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MHW1345N
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RF Device Data
Freescale Semiconductor
General Purpose Linear
Amplifier Module
Features
•34.5 dB Typical Gain @ 100 MHz
•Silicon Bipolar Technology
•Class A Operation
•Typical ITO = +44 dBm @ 200 MHz
•Unconditionally Stable Under All Load Conditions
Applications
•Driver Amplifier in 50 Ohm Systems Requiring High Linearity
•Instrumentation Amplifiers
•Return Path Amplifier on CATV Systems Operating in the 10 to 200 MHz
Frequency Range
•Possible Replacement for CA2830C
Description
•24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module
•Replaced MHW1345. There are no form, fit or function changes with this
part replacement.
•RoHS Compliant
Table 1. Maximum Ratings
Rating Symbol Value Unit
DC Supply Voltage VCC 28 Vdc
RF Power Input Pin +5 dBm
Operating Case Temperature Range TC- 20 to +100 °C
Storage Temperature Range Tstg - 40 to +100 °C
Table 2. Electrical Characteristics (TC = 25°C, VCC = 24 V, 50 Ω system unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Frequency Range BW 10 — 200 MHz
Gain Flatness (f = 10 - 200 MHz) GF—±0.5 ±1 dB
Power Gain (f = 100 MHz) Gp33.5 34.5 35.5 dB
Noise Figure, Broadband (f = 200 MHz) NF — 3.8 4.5 dB
Power Output — 1 dB Compression
(f = 10 - 200 MHz)
P1dB 630 800 — mW
Power Output — 1 dB Compression
(f = 10 - 200 MHz, VCC = 28 V)
P1dB 1000 1260 — mW
Third Order Intercept (See Figure 2, f1 = 200 MHz) ITO 43 44 — dBm
Input/Output VSWR (f = 10 - 200 MHz) VSWR — 1.5:1 2:1 —
Second Harmonic Distortion
(Tone at 100 mW, f2H = 150 MHz)
dso —-60 -50 dB
Peak Envelope Power
(Two Tone Distortion Test — See Figure 2)
(f = 10 - 200 MHz @ - 32 dB IMD)
PEP 600 800 — mW
Supply Current ICC 270 310 330 mA
Document Number: MHW1345N
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
MHW1345N
10- 200 MHz
34.5 dB
800 mW
GENERAL PURPOSE
LINEAR AMPLIFIER MODULE
CASE 1302-01, STYLE 1
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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RF Device Data
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MHW1345N
Table 3. S-Parameters (Biased at 24 Volts, T = 25°C Zo = 50Ω)
Frequency
S11 S21 S12 S22
Frequency
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
10 -19.3 45.5 34.6 -0.6 -47.0 2.3 -14.5 76.8
50 -15.6 35.0 34.2 -56.7 -47.5 -30.3 -12.6 45.0
100 -13.2 34.4 33.9 -114 - 47.9 -62.9 -10.8 10.7
200 - 11.1 30.1 33.5 134 -48.3 -128 -14.9 -42.6
Magnitude in dB, Phase Angle in degrees.
Figure 1. External Connections Figure 2. Intermodulation Test
f12f2−f1
f2
PO
PEP = 4X PO @ IMD = − 32dB
IMD
ITO +PO)IMD
2@IMDu60dB
PIN CONFIGURATION
12 89734 56
OUTPUT
0.01 µF
INPUT
VCC
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RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 1302- 01
ISSUE E
2
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. GROUND
4. DELETED
5. VDC
6. DELETED
7. GROUND
8. GROUND
9. RF OUTPUT
1589
J
B
S
R
V
Q2X
M
F
M
0.010 A M
T
M
A
M
0.020 T
N
G
U
C
L
M
A
M
0.010 Z T
M
A
M
0.010 Z T
6−32UNC−2B2X
W
P
K
37
X
A
F
F
A
Z
Y2X
2X
D7X4X
E
E
TX
Z
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
X
DIM
A
MIN MAX MIN MAX
MILLIMETERS
− − − 1.775 − − − 45.085
INCHES
B− − − 1.085 − − − 27.559
C− − − 0.840 − − − 21.336
D0.015 0.021 0.381 0.533
E0.465 0.510 11.811 12.954
F0.300 0.325 7.62 8.255
G
J
K0.315 0.355 8.001 9.017
L
N
P
Q0.148 0.168 3.759 4.267
R− − − 0.600 − − − 15.24
S
U
V− − − 0.250 − − − 6.350
W0.435 − − − 11.049 − − −
X
Y0.152 0.163 3.861 4.140
Z0.009 0.011 0.229 0.279
0.100 BSC
0.156 BSC
0.400 BSC
1.000 BSC
0.165 BSC
0.100 BSC
1.500 BSC
0.200 BSC
2.540 BSC
3.962 BSC
10.160 BSC
25.400 BSC
4.191 BSC
2.540 BSC
38.100 BSC
5.080 BSC
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RF Device Data
Freescale Semiconductor
MHW1345N
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Document Number: MHW1345N
Rev. 3, 5/2006
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