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FQD19N10L / FQU19N10L

FQD19N10L / FQU19 N 10L

100V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as high efficiency

switching DC/DC converters, and DC motor control.

Features

• 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V

• Low gate charge ( typical 14 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximu m Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQD19N10L / FQU19N10L Units

VDSS Drain-Source Voltage 100 V

IDDrain Current - Continuous (TC = 25°C) 15.6 A

- Continuous (TC = 100°C) 9.8 A

IDM Drain Current - Pulsed (Note 1) 62.4 A

VGSS Gate-Source Voltage ± 20 V

EAS Single Pulsed Avalanche Energy (Note 2) 220 mJ

IAR Avalanche Current (Note 1) 15.6 A

EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

PDPower Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 50 W

- Derate above 25°C 0.4 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

I-PAK

FQU Series

D-P AK

FQD Series GS

Rev. A1. January 2009

•RoHS Compliant

January 2009

QFET

FQD19N10L / FQU19N10L

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.35mH, IAS = 15.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤19A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.09 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA

VDS = 80 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 7.8 A

VGS = 5 V, I D = 7.8 A -- 0.074

0.082 0.10

0.11 Ω

gFS Forward Transconductance VDS = 30 V, ID = 7.8 A -- 14 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 670 870 pF

Coss Output Capacitance -- 160 210 pF

Crss Reverse Transfer Capacit ance -- 35 45 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 50 V, ID = 19 A,

RG = 25 Ω

-- 14 38 ns

trTurn-On Rise Time -- 410 830 ns

td(off) Turn-Off De l a y Time -- 20 50 ns

tfTurn -Off Fall Time -- 14 0 290 n s

QgTotal Gate Cha rge VDS = 80 V, ID = 19 A,

VGS = 5 V

-- 14 18 nC

Qgs Gate-Source Charge -- 2.9 -- nC

Qgd Gate-Drain Charge -- 9.2 -- nC

Drain-Source Diod e Characteristics and Maxim um Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 15.6 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 62.4 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 15.6 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 19 A,

dIF / dt = 100 A/µs

-- 80 -- ns

Qrr Reverse Recovery Charge -- 0.195 -- µC

Rev. A1. January 2009

FQD19N10L / FQU19N10L

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10-1

100

101

150℃

※ No tes :

1. VGS = 0V

2. 250μ

s Pu lse T es t

25℃

IDR, Reverse Drain Current [A]

VSD, So urce-Dr a in voltage [ V ]

0 5 10 15 20 25

VDS = 50V

VDS = 80V

※ Note : ID = 19A

VGS, Gate-Source Voltage [V]

QG, Total Gate Ch a rg e [nC]

10-1 100101

300

600

900

1200

1500

1800 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. V GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

01530456075

0.00

0.06

0.12

0.18

0.24

0.30

VGS = 10V

VGS = 5V

※ N ote : T J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, D r a i n Current [A]

0246810

10-1

100

101

※ Note s :

1 . VDS = 30V

2. 250μ

s Pulse Test

-55℃

150℃

25℃

ID , Drain Cu rr e n t [A ]

VGS , Gate-Sou rce Voltage [V]

10-1 100101

100

101

VGS

To p : 10 .0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V

Bo tto m : 3 .0 V

※ Notes :

1. 250μ

s Pu lse Te st

2. TC = 25℃

ID, Drain Current [A ]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitance C haracterist i cs Figure 6. Ga te Ch arge Chara ct eri stics

Figu re 3. On-R esistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i stic s

Rev. A1. January 2009

FQD19N10L / FQU19N10L

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No te s :

1 . ZθJC(t) = 2.5 ℃/W M a x .

2 . D uty Fa c t o r, D = t1/t2

3 . TJM - T C = P DM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Therm al Response

t1, Sq u a re W a ve P u lse Du ra tio n [se c ]

25 50 75 100 125 150

ID, Drain Current [A ]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

10 µs

DC 10 m s

1 ms 100 µs

Op eration in Th is A r e a

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Cu rrent [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ No tes :

1. VGS = 10 V

2. ID = 7.8 A

RDS(ON) , (N o r maliz ed)

Drain-Source On-Resistance

TJ, Junction Tem p erature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = 250 μ

BV DSS , (N ormaliz e d )

Drain-Sou rce Breakdow n V oltage

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Br ea kdown Voltag e Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Response Curve

PDM

Rev. A1. January 2009

FQD19N10L / FQU19N10L

Charge

VGS

5V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

5V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resist iv e Swi tc hi ng Tes t Ci rcuit & Wavefor m s

Unclamped Inductive Switching Test Circuit & Waveforms

Rev. A1. January 2009

FQD19N10L / FQU19N10L

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Typ e

as DUT

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Typ e

as DUT

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

Rev. A1. January 2009

FQD19N10L / FQU19N10L

Package Dimensions

Rev. A1. January 2009

TO-252 (DPAK) (FS PKG Code 36)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

millimeters

Par t Weight per unit (gram): 0.33

FQD19N10L / FQU19N10L

Package Dimensions (Continued)

6.60 ±0.20

0.76 ±0.10

MAX0.96

2.30TYP

[2.30±0.20] 2.30TYP

[2.30±0.20]

0.60 ±0.20

0.80 ±0.10

1.80 ±0.20

9.30 ±0.30

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

5.34 ±0.20

0.50 ±0.10

2.30 ±0.20

(0.50) (0.50)(4.34)

IPAK

Rev. A1. January 2009

Rev. I37

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Rev. A1. January 2009