2SK2145
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK2145
Audio Frequency Low Noise Amplifier Applications
• Including two devices in SM5 (super mini type with 5 leads.)
• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, Rg = 1 kΩ
• High input impedance: IGSS = −1 nA (max) at VGS = −30 V
Marking Pin Assignment (top view)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD
(Note 1) 300 mW
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3L1C
Weight: 0.016 g (typ.)
Start of commercial production
1993-03
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Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate-leakage current IGSS VGS = −30 V, VDS = 0 ⎯ ⎯ −1.0 nA
Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = −100 μA −50 ⎯ ⎯ V
Drain current IDSS
(Note 2) VDS = 10 V, VGS = 0 1.2 ⎯ 14.0 mA
Gate-source cut-off voltage VGS (OFF) V
DS = 10 V, ID = 0.1 μA −0.2 ⎯ −1.5 V
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, VGS = 0, f = 1 kHz 4.0 15 ⎯ mS
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 13 ⎯ pF
Reverse transfer capacitance Crss V
DG = 10 V, ID = 0, f = 1 MHz ⎯ 3 ⎯ pF
NF (1)
VDS = 10 V, Rg = 1 kΩ
ID = 0.5 mA, f = 10 Hz ⎯ 5 ⎯
Noise figure
NF (2)
VDS = 10 V, Rg = 1 kΩ
ID = 0.5 mA, f = 1 kHz ⎯ 1 ⎯
dB
Note 2: IDSS classification Y (Y): 1.2 to 3.0 mA, GR (G): 2.6 to 6.5 mA, BL (L): 6.0 to 14.0 mA
( ) Marking symbol
2SK2145
2014-03-01
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(Q1, Q2 common)
2SK2145
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4
(Q1, Q2 common)
2SK2145
2014-03-01
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