For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
General Description
Features
Functional Diagram
The HMC464LP5 & HMC464LP5E are GaAs MMIC
PHEMT Distributed Power Ampli ers in leadless 5 x
5 mm surface mount packages which operate bet-
ween 2 and 20 GHz. The ampli er provides 14 dB
of gain, +30 dBm output IP3 and +26 dBm of output
power at 1 dB gain compression while requiring
290 mA from a +8V supply. Gain  atness is good
from 2 - 18 GHz making the HMC464LP5(E) ideal for
EW, ECM and radar driver ampli ers as well as test
equipment applications. The wideband ampli er I/O’s
are internally matched to 50 Ohms.
P1dB Output Power: +26 dBm
Gain: 14 dB
Output IP3: +30 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
25 mm2 Leadless SMT Package
Typical Applications
The HMC464LP5 / HMC464LP5E is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C3I
• Test Instrumentation
• Fiber Optics
Electrical Speci cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA [1]
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 2.0 - 6.0 6.0 - 16.0 16.0 - 20.0 GHz
Gain 12 14 11.5 13.5 8 11 dB
Gain Flatness ±0.5 ±0.5 ±1.0 dB
Gain Variation Over Temperature 0.025 0.035 0.03 0.04 0.05 0.06 dB/ °C
Input Return Loss 15 10 7 dB
Output Return Loss 15 9 11 dB
Output Power for 1 dB Compression
(P1dB) 23.5 26.5 22 25 18 21 dBm
Saturated Output Power (Psat) 27.5 26 24.0 dBm
Output Third Order Intercept (IP3) 32 26 22 dBm
Noise Figure 4.0 4.0 6.0 dB
Supply Current
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA
[1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0 2 4 6 8 10 12 14 16 18 20 22
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 260
LINEAR & POWER AMPLIFIERS - SMT
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Output IP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +9 Vdc
Gate Bias Voltage (Vgg1) -2 to 0 Vdc
Gate Bias Voltage (Vgg2) (Vdd -8.0) Vdc to Vdd
RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm
Channel Temperature 150 °C
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C) 3.35 W
Thermal Resistance
(channel to ground paddle) 19.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
Vdd (V) Idd (mA)
+7.5 292
+8.0 290
+8.5 288
Typical Supply Current vs. Vdd
10
12
14
16
18
20
22
24
26
28
30
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
32
34
36
0 2 4 6 8 10 12 14 16 18 20 22
+25C
+85C
-40C
IP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
7.5 8 8.5
Gain
P1dB
Psat
IP3
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm
)
Vdd (V)
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC464LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H464
XXXX
HMC464LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H464
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 262
LINEAR & POWER AMPLIFIERS - SMT
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
Pin Number Function Description Interface Schematic
5 RFIN This pin is AC coupled
and matched to 50 Ohms.
15 Vgg1 Gate Control for ampli er. Adjust between -2 to 0V
to achieve Idd= 290 mA.
21 RFOUT & Vdd
RF output for ampli er. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
30 Vgg2 Control voltage for ampli er. +3V should be applied to
Vgg2 for nominal operation.
Ground Paddle GND Ground paddle must be connected to RF/DC ground.
1 - 4, 6 - 14,
16 - 20, 22 - 29,
31, 32
N/C No connection. These pins may be connected to RF ground.
Performance will not be affected.
Pin Descriptions
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 263
Evaluation PCB
The circuit board used in the  nal application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 108344 [1]
Item Description
J1, J2 PCB Mount SMA Connector
J3, J4 2 mm Molex Header
C1, C2 100 pF Capacitor, 0402 Pkg.
C3, C4 1000 pF Capacitor, 0603 Pkg.
C5, C6 4.7 μF Capacitor, Tantalum
U1 HMC464LP5 / HMC464LP5E
PCB [2] 109762 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
v03.0308