SI4420DYTRPBF - International Rectifier

Parameter Max. Units

VDS Drain- Source Voltage 30 V

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±12.5

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±10 A

IDM Pulsed Drain Current ±50

PD @TA = 25°C Power Dissipation 2.5

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

EAS Single Pulse Avalanche Energy400 mJ

VGS Gate-to-Source Voltage ± 20 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

lN-Channel MOSFET

lLow On-Resistance

lLow Gate Charge

lSurface Mount

lLogic Level Drive

lLead-Free

8/11/04

Si4420DYPbF

HEXFET® Power MOSFET

Parameter Max. Units

RθJA Maximum Junction-to-Ambient50 °C/W

Thermal Resistance

This N-channel HEXFET® power MOSFET is produced

using International Rectifier's advanced HEXFET power

MOSFET technology. The low on-resistance and low gate

charge inherent to this technology make this device ideal

for low voltage or battery driven power conversion

applications

The SO-8 package with copper leadframe offers enhanced

thermal characteristics that allow power dissipation of

greater that 800mW in typical board mount applications.

VDSS = 30V

RDS(on) = 0.009Ω

Description

Top View

Absolute Maximum Ratings

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PD - 95729

SO-8

Si4420DYPbF

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Diode Conduction) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V 

trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 2.3A

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

 

  50

2.3

 When mounted on FR4 Board, t ≤10 sec

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.009 VGS = 10V, I D = 12.5A 

––– ––– 0.013 VGS = 4.5V, ID = 10.5A 

VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA

gfs Forward Transconductance ––– 29 ––– S VDS = 15V, ID = 12.5A

––– ––– 1.0 VDS = 30V, VGS = 0V

––– ––– 5.0 VDS = 30V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge –– – 52 78 ID = 12.5A

Qgs Gate-to-Source Charge – –– 8.7 ––– nC VDS = 15V

Qgd Gate-to-Drain ("Miller") Charge ––– 12 ––– VGS = 10V, See Fig. 6 

td(on) Turn-On Delay Time ––– 15 ––– VDD = 15V

trRise Time ––– 10 ––– ID = 1.0A

td(off) Turn-Off Delay Time ––– 55 ––– RG = 6.0Ω

tfFall Time ––– 47 ––– RD = 15Ω, 

Ciss Input Capacitance ––– 2240 ––– VGS = 0V

Coss Output Capacitance ––– 1100 ––– pF VDS = 15V

Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

 Starting TJ = 25°C, L = 13mH

RG = 25Ω, IAS = 8.9A. (See Figure 15)

Si4420DYPbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

4.0 5.0 6.0 7.0 8.0 9.0

VGS, Gate-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (Α)

TJ = 25° C

TJ = 150° C

VDS = 25V

20µs PULSE WIDTH

TJ = - 55° C

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C )

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

12.5A

100

1000

0.1 1 10 100

20µs PU LSE WIDT H

T = 25 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

Si4420DYPbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

020 40 60 80 100

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

12.5A

V = 15V

V = 24V

1 10 100

1000

2000

3000

4000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1M Hz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

100

1000

0.0 1.0 2.0 3.0 4.0 5.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

100

1000

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 150 C

= 25 C

°°

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

Si4420DYPbF

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Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150

T , Case Temperature ( C)

I , Drain Current (A)

Fig 10. Typical Power Vs. Time

100

0.01 0.1 1 10 100

Power ( W)

Time (sec)

0.01

0.1

100

0.0001 0.001 0.01 0.1 1 10 10

Notes:

1. D u ty fa c to r D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Si4420DYPbF

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Fig 12. Typical On-Resistance Vs. Drain

Current Fig 13. Typical On-Resistance Vs. Gate

Voltage

0.00

0.04

0.08

0.12

0.16

0.20

01020304050

I , Drain Current (A)

R , Dr ain-to-Sou rce On Resistance

DS(on)

(Ω)

V = 10V

V = 4.5V

Fig 14. Typical Threshold Voltage Vs.Temperature Fig 15. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

4.0A

7.1A

8.9A

-60 -20 20 60 100 140 180

TJ , Tem perature ( °C)

1.0

1.5

2.0

2.5

3.0

VGS(th) , Variace (V)

ID = 250µA

4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate - to -Sour ce Voltage (V)

0.006

0.008

0.010

0.012

RDS(on), Drain-to -Source On Resistance (Ω)

ID = 12.5A

Si4420DYPbF

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX MILLIMETERSINCHES MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

e1 A

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUT LINE CONFORMS TO JEDEC OUTLINE MS -012AA.

NOTES:

1. DIMEN SIONING & TOLERANCING PER ASME Y1 4.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010 ].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070

]

DATE CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAST DIGIT OF THE YE AR

PART N UMBER

LOT CODE

WW = WEEK

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

P = DE S IGNAT ES L E AD-F REE

PRODUCT (OPTION AL)

A = ASSEMBLY SITE CODE

Si4420DYPbF

8www.irf.com

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DI M EN S IO N : MIL LIM ET E R .

2. OUTLIN E CONFORMS TO EIA-481 & EI A -541.

FEED DIRECTI ON

TERMI NAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES:

. CONTROLLING DIMENSION : MILLIMETER.

. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

. OUTLINE CONFOR MS T O EIA -481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/04