Data Sheet Schottky Barrier Diode RB425D Applications Low power rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1 2.90.2 Each lead has same dimension 0.4 0.05 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 1.0MIN. 0.2 1.60.1 2.80.2 0.95 0.1 0.15 0.06 (3) 0.8MIN. 00.1 (1) 0.95 0.80.1 0.95 1.10.2 0.01 1.90.2 SMD3 0.30.6 (2) Construction Silicon epitaxial planer 2.4 1.9 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 1.50.1 0 2.00.05 0.30.1 Io IFSM Tj Tstg 3.20.1 5.50.2 3.50.05 Limits 40 40 100 1 125 40 to 125 Symbol VRM VR 00.5 3.20.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature 1.05MIN 4.00.1 3.20.1 8.00.2 1.750.1 4.00.1 1.350.1 Unit V V mA A C C (*1) Rating of per diodeIo/2 Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Conditions Symbol VF 1 VF 2 IR1 Min. Typ. Max. Unit - - 0.55 0.34 30 V V A IF=100mA IF=10mA VR=10V Ct1 - 6 - pF VR=10V , f=1MHz 1/3 2011.04 - Rev.B Data Sheet RB425D 10000 REVERSE CURRENT:IR(uA) Ta=75 1 Ta=25 Ta=-25 0.1 0.01 0 100 200 300 400 500 1000 Ta=75 100 Ta=25 10 1 Ta=-25 0.1 0 5 10 15 20 25 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 450 440 430 300 290 280 270 AVE:281.5mV 260 420 7 6 5 AVE:6.09pF 4 3 2 1 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP 10 AVE:2.548uA 5 20 15 10 5 AVE:6.20ns 0 trr DISPERSION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 5 0 1000 Ifsm t 10 5 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 IFSM DISPERSION MAP 15 0.1 15 30 0 0 10 20 IR DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 8 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 f=1MHz VR=10V n=10pcs 9 Ta=25 VR=10V n=10pcs 0 20 10 100 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 30 25 VF DISPERSION MAP VF DISPERSION MAP 20 30 REVERSE CURRENT:IR(uA) 460 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25 IF=10mA n=30pcs D2 AVE:439.5mV CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 35 310 Ta=25 IF=100mA n=30pcs D1 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 10 1 0.01 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz TRANSIENT THAERMAL IMPEDANCE:Rth (/W) FORWARD CURRENT:IF(mA) 10 100 Ta=125 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 300us 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS 2011.04 - Rev.B Data Sheet RB425D 0.07 Per chip 0.06 DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.08 D=1/2 0.06 Sin(180) 0.04 0.3 Per chip Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 0.05 0.04 Sin(180) 0.03 D=1/2 DC 0.02 0.02 0.01 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.2 0 0A 0V 0.25 0.2 Io t DC T VR D=t/T VR=15V Tj=125 0.15 D=1/2 0.1 0.05 Sin(180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per chip 0A 0V 0.25 0.2 Io t DC T 0.15 VR D=t/T VR=15V Tj=125 D=1/2 0.1 0.05 Sin(180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A