
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 100V
Gate-Threshold Voltage(Note 2)VGS(th) VDS=VGS, ID=250µA 1.22.8V
Gate-Body Leakage Current IGSS VGS=± 20V, VDS=0V ±100nA
Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V1µA
Drain-Source On-Resistance(Note2)RDS(on)
VGS=10V, ID=1.5A234
mΩ
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Turn-On Delay Time td(on)
Turn-On Rise Time tr39
Turn-Off Delay Time td(off) 26
Turn-Off Fall Time tf20
VDD=50V,RL=39Ω,VGEN=4.5V,
ID=1.3A,RGEN=1Ω
ns
Static Characteristics
Dynamic Characteristics(Note 3)
VDS=50V,VGS=0V, f=1MHz pF
VGS=4.5V, ID=0.5A278
Forward Transconductance(Note2) gFS VDS=20V, ID=1.5A2.0 S
190
2.8
13
45
Switching Characteristics(Note 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Turn-Off Fall Time
VDS=50V,VGS=4.5V,ID=1.6A
5.8
0.75
1.4
nc
VSD
Diode Forward voltage VGS=0V,IS=1.3A1.2 V
Notes:
1.Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2.Repetitive Rating: Pluse Width Limited By Junction Temperature.
3.Pulse Test: Pulse Width≤300μA, Duty Cycle≤0.5%.
4.Guaranteed By Design, Not Subject to Production Testing.
Gate Resistance Rgf=1MHz 0.3
22
Ω
VGS=6.0V, ID=1.0A267
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Curve Characteristics
SI2324
01 45
0
2
4
6
8
10
VGS=3V
VGS=3.5V
VGS=3.8V
VGS=12V,10V,8V
TA=25°C
Pulsed
Drain Current (A)
23
Drain To Source Voltage (V)
Fig. 1 - Output Characteristics
1 506
1
2
3
4
0
5
VDS= 3V
Pulesd
TA=100°C
Drain Current (A)
234
Gate To Source Voltage (V)
Fig. 2 - Transfer Characteristics
TA=25°C
180
200
220
240
260
160
280
01 45
TA=25°C
Pulsed
23
Drain Current (A)
Drain-Source On-Resistance (mΩ)
Fig. 3 - RDS(ON)—ID
VGS=10V
VGS=4.5V
VGS=6V
300
600
0
900
0 2 4 6 8 10
TA=100°C
Pulsed
Gate To Source Voltage (V)
Drain-Source On-Resistance (mΩ)
Fig. 4 - RDS(ON)—VGS
TA=25°C
ID=0.8 A
0.01
0.1
1
0.001
6
0.0 0.2 0.4 1.2 1.4 1.6
T
A
=100°C
Pulsed
0.6 0.8 1.0
Source To Drain Voltage (V)
Source Current (A)
Fig. 5 - I
S
—V
SD
TA=25°C
50 10025 125
1.5
1.6
1.7
1.8
1.9
2.0
1.4
2.1
ID= 250μA
Threshold Voltage (V)
75
Junction Temperature (°C)
Fig. 6 - Threshold Voltage
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Ordering Information
SI2324
Device Packing
Part Number-TP Tape&Reel:3Kpcs/Reel
Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF
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