© 2006 IXYS All rights reserved 1 - 4
0644
IXDR 30N120 D1
IXDR 30N120
IXYS reserves the right to change limits, test conditions and dimensions
Features
•NPT IGBT technology
- high switching speed
- low switching losses
- square RBSOA, no latch up
- high short circuit capability
- positive temperature coefficient for
easy paralleling
- MOS input, voltage controlled
- fast recovery epitaxial diode
•Epoxy meets UL 94V-0
•Isolated and UL registered E153432
Advantages
•DCB Isolated mounting tab
• Meets TO-247AD package Outline
• Package for clip or spring mounting
• Space savings
• High power density
Typical Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninteruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability
Square RBSOA
Symbol Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C; RGE = 20 kΩ1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 50 A
IC90 TC = 90°C 30 A
ICM TC = 90°C, tp = 1 ms 60 A
RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 Ω ICM = 50 A
Clamped inductive load, L = 30 mH VCEK < VCES
tSC VGE = ±15 V, VCE = VCES, TJ = 125°C 10 µs
(SCSOA) RG = 47 Ω, non repetitive
PCTC = 25°C IGBT 200 W
Diode 95 W
TJ-55 ... +150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS IISOL < 1 mA 2500 V~
Weight 6g
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES VGE = 0 V 1200 V
VGE(th) IC = 1 mA, VCE = VGE 4.5 6.5 V
ICES VCE = VCES,T
J = 25°C 1.5 mA
TJ = 125°C 2.5 mA
IGES VCE = 0 V, VGE = ± 20 V ± 500 nA
VCE(sat) IC = 30 A, VGE = 15 V 2.4 2.9 V
VCES = 1200 V
IC25 =50A
VCE(sat) typ = 2.4 V
G
C
E
IXDR 30N120 IXDR 30N120 D1
E
C
G
G = Gate C = Collector E = Emitter
Isolated Backside*
ISOPLUS 247TM
E153432
G
C
E
© 2006 IXYS All rights reserved 2 - 4
0644
IXDR 30N120 D1
IXDR 30N120
IXYS reserves the right to change limits, test conditions and dimensions
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 1650 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 250 pF
Cres 110 pF
QgIC = 30 A, VGE = 15 V, VCE = 0.5 VCES 120 nC
td(on) 100 ns
tr70 ns
td(off) 500 ns
tf70 ns
Eon 4.6 mJ
Eoff 3.4 mJ
RthJC 0.6 K/W
RthCH Package with heatsink compound 0.25 K/W
Inductive load, TJ = 125°C
IC = 30 A, VGE = ±15 V,
VCE = 600 V, RG = 47 Ω
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
VFIF = 30 A, VGE = 0 V 2.5 2.75 V
IF = 30 A, VGE = 0 V, TJ = 125°C 2.0 V
IFTC = 25°C 50 A
TC = 90°C 27 A
IRM IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V 20 A
trr VGE = 0 V, TJ = 125°C 200 ns
trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
RthJC 1.3 K/W
ISOPLUS247TM OUTLINE
The convex bow of substrate is typ. < 0.04 mm over plastic surface level
of device bottom side
This drawing will meet all dimensions requirement of JEDEC outline
TO-247 AD except screw hole and except Lmax.
© 2006 IXYS All rights reserved 3 - 4
0644
IXDR 30N120 D1
IXDR 30N120
IXYS reserves the right to change limits, test conditions and dimensions
0 200 400 600 800 1000
0
20
40
60
0
100
200
300
01234
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
10
20
30
40
50
60
13V
11V
TJ = 25°C VGE=17V
TJ = 125°C
VCE = 600V
IC = 25A
15V
567891011
0
10
20
30
40
50
60
13V
11V
VGE=17V
15V
VCE = 20V
TJ = 25°C
9V
9V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
A
IF
nC
QG-di/dt
V
VGE
A
IRM trr
ns
A/μs
IXDH/..R30N120
TJ = 125°C
VR = 600V
IF = 30A
TJ = 25°C
TJ = 125°C
IRM
trr
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2006 IXYS All rights reserved 4 - 4
0644
IXDR 30N120 D1
IXDR 30N120
IXYS reserves the right to change limits, test conditions and dimensions
0 1020304050
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
140
0 1020304050
0
1
2
3
4
5
6
0
100
200
300
400
500
600
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
10
0 40 80 120 160 200 240
0
1
2
3
4
5
0
300
600
900
1200
1500
0 40 80 120 160 200 240
0
2
4
6
8
10
12
0
60
120
180
240
single pulse
VCE = 600V
VGE = ±15V
RG = 47Ω
TJ = 125°C
IXDR30N120
VCE = 600V
VGE = ±15V
IC = 25A
TJ = 125°C
0 200 400 600 800 1000 1200
0
10
20
30
40
50
60
RG = 47Ω
TJ = 125°C
VCEK < VCES
VCE = 600V
VGE = ±15V
RG = 47Ω
TJ = 125°C
Eon
VCE = 600V
VGE = ±15V
IC = 25A
TJ = 125°C
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
A
IC
A
Eoff
Eon tt
RG
Ω
RG
Ω
VCE t
s
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
