SFH 325
SFH 325 FA
NPN-Silizium-Fototransistor im SMT SIDELED®-Gehäuse
Silicon NPN Phototransistor in SMT SIDELED®-Package
Lead (Pb) Free Product - RoHS Compliant
SFH 325
SFH 325 FA
gemäß OS-PCN-2012-008-A/ according to OS-PCN-2012-008-A
2013-01-16 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 450 nm bis 1120 nm (SFH 325) und bei
750 nm bis 1120 nm (SFH 325 FA)
• Hohe Linearität
• P-LCC-2 Gehäuse
• Gruppiert lieferbar
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
Fotostrom , (Ee=0,1mW/cm2,=950nm VCE = 5 V)
Photocurrent
Ipce (A)
SFH 3251)
1) Gruppierung erfolgt in Halbgruppen (siehe Seite 4), Verpackungseinheit = nur eine Halbgruppe / binning in half
groups (see page 4), packing unit = only one half group
Q65110A2486 > 16
SFH 325-31) Q65110A2488 25-50
SFH 325-3/-41) Q65110A2491 25-80
SFH 325-41) Q65110A2484 40-80
SFH 325 FA1) Q65110A2487 > 16
SFH 325 FA-31) Q65110A2482 25-50
SFH 325 FA-3/-41) Q65110A2490 25-80
SFH 325 FA-41) Q65110A2485 40-80
Features
• Especially suitable for applications from
450 nm to 1120 nm (SFH 325) and from
750 nm to 1120 nm (SFH 325 FA)
• High linearity
• P-LCC-2 package
• Available in groups
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
2013-01-16 2
SFH 325, SFH 325 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 … + 100 C
Kollektor-Emitterspannung
Collector-emitter voltage
VCE 35 V
Kollektorstrom
Collector current
IC15 mA
Kollektorspitzenstrom, 10s
Collector surge current
ICS 75 mA
Verlustleistung, TA = 25 C
Total power dissipation
Ptot 165 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb
RthJA 450 K/W
SFH 325, SFH 325 FA
2013-01-16 3
Kennwerte (TA = 25 C, = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
SFH 325 SFH 325 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max 980 980 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
450 … 1120 750 … 1120 nm
Bestrahlungsempfindliche Fläche220m)
Radiant sensitive area
A0.038 0.038 mm2
Abmessung der Chipfläche
Dimensions of chip area
L B
L W0.45 0.45 0.45 0.45 mm mm
Halbwinkel
Half angle
60 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E = 0
Capacitance
CCE 5.0 5.0 pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 1 (50) 1 (50) nA
2013-01-16 4
SFH 325, SFH 325 FA
Directional Characteristics Srel = f ()
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
-2A -2B -3A -3B -4A -4B
Fotostrom, 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
SFH 325:
Ev = 1000 Ix,
Normlicht/standard light A,
VCE = 5 V
IPCE min
IPCE max
IPCE
16
25
360
20
32
450
25
40
570
32
50
720
40
63
900
50
80
1140
A
A
A
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 k
tr, tf667788s
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) 0.3,
Ee = 0.1 mW/cm2
VCEsat 150 150 150 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 325, SFH 325 FA
2013-01-16 5
Relative Spectral Sensitivity,
SFH 325 Srel = f ()
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
0
OHF00207
400
S
rel
λ
nm
%
500 600 700 800 900 1100
10
20
30
40
50
60
70
80
100
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10 0
10 1
10 2
10 3
-25
nA
0 25 50 75 100
˚C
Relative Spectral Sensitivity,
SFH 325 FA Srel = f ()
Photocurrent
IPCE = f (VCE), Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
λ
OHF00468
0
rel
S
400
20
40
60
80
%
100
nm500 600 700 800 900 1100
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2013-01-16 6
SFH 325, SFH 325 FA
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
GPLY6068
(R1)
Collector marking
Collector Emitter
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
0.9 (0.035)
1.1 (0.043)
spacing
2.54 (0.100)
0.7 (0.028)
(2.85 (0.112))
(1.4 (0.055))
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
3.8 (0.150)
4.2 (0.165)
(2.9 (0.114))
SFH 325, SFH 325 FA
2013-01-16 7
Empfohlenes Lötpaddesign
Recommended Solderpad Design
Maße in mm (inch) / Dimensions in mm (inch).
3.7 (0.146)
1.2 (0.047)
3.0 (0.118)
Cu-area > 16 mm
Cu-Fläche > 16 mm
Paddesign
for improved
heat dissipation
Wärmeableitung
für verbesserte
Padgeometrie
Lötstopplack
Solder resist
OHLPY965
2
2
2013-01-16 8
SFH 325, SFH 325 FA
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020D.01)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020D.01)
Profileigenschaften
Profile Feature
Bleifreier Aufbau / Pb-Free Assembly (SnAgCu)
Empfehlung / Recommendation Grenzwerte / Max. Ratings
Aufheizrate zum Vorwärmen*) /
Ramp-up rate to preheat*) 25 °C to 150 °C
2 K / s 3 K / s
Zeit ts von TSmin bis TSmax /
Time ts from TSmin to TSmax 150 °C to 200 °C
100 s min. 60 s max. 120 s
Aufheizrate zur Spitzentemperatur*) /
Ramp-up rate to peak*) 180 °C to TP
2 K / s 3 K / s
Liquidustemperatur TL /
Liquidus temperature TL
217 °C
Zeit tL über TL / Time tL above TL80 s max. 100 s
Spitzentemperatur TP / Peak temperature TP245 °C max. 250 °C
Verweilzeit tP innerhalb des spezifizierten
Spitzentemperaturbereichs TP - 5 K / Time tP within the
specified peak temperature range TP - 5 K
20 s min. 10 s max. 30 s
Abkühlrate*) / Ramp-down rate*) TP to 100 °C 3 K / s 4 K / s maximum
Zeitspanne von 25 °C bis zur Spitzentemperatur /
Time from 25 °C to peak temperature
max. 8 min.
Alle Temperaturen beziehen sich auf die Bauteilmitte, jeweils auf der Bauteiloberseite gemessen / All temperatures refer to the center of
the package, measured on the top of the package
* Steigungsberechnung T/t: t max. 5 s; erfüllt über den gesamten Temperaturbereich / slope calculation T/t: t max. 5 s; fulfillment
for the whole T-range
0
0s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
S
t
t
P
t
T
p
240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
SFH 325, SFH 325 FA
2013-01-16 9
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
2013-01-16 10
SFH 325, SFH 325 FA
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
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to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.