1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol MPS918 MPS3563 Unit
Collector–Emitter Voltage VCEO 15 12 Vdc
Collector–Base Voltage VCBO 30 30 Vdc
Emitter–Base Voltage VEBO 3.0 2.0 Vdc
Collector Current — Continuous IC50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD0.85
6.8 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA(1) 357 °C/W
Thermal Resistance, Junction to Case R
q
JC 147 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = 3.0 mAdc, IB = 0) MPS918
MPS3563
V(BR)CEO 15
12 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = 1.0
m
Adc, IE = 0) MPS918
(IC = 100
m
Adc, IE = 0) MPS3563
V(BR)CBO 30
30 —
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) MPS918
MPS3563
V(BR)EBO 3.0
2.0 —
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0) MPS918
MPS3563
ICBO —
—10
50
nAdc
1. R
q
JA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
1.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
MPS918/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 3.0 mAdc, VCE = 1.0 Vdc) MPS918
(IC = 8.0 mAdc, VCE = 10 Vdc) MPS3563
hFE 20
20 —
200
—
Collector–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc) MPS918 VCE(sat) — 0.4 Vdc
Base–Emitter Saturation V oltage
(IC = 10 mAdc, IB = 1.0 mAdc) MPS918 VBE(sat) —1.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS918
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS3563
fT600
600 —
1500
MHz
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz) MPS918
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MPS918
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MPS3563
Cobo —
—
—
3.0
1.7
1.7
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MPS918 Cibo —2.0 pF
Small–Signal Current Gain
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MPS3563 hfe 20 250 —
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 kΩ, f = 60 MHz) MPS918 NF — 6.0 dB
FUNCTIONAL TEST
Common–Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) MPS918
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) MPS3563
(Gfd + Gre
t
–20 dB)
Gpe 15
14 —
—
dB
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) MPS918 Pout 30 — mW
Oscillator Collector Efficiency
(IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) MPS918 η25 — %
2. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
1.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MPS918/D
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