BFP620_E7764
Jul-03-2003
1
NPN Silicon Germanium RF Transistor
High gain low noise RF transistor
Provides outstanding performance
for a wide range of wireless applications
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
Gold metallization for extra high reliability
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620_E7764 R2s 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 2.3 V
Collector-emitter voltage VCES 7.5
Collector-base voltage VCBO 7.5
Emitter-base voltage VEBO 1.2
Collector current IC80 mA
Base current IB3
Total power dissipation1)
TS
95°C
Ptot 185 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS
300 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFP620_E7764
Jul-03-2003
2
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 2.3 2.8 - V
Collector-emitter cutoff current
VCE = 7.5 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 3 µA
DC current gain
IC = 50 mA, VCE = 1.5 V
hFE 100 180 320 -
BFP620_E7764
Jul-03-2003
3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 1.5 V, f = 1 GHz
fT- 65 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Ccb - 0.12 0.2 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz
Cce - 0.22 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 0.46 -
Noise figure
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt
F
-
-
0.7
1.3
-
-
dB
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21.5 - dB
Power gain, maximum available1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma - 11 - dB
Transducer gain
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50
,
f = 1.8 GHz
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50
,
f = 6 GHz
|S21e|2
-
-
20
9.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 50 mA, f = 1.8 GHz,
ZS = ZL = 50
IP3- 25 - dBm
1dB Compression point at output
IC = 50 mA, VCE = 2 V, ZS = ZL = 50
,
f = 1.8 GHz
P-1dB - 15 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
BFP620_E7764
Jul-03-2003
4
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS = 0.22 fA
VAF = 1000 V
NE = 2-
VAR = 2V
NC = 2-
RBM = 2.707
CJE = 250.7 fF
TF = 1.43 ps
ITF = 2.4 A
VJC = 0.6 V
TR = 0.2 ns
MJS = 0.5 -
XTI = 3-
AF = 2 -
TITF1 -0.0065 -
BF = 425 -
IKF = 0.25 A
BR = 50 -
IKR = 10 mA
RB = 3.129
RE = 0.6 -
VJE = 0.75 V
XTF = 10 -
PTF = 0 deg
MJC = 0.5 -
CJS = 128.1 fF
NK = -1.42 -
FC = 0.8
KF = 7.291E-11
TITF2 1.0E-5
NF = 1.025 -
ISE = 21 fA
NR = 1-
ISC = 18 pA
IRB = 1.522 mA
RC = 2.364
MJE = 0.3 -
VTF = 1.5 V
CJC = 124.9 fF
XCJC = 1-
VJS = 0.52 V
EG = 1.078 eV
TNOM 298 K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
B C
E
CCEOCBEO
CCEICBEI
CBEC
CBCC
S
C
B
E
BFP620_C hip
LBC
LC C
LEC
RCBS
RCCS
RCES
LBB LC B
LEB
Itf = 2400* ( 1 - 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 )
T = 25°C
LBC = 60 pH
LCC = 50 pH
LEC = 15 pH
LBB = 764.5 pH
LCB = 725.4 pH
LEB = 259.6 pH
CBEC = 98.4 fF
CBCC = 55.9 fF
CES = 140 fF
CBS = 54 fF
CCS = 50 fF
CCEO = 106.5 fF
CBEO = 106.7 fF
CCEI = 132.4 fF
CBEI = 99.6 fF
RBS = 1200
RCS = 1200
RES = 300
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
BFP620_E7764
Jul-03-2003
5
Total power dissipation Ptot =
(TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mW
200
Ptot
Permissible Pulse Load RthJS =
(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
1
10
2
10
3
10
K/W
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC =
(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0,01
0,02
0,05
0,1
0,2
0,5
Collector-base capacitance Ccb=
(VCB)
f = 1MHz
012345V7
VCB
0
0.05
0.1
0.15
0.2
0.25
0.3
pF
0.4
CCB
BFP620_E7764
Jul-03-2003
6
Third order Intercept Point IP3=
(IC)
(Output, ZS=ZL=50
)
VCE = parameter, f = 900MHz -
0 10 20 30 40 50 60 70 80 mA 100
IC
0
3
6
9
12
15
18
21
dBm
27
IP3
0.8V
1.3V
1.8V
2.3V
Transition frequency fT=
(IC)
f = 1GHz
VCE = Parameter in V
0 10 20 30 40 50 60 70 80 mA 100
IC
0
5
10
15
20
25
30
35
40
45
50
55
GHz
65
fT
0.3
0.5
0.8
1
1.3 to 2.3
Power gain Gma, Gms =
(IC)
VCE = 1.5V
f = Parameter in GHz
0 10 20 30 40 50 60 70 mA 90
IC
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9
1.8
2.4
3
4
5
6
Power Gain Gma, Gms =
(f),
|S21|² = f (f)
VCE = 1.5V, IC = 50mA
01234GHz 6
f
5
10
15
20
25
30
35
40
45
dB
55
G
|S21|²
Gms
Gma
BFP620_E7764
Jul-03-2003
7
Power gain Gma, Gms =
(VCE)
IC = 50mA
f = Parameter in GHz
0.2 0.6 1 1.4 1.8 V2.6
VCE
-5
0
5
10
15
20
dB
30
G
0.9
1.8
2.4
3
4
5
6
