MSDM200
MSDM200 – Rev 0 www.microsemi.com
Oct, 2011 1/3
Module Type
TYPE VRRM VRSM
MSDM200-08
MSDM200-12
MSDM200-16
MSDM200-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
ID Three phase, full wave Tc=100℃ 200 A
IFSM t=10mS Tvj =45℃ 2240 A
i2t t=10mS Tvj =45℃ 25000 A2s
Visol a.c.50HZ;r.m.s.;1min 3000 V
Tvj -40 to +150 ℃
Tstg -40 to +125 ℃
Mt To terminals(M6) 5±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module (Approximately) 220 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c) Per diode 0.45 ℃/W
Rth(c-s) Module 0.025 ℃/W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 200 Am
p
Features
y Three phase brid ge rectifier
y Blocking voltage:80 0 to 1800V
y Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
y Glass passivated chip
y UL E243882 approved
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
y Input rectifiers for variable frequen cy drives
-
+
~
~
~
MSDM
Values
Symbol Conditions Min. Typ. Max. Units
VFM T=25℃ IF =200A － 1.31 1.45 V
IRD Tvj=25℃ VRD=VRRM
Tvj=150℃ VRD=VRRM － － 0.5
6 mA
mA
MSDM200
MSDM200 – Rev 0 www.microsemi.com
Oct, 2011 2/3
Performance Curves
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
g
2. Power dissi
p
ation
Fig4. Max Non-Repetitive Forward Surge
Current
Fig5.Forward Current Derating Curve
0 VF 0.5 1.0 1.5 V 2.0
1 10 cycles 100
0 Tc 50 100 ℃150
0.001 0.01 0.1 1.0 10 S 100
0 ID 100 A 200
50HZ
300
A
200
100
IF
0
25℃
- - -125℃
max.
typ.
3000
A
2250
1500
750
0
0.5
℃/ W
0.25
0
250
A
200
150
100
50
ID
0
Zth(j-C)
480
W
240
Pvtot
0
MSDM200
MSDM200 – Rev 0 www.microsemi.com
Oct, 2011 3/3
Package Outline Information
CASE：M3-1
Dimensions in mm
C D E
AB
1
2
3
4
5
6
