Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 22
IC @ TC = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current 44
ILM Clamped Inductive Load Current 44
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 5.0 mJ
PD @ TC = 25°C Maximum Power Dissipation 66
PD @ TC = 100°C Maximum Power Dissipation 26
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) °C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4RC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
Features
• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation IGBTs.
• Industry standard TO-252AA package
• Combines very low VCE(on) with low switching
losses
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
Benefits
VCES = 600V
VCE(on) typ. = 1.82V
@VGE = 15V, IC = 12A
Thermal Resistance
Absolute Maximum Ratings
W
2/22/01
D-Pak
TO-252AA
°C/W
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
RθJA Junction-to-Ambient (PCB mount)* ––– 50
Wt Weight 0.3 (0.01) ––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
N-channel
PD - 91731A
IRG4RC20F
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA
— 1.82 2.1 IC = 12A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 2.42 — IC = 2 2 A See Fig.2, 5
— 2.04 — IC = 12A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -1 1 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 5.2 7.75 — S VCE = 100V, IC = 12A
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 27 40 IC = 12A
Qge Gate - Emitter Charge (turn-on) — 4.8 6.8 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 11.4 17 VGE = 15V
td(on) Turn-On Delay Time — 26 —
trRise Time — 24 — TJ = 25°C
td(off) Turn-Off Delay Time — 194 290 IC = 12A, VCC = 480V
tfFall Time — 22 6 340 VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss — 0.19 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.92 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 1.11 1.4
td(on) Turn-On Delay Time — 25 — TJ = 150°C,
trRise Time — 26 — IC = 12A, VCC = 480V
td(off) Turn-Off Delay Time — 263 — VGE = 15V, RG = 50Ω
tfFall Time — 443 — Energy losses include "tail"
Ets Total Switching Loss — 1.89 — mJ See Fig. 11, 14
LEInternal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 540 — VGE = 0V
Coes Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 7.0 — ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width 5.0µs, single shot.
IRG4RC20F
www.irf.com 3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
6 8 10 12 14
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5
µ
s PULSE WIDTH
CC
T = 25 C
J°
T = 150 C
J°
0
10
20
30
0.1 1 10 100
f, Frequency (kHz)
Load C urrent (A )
A
60% of rated
volta ge
Ideal diodes
Sq uar e wa ve:
Fo r bot h:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as sp ecif i ed
sink
J
T r ian gular w ave:
Clamp v oltage:
80% of rated
Power Dissipat io n = 15W
1
10
100
12345
CE
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
V = 15V
20µs PULSE WIDTH
GE
A
T = 25°C
J
T = 150°C
J
IRG4RC20F
4www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A4.5
C
I = A9
C
I = A18
C
25 50 75 100 125 150
0
5
10
15
20
25
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4RC20F
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
010 20 30 40 50
0.66
0.67
0.68
0.70
0.71
0.72
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 9.0A
CC
GE
J
C
°
1 10 100
0
200
400
600
800
1000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c
Cies
Coes
Cres
0 5 10 15 20 25 30
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 12A
CC
C
( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = 50Ohm
V = 15V
V = 480V
G
GE
CC
I = A
24
C
I = A
12
C
I = A
6
C
50Ω
IRG4RC20F
6www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current Fig. 12 - Turn-Off SOA
480V
4 X IC@25°C
D.U.T.
50V
LV *
C
* Driver same t
y
p
e as D.U.T.; Vc = 80% of Vce
(
max
)
* No te: D ue to th e 50V
p
ower s u
p
p
l
y
,
p
ulse width and inductor
will incre as e t o o btain rat e d I d.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V RL =
50V
Driver*
1000V
D.U.T.
I
C
C
V
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
510 15 20 25
0.0
1.0
2.0
3.0
4.0
5.0
I , Collector Current (A)
Total Switching Losses (mJ)
C
R = 50Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
50 Ω
IRG4RC20F
www.irf.com 7
t=5µs
d(on)
tt
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts o n o ff
E = (E + E )
Fig. 14b - Switching Loss
Waveforms
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
6.22 (.245)
5.97 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 ( .0 10 ) M A M B
4.57 (.180)
2.28 (.090)
2X 1.14 (.045)
0.76 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.040)
1.64 (.025)
5.46 (.215 )
5.21 (.205 ) 1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245 )
5.68 (.224 )
0.51 (.020 )
MIN .
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENS IONING & TOLERANCING PE R ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORM S TO J EDE C OUT L INE T O-2 52 AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
S OLDER DIP MA X. +0.1 6 ( .0 06 ) .
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
IRG4RC20F
8www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
TR
16 .3 ( .6 4 1 )
15 .7 ( .6 1 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
1 2.1 ( .4 7 6 )
1 1.9 ( .4 6 9 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NO TES :
1. CO NTRO LLING DIMENSIO N : MILLIM ETER.
2. ALL D IM EN SIO N S ARE SH O WN IN MILLIM ET ER S ( IN C H ES ).
3. OU TL IN E C O N F O R MS TO E IA-4 81 & EIA-541.
NOTES :
1 . OUTL INE CONFORMS TO EIA- 4 8 1 .
16 m m
1 3 IN CH
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/01
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
