Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.4 GHz
• 12.0 dB Typical Gain at
1.0 GHz
• 10.0 dBm Typical P1 dB at
1.0 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
MSA-0386
86 Plastic PackageDescription
The MSA-0386 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
7 V
V
d
= 5 V
RFC (Optional)
IN OUT
MSA
4
12
3
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Surface
Mount Semiconductors”.
2
MSA-0386 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 70 mA
Power Dissipation[2,3] 400 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 9.5 mW/°C for TC > 116°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0386-TR1 1000 7" Reel
MSA-0386-BLK 100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
GPPower Gain (|S21|2) f = 0.1 GHz dB 12.5
f = 1.0 GHz 10.0 12.0
∆GPGain Flatness f = 0.1 to 1.6 GHz dB ±0.7
f3 dB 3 dB Bandwidth GHz 2.4
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
IP3Third Order Intercept Point f = 1.0 GHz dBm 23.0
tDGroup Delay f = 1.0 GHz psec 140
VdDevice Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 ΩUnits Min. Typ. Max.
VSWR
3
MSA-0386 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .11 174 12.5 4.22 175 –18.3 .122 1 .13 –11
0.2 .11 169 12.5 4.20 170 –18.2 .124 2 .13 –20
0.4 .11 159 12.4 4.16 159 –18.1 .124 5 .14 –41
0.6 .10 149 12.2 4.09 149 –17.9 .128 8 .15 –60
0.8 .10 142 12.1 4.00 139 –17.6 .131 9 .16 –78
1.0 .09 137 11.9 3.93 129 –17.4 .136 11 .18 –93
1.5 .09 139 11.2 3.61 106 –16.6 .149 14 .20 –129
2.0 .12 149 10.3 3.28 83 –15.3 .171 13 .23 –157
2.5 .18 150 9.4 2.95 66 –14.4 .190 12 .26 –176
3.0 .25 142 8.3 2.60 48 –13.7 .207 9 .29 167
3.5 .32 133 7.2 2.29 31 –13.2 .219 3 .30 152
4.0 .40 124 6.0 2.01 15 –13.0 .224 –1 .31 142
5.0 .53 106 3.7 1.53 –13 –12.8 .228 –11 .32 128
A model for this device is available in the DEVICE MODELS section.
S11 S21 S12 S22
G
p,
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY, (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C.
0
2
4
6
8
10
12
14
Gain Flat to DC
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
60
I
d
(mA)
0 234561
40
50 T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
5
6
7
11
12
13
–25 0 +25 +55 +85
8
9
10
11
P
1 dB
(dBm)
NF (dB)
G
P
NF
G
p
(dB)
TEMPERATURE (°C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=35mA.
P
1 dB
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
I
d
= 50 mA
I
d
= 20 mA
I
d
= 35 mA
5.5
5.0
6.0
6.5
7.0
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0
NF (dB)
I
d
= 20 mA
I
d
= 35 mA
I
d
= 50 mA
Typical Performance, TA = 25°C
(unless otherwise noted)
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-9571E (11/99)
86 Plastic Package Dimensions
4
0.51 ± 0.13
(0.020 ± 0.005)
2.34 ± 0.38
(0.092 ± 0.015)
2.67 ± 0.38
(0.105 ± 0.15)
13
2
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
0.30 MIN
(0.012 MIN)
C
L
45°
5° TYP.
8° MAX
0° MIN
GROUND
RF INPUT
RF OUTPUT
AND DC BIAS
GROUND
A03
