QM800HA-24 - Mitsubishi Electric

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM800HA-24B

HIGH POWER SWITCHING USE

INSULATED TYPE

QM800HA-24B

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

APPLICATION

AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders

145

9

19 28

27

3728

8–φ6.5

74

3973

74

6565

27

9

163

51 47 25

B

E

BX

C

E

16 316 334 334

3–M4 2–M8

45

50MAX.

47MAX.

44.5

42

8

B

BX

E

C

LABEL

•ICCollector current ........................ 800A

•VCEX Collector-emitter voltage ......... 1200V

•hFE DC current gain............................. 750

•Insulated Type

•UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

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Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM800HA-24B

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Tj

Tstg

Viso

—

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current

(forward diode current)

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

Conditions

IC=1A, VEB=2V

VEB=2V

Emitter open

Collector open

DC

DC (forward diode current)

TC=25°C

DC

Peak value of one cycle of 60Hz (half wave)

Charged part to case, AC for 1 minute

Main terminal screw M8

Mounting screw M6

B(E) terminal screw M4

BX terminal screw M4

Typical value

Ratings

1200

7

800

5300

40

8000

–40~+150

–40~+125

2500

8.83~10.8

90~110

1.96~2.94

20~30

0.98~1.47

12~18

0.98~1.47

12~18

2100

Unit

V

A

W

A

°C

V

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

N·m

kg·cm

g

ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted)

Unit

mA

V

—

µs

°C/W

Limits

Min.

—

750

—

Symbol

ICEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Parameter

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance

(junction to case)

Contact thermal resistance

(case to fin)

Test conditions

VCE=1200V, VEB=2V

VCB=1200V,Emitter open

VEB=7V, Collector open

IC=800A, IB=1.06A

IC=–800A (diode forward voltage)

IC=800A, VCE=4.0V

VCC=600V, IC=800A, IB1=1.6A, –IB2=16A

Transistor part

Diode part

Conductive grease applied

Typ.

—

Max.

8.0

600

4.0

4.2

1.8

—

2.5

20

5.0

0.023

0.12

0.01

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Feb.1999

7

5

4

3

2

7

5

4

3

2

2.6 3.0 3.4 3.8

V

CE

=4V

T

j

=25°C

4.2 4.6

–1

10

0

10

1

10

–2

10

753275327532

5

4

3

2

1

0

T

j

=25°C

T

j

=125°C

0

10

–1

10

1

10

I

C

=600A

I

C

=1000A

I

C

=800A

23457

7

5

4

3

2

7

5

4

3

2

23457

T

j

=25°C

T

j

=125°C

4

10

3

10

2

10

1

10

2

10

3

10

V

CE

=4.0V

7

5

4

3

2

7

5

4

3

2

23457 23457

T

j

=25°C

T

j

=125°C

–1

10

I

B

=1.06A

V

BE(sat)

V

CE(sat)

1

10

0

10

1

10

2

10

3

10

7

5

4

3

2

7

5

4

3

2

0 0.4 0.8 1.2 1.6 2.0

T

j

=25°C

T

j

=125°C

1

10

2

10

3

10

1000

800

600

400

200

0012345

T

j

=25°C

I

B

=250mA

I

B

=1.06A

I

B

=4A

I

B

=0.5A

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

COLLECTOR CURRENT IC (A)

DC CURRENT GAIN hFE

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

BASE CURRENT IB (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE VCE (sat) (V)

SATURATION VOLTAGE VCE (sat), VBE (sat) (V)

COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)

BASE CURRENT IB (A)

MITSUBISHI TRANSISTOR MODULES

QM800HA-24B

HIGH POWER SWITCHING USE

INSULATED TYPE

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

CHARACTERISTICS) (TYPICAL)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

COLLECTOR REVERSE CURRENT –IC (A)

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Feb.1999

1600

00

400

800

1200

400 800 1200 1600

T

j

=125°C

I

B

=–16A

MITSUBISHI TRANSISTOR MODULES

QM800HA-24B

HIGH POWER SWITCHING USE

INSULATED TYPE

REVERSE BIAS SAFE OPERATING AREA

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT IC (A)

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