Publication Date :Apr.2011
1
< Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H3847M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 378- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=60W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 5mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 378-470MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA60H3847M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA60H3847M1-101 Antistatic tray,
10 modules/tray
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
BLOCK DIAGRAM
PACKAGE CODE: H2M
41
5
2 3
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
2
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V, Pin=0W 17 V
VGG Gate Voltage VDD<12.5V, Pin=50mW 6 V
Pin Input Power 100 mW
Pout Output Power 80 W
Tcase(OP) Operation Case Temperature Range
f=378-470MHz,
VGG≦5V -30 to +100 °C
Tstg Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
F Frequency Range 378 - 470 MHz
Pout Output Power VDD=12.5V 60 - - W
TTotal Efficiency VGG=5V 40 - - %
2fo2nd Harmonic Pin=50mW - - -35 dBc
3fo3rd Harmonic - - -40 dBc
in Input VSWR - - 3:1 —
IGG Gate Current VDD=0V, VGG=5V, Pin=0W - 5 6 mA
IDD Leakage Current VDD=17V, VGG=0V, Pin=0W - - 1 mA
— Stability VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <65W (VGG control), Load VSWR=3:1 No parasitic oscillation
more than -65dBc —
— Load VSWR Tolerance VDD=15.2V, Pin=50mW,
Pout=60W (VGG control), Load VSWR=20:1 No degradation or
destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
3
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER and TOTAL EFFICIENCY,
versus FREQUENCY
0
10
20
30
40
50
60
70
80
90
100
360 370 380 390 400 410 420 430 440 450 460 470 480 490
Frequencyf(MHz)
Output Power Pout(W)
0
10
20
30
40
50
60
70
80
90
100
Total Efficiency ηt(%)
Pout
ηt
V
DD=12.5V
V
GG=5V
Pin=50mW
2nd, 3rd HARMONICS versus FREQUENCY
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
360 370 380 390 400 410 420 430 440 450 460 470 480 490
Frequencyf(MHz)
Harmonics(dBc)
2nd
3rd
V
DD=12.5V
V
GG=5V
Pin=50mW
INPUT VSWR versus FREQUENCY
1
2
3
4
5
6
7
360 370 380 390 400 410 420 430 440 450 460 470 480 490
Frequencyf(MHz)
Input VSWR ρin(-)
V
DD=12.5V
V
GG=5V
Pin=50mW
ρin
GATE CURRENT versus FREQUENCY
1
2
3
4
5
6
7
360 370 380 390 400 410 420 430 440 450 460 470 480 490
Frequencyf(MHz)
Gate Current IGG(mA)
V
DD=0V
V
GG=5V
Pin=0mW
IGG
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
4
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=378MHz
V
DD=12.5V
V
GG=5V
Gp
IDD
Pout
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=400MHz
V
DD=12.5V
V
GG=5V
Gp
IDD
Pout
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=430MHz
V
DD=12.5V
V
GG=5V
Gp
IDD
Pout
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=450MHz
V
DD=12.5V
V
GG=5V
Gp
IDD
Pout
OUTPUTPOWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
0
5
10
15
20
25
30
35
40
45
50
-10 -5 0 5 10 15 20
Input Power Pin(dBm)
Output Power Pout(dBm)
Power Gain Gp(dB)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=470MHz
V
DD=12.5V
V
GG=5V
Gp
IDD
Pout
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
5
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=378MHz
VGG=5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=400MHz
VGG=5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=430MHz
VGG=5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=450MHz
VGG=5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus DRAIN VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2 4 6 8 10 12 14
Drain Voltage VDD(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=470MHz
VGG=5V
Pin=50mW
IDD
Pout
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
6
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=378MHz
VDD=12.5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=400MHz
VDD=12.5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=430MHz
VDD=12.5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=450MHz
VDD=12.5V
Pin=50mW
IDD
Pout
OUTPUTPOWER and DRAIN CURRENT
versus GATE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate Voltage VGG(V)
Output Power Pout(W)
0
2
4
6
8
10
12
14
16
18
20
Drain Current IDD(A)
f=470MHz
VDD=12.5V
Pin=50mW
IDD
Pout
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
7
OUTLINE
3.1+0.6/-0.4
7.3±0.5
（9.9）
（2.6）
44±1
56±1
49.8±1
67±1
60±1
2-R2±0.5
19.4±1
15±1
17±1
12.5±1
10.7±1
②①
18±1
4±0.5
0.6±0.2
③ ④
(3.26)
1 RF Input (Pin )
2 Gate Voltage(VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
8
TEST BLOCK DIAGRAM
EQUIVALENT CIRCUIT
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
C1, C2: 4700pF, 22uF in parallel
DUT
V
ZG=50Ω
5
4
3
2
1
ZL=50 Ω
C1 C2
Directional
Coupler Attenuator Power
Meter
Spectrum
Analyzer
- +
DC Power
Supply GG
+ -
DC Power
Supply VDD
Attenuator
Pre-
amplifier
Power
Meter
Directional
Coupler
Attenuator
Signal
Generator
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
9
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Stage Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @T=40%
(A)
VDD
(V)
1st 0.05 3.4 2.57 1.5
2nd 3.4 60.0 0.45 10.5 12.5
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 3.4W + 0.05W) x 2.57°C/W = Tcase + 39.6 °C
Tch2 = Tcase + (12.5V x 10.5A – 60.0W + 3.4W) x 0.45°C/W = Tcase + 33.6 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout /T) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (60W/40% - 60W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 69.6 °C
Tch2 = Tair + 63.6 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
10
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG). When the gate voltage is close to zero, the nominal output signal (Pout=60W) is attenuated
up to 60 dB and only a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility
to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per normal
operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets,
please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for
critical communications elements. In the application, which is base station applications and fixed station applications
that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider
the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability
report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor.
3.RAseries products and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under
extreme conditions.
5.RAseries products are designed to operate into a nominal load impedance of 50. Under the condition of operating into
a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is
risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
<Silicon RF Power Modules >
RA60H3847M1
RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
11
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
PRELIMINARY or TENTATIVE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
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•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
