PSKD 72 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol IFRMS IFAVM IFSM i2dt Type 3 1 TO-240 AA 2 1 Test Conditions TVJ = TVJM TC = 92C; 180 sine TC = 100C; 180 sine Maximum Ratings 180 A 113 A 99 A TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t t t t = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), sine sine sine sine 1700 1950 1540 1800 14 15 11 13 A A A A 450 700 850 400 A 2s A 2s A 2s A 2s -40...+150 150 -40...+125 C C C 3 3000 3600 V~ V~ Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies VISOL 50/60 Hz, RMS IISOL 1 mA Md Weight Mounting torque (M5) Terminal connection torque (M5) Typical including screws Symbol IR Test Conditions TVJ = TVJM; VR = VRRM VF IF = 300 A; TVJ = 25C 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 2.3 V m QS IRM TVJ = 125C; IF = 50 A, -di/dt = 3 A/s 170 45 C A RthJC per per per per 0.35 0.175 0.55 0.275 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s 2 dS dA a 2 PSKD 72/08 PSKD 72/12 PSKD 72/14 PSKD 72/16 PSKD 72/18 TVJ TVJM Tstg RthJK = 2x 180 A = 2x 113 A = 800-1800 V t = 1 min t=1s diode; DC current module diode; DC current module 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g Characteristic Values 15 mA other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 2 i2dt versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load Circuit B2 2 x PSKD 72 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKD 72 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.35 0.37 0.39 0.43 0.47 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.013 0.072 0.265 0.0014 0.062 0.375 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.55 0.57 0.59 0.63 0.67 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.013 0.072 0.265 0.2 0.0014 0.062 0.375 1.32 POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/