< Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum). At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. BLOCK DIAGRAM 2 3 1 4 5 FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW * Broadband Frequency Range: 378-470MHz * Metal shield structure that makes the improvements of spurious radiation simple * Low-Power Control Current IGG=5mA (typ) @ VGG=5V * Module Size: 67 x 19.4 x 9.9 mm * Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) RoHS COMPLIANCE * RA60H3847M1 is a RoHS compliant product. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER RA60H3847M1-101 SUPPLY FORM Antistatic tray, 10 modules/tray Publication Date :Apr.2011 1 PACKAGE CODE: H2M < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V, Pin=0W 17 V VGG Gate Voltage VDD<12.5V, Pin=50mW 6 V Pin Input Power 100 mW Pout Output Power 80 W -30 to +100 C -40 to +110 C MIN TYP MAX UNIT 378 - 470 MHz Tcase(OP) Operation Case Temperature Range f=378-470MHz, VGG5V Tstg Storage Temperature Range The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER F CONDITIONS Frequency Range Pout Output Power VDD=12.5V 60 - - W T Total Efficiency VGG=5V 40 - - % - - -35 dBc - - -40 dBc - - 3:1 -- 2fo nd 2 Harmonic rd Pin=50mW 3fo 3 Harmonic in Input VSWR IGG Gate Current VDD=0V, VGG=5V, Pin=0W - 5 6 mA IDD Leakage Current VDD=17V, VGG=0V, Pin=0W - - 1 mA -- Stability VDD=10.0-15.2V, Pin=25-70mW, 5 RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) 2nd, 3rd HARMONICS versus FREQUENCY 100 90 90 Pout 80 80 70 70 60 60 50 50 t -20 -25 Harmonics(dBc) 100 Total Efficiency t(%) Output Power Pout(W) OUTPUT POWER and TOTAL EFFICIENCY, versus FREQUENCY VGG=5V -35 Pin=50mW -40 -45 40 40 30 VDD=12.5V 30 20 VGG=5V Pin=50mW 20 -60 10 -65 0 -70 10 0 VDD=12.5V -30 -50 2nd -55 3 rd 360 370 380 390 400 410 420 430 440 450 460 470 480 490 360 370 380 390 400 410 420 430 440 450 460 470 480 490 Frequency f(MHz) Frequency f(MHz) INPUT VSWR versus FREQUENCY GATE CURRENT versus FREQUENCY 7 7 VDD=12.5V 6 6 VGG=5V Gate Current IGG(mA) Input VSWR in(-) Pin=50mW 5 4 3 in 2 5 IGG 4 VDD=0V 3 VGG=5V Pin=0mW 2 1 1 360 370 380 390 400 410 420 430 440 450 460 470 480 490 360 370 380 390 400 410 420 430 440 450 460 470 480 490 Frequency f(MHz) Frequency f(MHz) Publication Date :Apr.2011 3 < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) 50 20 50 20 Gp 45 16 40 16 35 14 35 14 30 12 30 12 25 10 25 10 Gp Pout 8 IDD 15 6 f=378MHz VDD=12.5V VGG=5V 10 5 4 0 -10 -5 0 5 10 15 20 5 0 0 20 4 2 0 -10 -5 0 5 10 15 20 Input Power Pin(dBm) OUTPUTPOWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER OUTPUTPOWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 20 50 45 18 45 40 16 40 16 35 14 35 14 30 12 30 12 25 10 25 10 Gp Pout 20 8 IDD 15 6 f=430MHz VDD=12.5V VGG=5V 10 5 4 0 -10 -5 0 5 10 15 Output Power Pout(dBm) Power Gain Gp(dB) 50 Drain Current IDD(A) Output Power Pout(dBm) Power Gain Gp(dB) 6 f=400MHz VDD=12.5V VGG=5V 10 Input Power Pin(dBm) 0 20 18 Pout 40 16 35 14 30 12 25 10 20 8 IDD 15 6 f=470MHz VDD=12.5V VGG=5V 10 5 Drain Current IDD(A) Gp 4 2 0 0 -10 -5 0 5 10 15 20 Input Power Pin(dBm) Publication Date :Apr.2011 4 4 2 0 -5 0 5 10 Input Power Pin(dBm) 50 6 f=450MHz VDD=12.5V VGG=5V -10 OUTPUTPOWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 45 8 IDD 10 0 18 Pout 15 5 20 20 Gp 20 2 Input Power Pin(dBm) Output Power Pout(dBm) Power Gain Gp(dB) 8 IDD 15 2 18 Pout 15 20 Drain Current IDD(A) 20 Output Power Pout(dBm) Power Gain Gp(dB) 18 40 Drain Current IDD(A) 45 Output Power Pout(dBm) Power Gain Gp(dB) OUTPUTPOWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Drain Current IDD(A) OUTPUTPOWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) OUTPUTPOWER and DRAIN CURRENT versus DRAIN VOLTAGE OUTPUTPOWER and DRAIN CURRENT versus DRAIN VOLTAGE 100 18 90 16 80 70 14 60 12 50 10 40 8 IDD 30 6 20 10 0 2 4 6 8 10 12 20 14 60 12 50 10 40 30 6 4 20 4 2 10 2 0 0 14 0 2 4 100 18 90 60 12 50 10 IDD 40 8 12 2 0 0 16 14 60 12 50 10 IDD 40 8 30 6 20 4 10 2 0 Drain Current IDD(A) Output Power Pout(W) 18 Pin=50mW 0 4 6 8 10 0 2 4 6 8 10 Drain Voltage VDD(V) Pout 12 10 IDD 4 70 2 12 50 10 20 80 60 20 OUTPUTPOWER and DRAIN CURRENT versus DRAIN VOLTAGE f=470MHz VGG=5V 14 2 14 100 16 Pin=50mW 70 4 Drain Voltage VDD(V) 90 18 Pout 6 10 0 20 8 20 10 14 30 6 8 12 40 30 6 10 f=450MHz VGG=5V 80 Output Power Pout(W) 16 Drain Current IDD(A) Output Power Pout(W) Pout 20 14 4 8 OUTPUTPOWER and DRAIN CURRENT versus DRAIN VOLTAGE 70 2 6 Drain Voltage VDD(V) 100 80 8 IDD OUTPUTPOWER and DRAIN CURRENT versus DRAIN VOLTAGE f=430MHz VGG=5V Pin=50mW 16 Pout 70 Drain Voltage VDD(V) 90 18 f=400MHz VGG=5V Pin=50mW Drain Current IDD(A) Output Power Pout(W) 80 Pout 20 14 Drain Voltage VDD(V) Publication Date :Apr.2011 5 12 14 Drain Current IDD(A) f=378MHz VGG=5V Pin=50mW Output Power Pout(W) 90 Drain Current IDD(A) 100 < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) OUTPUTPOWER and DRAIN CURRENT versus GATE VOLTAGE OUTPUTPOWER and DRAIN CURRENT versus GATE VOLTAGE 18 90 16 80 70 14 60 12 50 10 IDD 40 8 70 14 60 12 50 10 40 8 IDD 6 30 6 20 4 20 4 10 2 10 2 0 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 2.0 2.5 3.0 Gate Voltage VGG(V) 100 18 90 16 80 70 14 60 12 50 10 IDD 40 8 30 6 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Output Power Pout(W) 80 Pout 20 Drain Current IDD(A) f=430MHz VDD=12.5V Pin=50mW 0 0 0 2.0 40 8 30 6 20 4 10 2 Drain Current IDD(A) 10 0 0 5.0 10 2 16 IDD 4.5 12 IDD 50 4 12 4.0 60 10 60 3.5 14 20 18 3.0 16 70 2.5 3.0 3.5 4.0 4.5 Gate Voltage VGG(V) Pout 18 Pout 2 14 2.5 f=450MHz VDD=12.5V Pin=50mW 4 70 2.0 20 6 20 50 5.5 8 5.5 100 80 5.0 30 OUTPUTPOWER and DRAIN CURRENT versus GATE VOLTAGE f=470MHz VDD=12.5V Pin=50mW 4.5 40 Gate Voltage VGG(V) 90 4.0 OUTPUTPOWER and DRAIN CURRENT versus GATE VOLTAGE 100 90 3.5 Gate Voltage VGG(V) OUTPUTPOWER and DRAIN CURRENT versus GATE VOLTAGE Output Power Pout(W) 16 Pout 30 2.0 Output Power Pout(W) 18 f=400MHz VDD=12.5V Pin=50mW Drain Current IDD(A) Output Power Pout(W) Pout 20 5.5 Gate Voltage VGG(V) Publication Date :Apr.2011 6 5.0 5.5 Drain Current IDD(A) f=378MHz VDD=12.5V Pin=50mW 80 100 Output Power Pout(W) 90 20 Drain Current IDD(A) 100 < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO OUTLINE 671 181 10.71 151 40.5 49.81 2-R20.5 19.41 (3.26) 601 12.51 0.60.2 171 441 2.6 9.9 3.1+0.6/-0.4 7.30.5 561 Publication Date :Apr.2011 7 1 RF Input (Pin ) 2 Gate Voltage(VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TEST BLOCK DIAGRAM Power Meter 1 Signal Generator Attenuator Preamplifier 2 3 4 Z L =50 Z G =50 Attenuator Spectrum Analyzer 5 DUT Directional Coupler Directional Coupler C1 C2 + DC Power Supply V GG C1, C2: 4700pF, 22uF in parallel EQUIVALENT CIRCUIT Publication Date :Apr.2011 8 Attenuator + DC Power Supply V DD 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) Power Meter < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pin Pout Rth(ch-case) IDD @ T=40% VDD (W) (W) (C/W) (A) (V) st 0.05 3.4 2.57 1.5 nd 3.4 60.0 0.45 10.5 Stage 1 2 12.5 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 1.5A - 3.4W + 0.05W) x 2.57C/W = Tcase + 39.6 C Tch2 = Tcase + (12.5V x 10.5A - 60.0W + 3.4W) x 0.45C/W = Tcase + 33.6 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (60W/40% - 60W + 0.05W) = 0.33 C/W When mounting the module with the thermal resistance of 0.33 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 69.6 C Tch2 = Tair + 63.6 C The 175C maximum rating for the channel temperature ensures application under derated conditions. Publication Date :Apr.2011 9 < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO Output Power Control: Depending on linearity, the following three methods are recommended to control the output power: a) Non-linear FM modulation at high power operating: By the gate voltage(VGG). When the gate voltage is close to zero, the nominal output signal (Pout=60W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=0V(minimum), the output power and drain current increases substantially. Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? ATTENTION: 1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3.RA series products and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions. 5.RA series products are designed to operate into a nominal load impedance of 50. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module. 6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it's original form. 9.For additional "Safety first" in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date :Apr.2011 10 < Silicon RF Power Modules > PRELIMINARY or TENTATIVE RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. *Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. (c) 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date :Apr.2011 11