Data Sheet 1 of 11 Rev. 02.1, 2009-02-20
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs
designed for WiMAX power amplifier applications in the 2500 to
2700 MHz band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA260851E
Package H-30248-2
Thermally-Enhanced High Power RF LDMOS FET
85 W, 2500 – 2700 MHz
WiMAX
EVM and Efficiency vs. Output Power
VDS = 28 V, IDQ = 900 mA
0
5
10
15
20
25
15 20 25 30 35 40 45
Output Power (dBm)
Efficiency (%)
-45
-40
-35
-30
-25
-20
EVM (dBc)
2.62
GHz
2.68
GHz
2.62
Efficiency
EVM
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —14 —dB
Drain Efficiency ηD—22 —%
Error Vector Magnitude EVM —–29 —dB
Features
•Thermally-enhanced, Pb-free and RoHS-compli-
ant packages
•Broadband internal matching
•Typical WiMAX performance at 2680 MHz, 28 V
- Average output power = 16 W
- Linear Gain = 14 dB
- Efficiency = 22%
- Error Vector Magnitude = –29 dB
•Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 100 W
- Efficiency = 47%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
85 W (CW) output power
*See Infineon distributor for future availability.
PTFA260851F
Package H-31248-2
Data Sheet 2 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 85 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 13 14 —dB
Drain Efficiency ηD33 36 —%
Intermodulation Distortion 46.5 dBm (PEP) IMD —–30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.095 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD437.5 W
Above 25°C derate by 2.5 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 85 W CW) RθJC 0.4 °C/W
Ordering Information
Type and Version Package Type Package Description Marking
PTFA260851E V1 H-30248-2 Thermally-enhanced slotted flange, single-ended PTFA260851E
PTFA260851F V1 H-31248-2 Thermally-enhanced earless flange, single-ended PTFA260851F
*See Infineon distributor for future availability.
Data Sheet 3 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 900 mA, ƒ = 2.68 GHz
10
11
12
13
14
15
16
25 30 35 40 45 50 55
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
Drain Efficiency (%)
Efficiency
Gain
Typical Performance (data taken in a production test fixture)
Two–tone Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 42.5 W
-30
-20
-10
0
10
20
2590 2610 2630 2650 2670 2690 2710
Frequency (MHz)
Gain (dB), Return Loss (dB)
0
5
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
Efficiency
Gain
Input Return Loss
Two–tone Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 42.5 W
-60
-50
-40
-30
-20
2580 2600 2620 2640 2660 2680 2700 2720
Frequency (MHz)
Intermodulation Distortion (dBc)
5th
3rd Order
7th
Two–tone Performance, various voltages
IDQ = 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
25 30 35 40 45 50
Output Power (dBm)
IM3, 5, 7 (dBc)
IM7
IM3
IM5
VDD = 26 V
VDD = 28 V
VDD = 32 V
Data Sheet 4 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
various voltages
IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
0
10
20
30
40
25 30 35 40 45
Output Power (dBm)
Drain Efficiency (%)
12
13
14
15
16
Gain (dB)
Efficiency
Gain
VDD = 26 V
VDD = 28 V
VDD = 32 V
3-Carrier CDMA2000 Performance
Adjacent Channel Power Ratio
VDD = 28 V, IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 7 dB
-80
-70
-60
-50
-40
-30
25 30 35 40 45 50
Output Power (dBm)
ACPR (dBc)
Alt1 2.5 MHz
Adj 35 MHz
Alt2 2.5 MHz
3-Carrier CDMA2000 Performance,
various voltages
IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 7 dB
0
10
20
30
40
30 35 40 45 50
Output Power (dBm)
Drain Efficiency (%)
12
13
14
15
16
Gain (dB)
Efficiency
Gain
VDD = 26 V
VDD = 28 V
VDD = 32 V
Two–tone Performance, various voltages
IDQ = 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz
12
13
14
15
16
17
25 30 35 40 45 50
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
Gain
Efficiency
VDD = 26 V
VDD = 28 V
VDD = 32 V
Typical Performance (cont.)
Data Sheet 5 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
WCDMA 3GPP 2-carrier Performance,
various voltages
IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB,
10 MHz spacing
-55
-50
-45
-40
-35
-30
25 30 35 40 45
Output Power (dBm)
ACPR (dBc), IM3U (dB)
26 V
28 V
32 V
ACPR
IMD 3
Typical Performance (cont.)
WCDMA 3GPP Single-carrier Performance
IDQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
-55
-50
-45
-40
-35
-30
25 30 35 40 45 50
Output Power (dBm)
Intermodulation Distortion (dBc)
28 V
32 V
26 V
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.19 A
0.56 A
0.93 A
1.39 A
2.78 A
4.17 A
5.56 A
6.95 A
8.34 A
WCDMA 3GPP 2-carrier Performance
VDD = 28 V & 32 V, IDQ
= 900 mA, ƒ = 2.68 GHz,
PAR = 8 dB, 10 MHz spacing
0
10
20
30
40
25 30 35 40 45
Output Power (dBm)
Drain Efficiency (%)
12
13
14
15
16
Gain (dB)
Efficiency
Gain
VDD = 28 V
VDD = 32 V
Data Sheet 6 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2600 4.4 3.8 1.8 2.5
2620 4.4 3.9 1.8 2.7
2650 4.3 4.2 1.7 2.9
2680 4.2 4.5 1.7 3.2
2700 4.2 4.7 1.6 3.3
0.1
0.3
0.5
0.2
0.4
0.1
0.2
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
T
O
W
AR
D
L
OA
D
-
0
.0
2700 MHz
2600 MHz
2600 MHz
Z Load
Z Source
2700 MHz
Z0 = 50 Ω
See next page for circuit information
Data Sheet 7 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 2650 MHz
Circuit Assembly Information
DUT PTFA260851E or PTFA260851F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper
Microstrip Electrical Characteristics at 2650 MHz1Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.121 λ, 46.9 Ω7.42 x 1.52 0.292 x 0.060
l20.135 λ, 40.5 Ω8.20 x 1.93 0.323 x 0.076
l30.021 λ, 40.5 Ω1.27 x 1.93 0.050 x 0.076
l40.028 λ, 14.7 Ω1.60 x 7.54 0.063 x 0.297
l50.079 λ, 8.3 Ω4.37 x 14.66 0.172 x 0.577
l60.008 λ, 57.9 Ω0.51 x 1.04 0.020 x 0.041
l70.272 λ, 57.9 Ω16.79 x 1.04 0.661 x 0.041
l80.278 λ, 49.3 Ω16.89 x 1.40 0.665 x 0.055
l90.278 λ, 49.3 Ω16.89 x 1.40 0.665 x 0.055
l10 0.060 λ, 5.2 Ω3.28 x 24.36 0.129 x 0.959
l11 (taper) 0.113 λ, 5.2 Ω / 49.3 Ω6.73 x 24.36 / 1.40 0.265 x 0.959 / 0.055
l12 0.048 λ, 49.3 Ω2.97 x 1.40 0.117 x 0.055
l13 0.095 λ, 49.3 Ω5.84 x 1.40 0.230 x 0.055
l14 0.070 λ, 49.3 Ω4.29 x 1.40 0.169 x 0.055
1Electrical characteristics are rounded.
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
VDD
R5
5.1K V
R4
2K V
R1
1.2K V
C7
4.5pF
l1
DUT
C5
0.01µF
C4
10µF
35V
C6
4.5pF
R7
5.1K V
R6
10 V
C8
1.5pF
l2l4l5
l8
l9
VDD
L2
C9
4.5pF
C10
1µF
C12
10µF
50V
C18
4.5pF
C14
1µF
C16
10µF
50V
C17
0.1pF
l12 l13 l14l11
C11
0.01µF
C15
0.01µF
l10
C13
4.5pF
L1
l6
R8
10 V
l7
RF_OUT
RF_IN
a260851ef_bd_2-1-08
C1
0.001µF
l3
Data Sheet 8 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C11, C15 Capacitor, 0.01 µF ATC 200B 103
C6, C7, C9, C13, Ceramic capacitor, 4.5 pF ATC 100B 4R5
C18
C8 Ceramic capacitor, 1.5 pF ATC 100B 1R5
C10, C14 Capacitor, 1 µF ATC 920C105
C12, C16 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C17 Ceramic capacitor, 0.1 pF ATC 100A 0R1
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R6, R8 Chip resistor 10 ohms Digi-Key P10ECT-ND
*Gerber Files for this circuit available on request
a260851ef_cd_1-3-08
RF_IN RF_OUT
LM
R4
Q1
QQ1
C3
C1
R2
C2
R1
R5 R3
C5
R8
C7
C12
C11
C15
R6 R7
C9
C10C4
C6
C8
L1
L2
C16
C18
C14
C13
C17 VDD
VDD
VDD
Data Sheet 9 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-30248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
C
L
34.04
[1.340]
19.81±0.20
[.780±.008]
1.02
[.040]
19.43 ±0.51
[.765±.020]
(45° X 2.72
[.107])
2X 12.70
[.500]
4.83±0.51
[.190±.020]
27.94
[1.100]
4X R1.52
[R.060]
2X R1.63
[R.064]
D
G
S
FLANGE 9.78
[.385]
0.0381 [.0015] -A-
248-cases: h-30248-2_po_9-F-08
C
L
C
L
3.61±0.38
[.142±.015]
SPH 1.57
[.062]
[.370 ]
+.004
–.006
LID 9.40+0.10
–0.15
Data Sheet 10 of 11 Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-31248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
C
L
0.0381 [.0015]
2X 12.70
[.500]
19.43±0.51
[.765±.020]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
FLANGE 9.78
[.385]
S
G
D
( 45° X 2.72
[.107])
20.57
[.810]
-A-
3.61±0.38
[.142±.015]
1.02
[.040]
2X 4.83±0.51
[.190±.020]
248-cases: h-31248-2_po
C
L
C
L
[R.020 ]
+.015
–.005
4X R0.508+0.381
–0.127
LID 9.40+0.10
–0.15
[.370 ]
+.004
–.006
Data Sheet 11 of 11 Rev. 02.1, 2009-02-20
PTFA260851E/F
Confidential, Limited Internal Distribution
Revision History: 2009-02-20 Data Sheet
Previous Version: 2006-07-21, Preliminary Data Sheet
Page Subjects (major changes since last revision)
6, 7 Add impedance and circuit information.
1Increase bandwidth from 2620 – 2680 to 2500 – 2700.
8Fixed typing error
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
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