ABB Semiconductors AG reserves the right to change specifications without notice.
VDRM = 2500 V
ITGQM = 2000 A
ITSM =16kA
VT0 =1.66V
rT=0.57
mΩ
VDClin = 1400 V
Gate turn-off Thyristor
5SGA 20H2501
Doc. No. 5SYA 1205-01 Aug. 2000
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
VDRM Repetitive peak off- stat e voltage 2500 V VGR ≥ 2V
VRRM Repetitive peak revers e voltage 17 V
IDRM Repetitive peak off-state current ≤30 mA VD = VDRM VGR ≥ 2V
IRRM Repetitive peak reverse current ≤50 mA VR = VRRM RGK = ∞
VDClink Permanent DC voltage for 100
FIT fa ilu re ra te 1400 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data (see Fig. 19) min. 17 kN
FmMounting force max. 24 kN
AAcceleration:
Device unclamped
Device clamped 50
200 m/s2
m/s2
MWeight 0.8 kg
DSSurface creepage distance ≥22 mm
DaAir strike distance ≥13 mm
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Doc. No. 5SYA 1205-01 Aug. 2000 page 2 of 9
GTO Data
On-state
ITAVM Max. average on-state current 830 A Half sine wave, TC = 85 °C
ITRMS Max. RMS on-state current 1300 A
ITSM 16 kA tP=10msT
j = 125°CMax. peak non-repetitive
surge current 32 kA tP= 1 ms Afte r surge:
I2t Limiting load int egral 1.28⋅106A2st
P=10msV
D = VR = 0V
0.51⋅106A2st
P=1ms
VTOn-state voltage 2.80 V IT= 2000 A
VT0 Threshold voltage 1.66 V IT= 200 - 2500 A Tj = 125 °C
rTSlope resistance 0.57 mΩ
IHHolding current 50 A Tj=25 °C
Gate
VGT Gate trigger voltage 1.0 V VD= 24 V Tj = 25 °C
IGT Gate trigger current 2.5 A RA=0.1 Ω
VGRM Repetit ive peak reverse voltag e 17 V
IGRM Repetitive peak reverse current 50 mA VGR =V
GRM
Turn-on sw itching
di/dtcrit Max. rate of rise of on-state 400 A/µ s f = 200Hz I T = 2000 A, Tj = 125 °C
curren t 700 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs
tdDelay time 1.5 µs VD=0.5V
DRM Tj= 125 °C
trRise time 3.5 µs IT= 2000 A di/dt = 200 A/µs
ton(min) Min. on-t ime 80 µs IGM =30Adi
G/dt = 20 A/µs
Eon Turn-on energy per pulse 0.75 Ws CS=4µFR
S=5
Ω
Turn-off switching 2000 A VDM =V
DRM diGQ/dt = 30 A/µsITGQM Max controllable turn-off
current CS=4 µF L
S≤0.3 µH
tsStorage time 22.0 µs VD=½VDRM VDM =V
DRM
tfFall time 2.0 µ s Tj=125°Cdi
GQ/dt = 30 A/µs
toff(min) Min. off-time 80 µs ITGQ =I
TGQM
Eoff Turn-off energy per pulse 3.2 W s CS=4µFR
S=5
Ω
IGQM Peak turn-off gate current 600 A LS≤0.3 µH
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Thermal
TjStorage and operating -40...125°C
junction temperature range
RthJC Thermal resistance 30 K/kW Anode side cooled
junction to case 39 K/kW Cathode side cooled
17 K/kW Double side cooled
RthCH Thermal resistance case to 10 K/kW Sing le side cooled
heat sink 5 K/kW Double side cooled
i1234
RI (K/kW) 11.7 4.7 0. 64 0.0001
Anal ytical f unction for transient thermal
impedance:
)e-(1R = (t)Z 4
1i
/t-
thJC i
∑
=
i
τ
τi (s) 0.9 0.26 0.002 0.001
Fig. 1 Transient thermal impedance, junction to case.
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Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs.
average on-state current.
Fig. 4 Surge current and fusing integral vs. pulse
width
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Fig. 5 Forward blocking voltage vs. gate-cathode
resistance. Fig. 6 Static dv/dt capability: Forward blocking
voltage vs. neg. gate voltage or gate
cathode resistance.
Fig. 7 Forward e ga te cu rren t v s . fo rard gate
voltage. Fig. 8 Gate trigger current vs. junction
temperature
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Fig. 9 Turn-on energy per pulse vs. on-state
current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state
current and current rise rate
Common Test conditions for figures 9, 10 and 11:
diG/dt = 20 A/µs
CS = 4 µF
RS = 5 Ω
Tj = 125 °C
Definition of Turn-on energy:
)0.1 I 0, (t G
20
0
GMT
s
Don IdtIVE ⋅==⋅= ∫
µ
Common Test conditions for figures 12, 13 and 15:
Definition of Turn-off energy:
)0.9 I 0, t ( T
40
0
TGQT
s
Doff IdtIVE ⋅==⋅= ∫
µ
Fig. 11 Turn-on energy per pulse vs. on-state
current and turn-on voltage.
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Fig. 12 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage. Extracted gate
charge vs. turn-off current.
Fig. 13 Turn-off energy per pulse vs. turn-off
current and snubber capacitance.
Fig. 14 Requir ed snubber capacitor vs. max
allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time
and peak turn-off gate current vs. junction
temperature
Fig. 16 Storage time and peak turn-off gate current
vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate
current vs. turn-off current
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Fig. 18 General current and voltage waveforms with GTO- specif ic symbols
Fig. 19 Outline drawing. All dimensions are in
millimeter s and represent nominal values
unless stated otherwise.
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ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA 1205-01 Aug. 2000
Fabri kstra sse 2
CH-5600 Lenzburg, Switzerland
Tel: +41 (0)62 888 641 9
Fax: +41 (0)62 888 630 6
E-mail info@ch.abb.com
Internet www.abbsem.com
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltag e VR may exceed the rate
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : VGR = 10… 15 V.
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