Data Sheet
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Schottky Barrier Diode
RB425D
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low power rectification
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planer Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C) Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit
VF1- - 0.55 V IF=100mA
VF2- - 0.34 V IF=10mA
Reverse current IR1--30μAV
R=10V
Capacitance between terminals Ct1 - 6 - pF VR=10V , f=1MHz
Parameter
Forward voltage
Conditions
Storage temperature 40 to 125
(*1) Rating of per diode:Io/2
Forward current surge peak (60Hz・1cyc) (*1) 1
Junction temperature 125
Reverse voltage (DC) 40
Average rectified forward current (*1) 100
Parameter Limits
Reverse voltage (repetitive peak) 40
SMD3
1.0MIN.
0.8MIN.
2.4
0.95
1.9
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
1.35±0.1
3.2±0.1
φ1.05MIN
3.2±0.1
0.3±0.1
5.5±0.2
0~0.5
ROHM : SMD3
JEITA : SC-59
week code
JEDEC :S0T-346
0.4
+0.1
-0.06
2.9±0.2
2.8±0.2
1.9±0.2
1.6
+0.2
-0.1
0.95 0.95
+0.1
-0.0 5
各リードとも
同寸法
0~0.1
0.15
1.1±0.2
0. 01
0.8±0.1
(2) (1)
(3)
0.3~0.6
Each lead has same dimension
1/3 2011.04 - Rev.B