BAV19WS...BAV21WS BAV19WS...BAV21WS Surface Mount Small Signal Diodes Kleinsignal-Dioden fur die Oberflachenmontage Version 2011-09-27 0.1 Type Code 1.25 0.3 0.1 10.1 1.70.1 2.50.2 Dimensions - Mae [mm] Power dissipation - Verlustleistung 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 120...250 V Plastic case - Kunststoffgehause ~ SOD-323 Weight approx. - Gewicht ca. 0.005 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25 C) Grenzwerte (TA = 25 C) BAV19WS, BAV20WS, BAV21WS Power dissipation - Verlustleistung Ptot 200 mW 1) Max. average forward current - Dauergrenzstrom (dc) IFAV 200 mA 1) Repetitive peak forward current - Periodischer Spitzenstrom IFRM 625 mA 1) Non repetitive peak forward surge current Stostrom-Grenzwert tp 1 s tp 1 s IFSM IFSM 0.5 A 2.5 A Repetitive peak reverse voltage Periodische Spitzensperrspannung BAV19WS BAV20WS BAV21WS VRRM VRRM VRRM 120 V 200 V 250 V Continuous reverse voltage Sperrspannung BAV19WS BAV20WS BAV21WS VR VR VR 100 V 150 V 200 V Junction temperature - Sperrschichttemperatur Tj +150 C Storage temperature - Lagerungstemperatur TS - 55...+150 C 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss (c) Diotec Semiconductor AG http://www.diotec.com 1 BAV19WS...BAV21WS Characteristics (Tj = 25 C) Kennwerte (Tj = 25 C) Forward voltage ) Durchlass-Spannung IF = 100 mA IF = 200 mA VF VF <1V < 1.25 V VR = 100 V VR = 150 V VR = 200 V IR < 100 nA Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz CT < 5 pF Reverse recovery time - Sperrverzug IF = 30 mA uber/ through IR = 30 mA bis / to IR = 1 mA trr < 50 ns 1 Leakage current 1) Sperrstrom BAV19WS BAV20WS BAV21WS Tj = 25 C Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Marking - Stempelung RthA < 625 K/W BAV19WS BAV20WS BAV21WS 2 WO 1 120 [%] [A] 100 10 -1 80 Tj = 125C 10 -2 60 40 Tj = 25C 10-3 20 IF Ptot 0 0 TA 50 100 150 [C] 10-4 Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 2 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Tested with pulses tp = 300 s, duty cycles 2 % gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2 % Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com (c) Diotec Semiconductor AG