© Semiconductor Components Industries, LLC, 20008
November, 2008 Rev. 4
1Publication Order Number:
MCR72/D
MCR72-3, MCR72-6,
MCR72-8
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Features
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter
Uniformity and Stability
Small, Rugged Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
PbFree Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave,
50 Hz to 60 Hz) MCR723
MCR726
MCR728
VDRM,
VRRM 100
400
600
V
On-State RMS Current
(180° Conduction Angles; TC = 83°C)
IT(RMS) 8.0 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = 110°C)
ITSM 100 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s
Forward Peak Gate Voltage
(t 10 ms, TC = 83°C)
VGM "5.0 V
Forward Peak Gate Current
(t 10 ms, TC = 83°C)
IGM 1.0 A
Forward Peak Gate Power
(t 10 ms, TC = 83°C)
PGM 5.0 W
Average Gate Power (t = 8.3 ms, TC =
83°C)
PG(AV) 0.75 W
Operating Junction Temperature Range TJ40 to +110 °C
Storage Temperature Range Tstg 40 to +150 °C
Mounting Torque 8.0 in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
SCRs
8 AMPERES RMS
100 thru 600 VOLTS
K
G
A
TO220AB
CASE 221A07
STYLE 3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4 Anode
Preferred devices are recommended choices for future use
and best overall value.
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See detailed marking, ordering, and shipping information in
the package dimensions section on page 5 of this data sheet.
MARKING AND ORDERING INFORMATION
TO220AB
CASE 221A09
STYLE 3
123
123
MCR723, MCR726, MCR728
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2
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MCR723, MCR726, MCR728
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3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase RqJC 2.2 °C/W
Thermal Resistance, JunctiontoAmbient RqJA 60 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs TL260 °C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
(VAK = Rated VDRM or VRRM; RGK = 1 kW)T
J = 25°C
TJ = 110°C
IDRM, IRRM
10
500
mA
mA
High Logic Level Supply Current from VCC ICCH 4 4 mAmA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM = 16 A Peak, Pulse Width p1 ms, Duty Cycle p2%)
VTM 1.7 2.0 V
Gate Trigger Current (Continuous dc) (Note 3)
(VD = 12 V, RL = 100 W)
IGT 30 200 mA
Gate Trigger Voltage (Continuous dc) (Note 3)
(VD = 12 V, RL = 100 W)
VGT 0.5 1.5 V
Gate NonTrigger Voltage
(VD = 12 Vdc, RL = 100 W, TJ = 110°C)
VGD 0.1 V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, RGK = 1 kW)
IH 6.0 mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)
tgt 1.0 ms
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, RGK = 1 kW, TJ = 110°C, Exponential Waveform)
dv/dt 10 V/ms
2. Ratings apply for negative gate voltage or RGK = 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
3. RGK current not included in measurement.
MCR723, MCR726, MCR728
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4
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
IRRM at VRRM
(off state)
60°
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
70
80
90
100
2.0 4.00
110
6.0 0
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
0
4.0
P, AVERAGE POWER DISSIPATION (WATTS)
AV
α = 30°
90°
dc
8.06.04.02.0
8.0
12
16
TC, MAXIMUM CASE TEMPERATURE (C)
°
8.0
α = 30°
60°
90°
180°
dc
α = Conduction Angle
α = Conduction Angle
αα 180°
Figure 1. Average Current Derating Figure 2. OnState Power Dissipation
0.3
120
0.5
1.0
2.0
-40 -20 0 20 40 60 80 90 100
3.0
140
TJ, JUNCTION TEMPERATURE (°C)
0.6
0.1
0.2
0.3
0.4
0.5
40
0.7
-60 -40 -20 0 10020 60 80 120
VD = 12 Vdc
TJ, JUNCTION TEMPERATURE (°C)
NORMALIZED GATE CURRENT
V , GATE TRIGGER VOLTAGE (VOLTS)
GT
VD = 12 Vdc
Figure 3. Normalized Gate Current Figure 4. Gate Voltage
MCR723, MCR726, MCR728
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5
MARKING
DIAGRAMS
TO220AB
CASE 221A07
A = Assembly Location
Y = Year
WW = Work Week
MCR72x = Device Code
x = 3, 6, 8, or 8T
G=PbFree Package
AKA = Diode Polarity
TO220AB
CASE 221A09
A = Assembly Location
Y = Year
WW = Work Week
MCR726T = Device Code
G = PbFree Package
AKA = Diode Polarity
AY WW
MCR72xG
AKA
AY WW
MCR726TG
AKA
ORDERING INFORMATION
Device Package Shipping
MCR723TO220AB
500 Units / Box
MCR723G TO220AB
(PbFree)
MCR726TO220AB
MCR726G TO220AB
(PbFree)
MCR726T TO220AB
50 Units / Rail
MCR726TG
TO220AB
(PbFree)
MCR728TO220AB
500 Units / Box
MCR728G TO220AB
(PbFree)
MCR728T TO220AB
50 Units / Rail
MCR728TG
TO220AB
(PbFree)
MCR723, MCR726, MCR728
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6
PACKAGE DIMENSIONS
TO220
CASE 221A07
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
123
4
TSEATING
PLANE
S
R
J
U
TC
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
TO220
CASE 221A09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
MCR723, MCR726, MCR728
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7
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Phone: 421 33 790 2910
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Phone: 81357733850
MCR72/D
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