QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3
August 2008
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR
Surface Mount Silicon Pin Photodiode
Features
■
Daylight Filter (QSB34GR and QSB34ZR only)
■
Surface Mount Packages:
– QSB34GR/QSB34CGR for overmount board
– QSB34ZR/QSB34CZR for undermount board
■
Fast PIN Photodiode
■
Wide Reception Angle, 120°
■
Large Chip Size = 3mm x 3mm
■
Sensitive Area - 2.55mm x 2.55mm
■
High Sensitivity
■
Low Capacitance
■
Available in 0.470" (12mm) width tape on 7" (178mm)
diameter reel; 1,000 units per reel
Package Dimensions, QSB34GR
4.50
4.30
0.90
0.70
4.00
3.80
6.70
6.10
4.00
3.80
1.70
1.50
0.175
1.50
0.10
Min
0.80
0.70
Photosensitive surface
0.17
0.13 1.20
0–5°
Anode
Package
Center
Chip Center
Chip
Notes:
1.Dimensions for all drawings are in mm.
2.Tolerance of ±.0.13 on all non-nominal dimensions unless otherwise specified.
Schematic
ANODE
CATHODE
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3 2
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. Soldering time
≤
5 seconds
Electrical/Optical Characteristics
(T
A
=25°C unless otherwise specified)
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Parameter Rating Unit
T
OPR
Operating Temperature -25 to +85 °C
T
STG
Storage Temperature -40 to +85 °C
T
SOL
Soldering Temperature 260 °C
V
R
Reverse Voltage 32 V
P
C
Power Dissipation at (or below) 25°C
Free Air Temperature
150 mW
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
R
Reverse Voltage I
R
= 0.1mA 32 V
I
R(D)
Dark Reverse Current V
R
= 10V 30 nA
λ
PK
Peak Sensitivity V
R
= 5V 940 nm
Θ
Reception Angle @ 1/2 Power ±60 °
I
PH
Photo Current Ee = 1.0mW/cm
2
, V
CE
= 5V
(4)
25 37 µA
CCapacitance V
R
= 3V 25 pF
t
r
Rise Time V
R
= 10V, R
L
= 50
Ω
50 ns
t
f
Fall Time V
R
= 10V, R
L
= 50
Ω
50 ns
λ
0.5
Spectral Sensitivity
QSB34GR, QSB34ZR
QSB34CGR, QSB34CZR
730
400
1100
1100
nm
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3 3
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
Typical Performance Curves
Fig. 1 Relative Spectral Sensitivity vs. Wavelength
80
60
40
20
0
0 0.5 1.0 1.5
Ee - IRRADIANCE (mW/cm2)
Fig. 2 Short Circuit Current vs. Irradiance
ISC - SHORT CIRCUIR CURRENT (µA)
Ta = 25°C
QSB34CGR,
QSB34CZR
100 300 500 700 900 1100 1300
λ – WAVELENGTH (nm)
RELATIVE SPECTRAL SENSITIVITY
0
0.2
0.4
0.6
0.8
1.0
VR = 5V
λ = 940nm
QSB34GR,
QSB34ZR
TA -TEMPERATURE (°C)
Fig. 4 Dark Current vs. Temperature
IR - DARK CURRENT (nA)
VR - REVERSE VOLTAGE (V)
Fig. 5 Dark Current vs. Reverse Voltage
IR -DARK CURRENT (pA)
VR - REVERSE VOLTAGE (V)
Fig. 3 Capacitance vs. Reverse Voltage
CAPACITANCE (pF)
80
60
40
20
0
0.1 1 10 100
f = 1 MHz
H = 0mW/cm2
1000
100
10
1
20 40 60 80 100
VR = 10 V
Ee = 0mV/cm2
1200
1000
800
600
400
200
0
02468101214161820
Ee = 0mV/cm2
LOAD RESISTANCE RL (Ω)
Fig. 6 Response Time vs. Load Resistance
RESPONSE TIME tr, ff (µs)
10-3
10-2
10-1
100
101
101102103104105
VR = 10V
TA = 25°C
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3 4
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
Package Dimensions
Package Dimensions, QSB34ZR
Recommend IR Reflow Soldering Profile
Recommended Solder Screen
Pattern (For Reference Only)
4.50
4.30
0.90
0.70
4.00
3.80
6.70
6.10
1.10
0.90
1.70
1.50
0.20
0.10
0.012 (0.30)
1.20
0.10
0–5°
Anode
Photosensitive
surface
1.50
Package
Center
Chip Center
0.175
Chip
Note:
1. All dimensions in mm
2. Pattern applies to both QSB34GR and QSB34ZR
7.4
4.3
1.55
1.8
Note:
1. Dimensions for all drawings are in mm.
2. Tolerance of ±.0.13 on all non-nominal dimensions unless otherwise specified.
1 ~ 3°C/sec.
Pre-heating
180 ~ 200°C
260°C Max.
120sec. Max.
60sec. Max.
Above 220°C
10sec. Max.
1 ~ 3°C/sec.
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3 5
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode
Ordering Information
Tape & Reel Dimensions
Option Description
QSB34GR Gullwing, 1000 units per reel
QSB34ZR Z-Bend reversed, 1000 units per reel
QSB34CGR Gullwing, 1000 units per reel
QSB34CZR Z-Bend reversed, 1000 units per reel
2.50
±
0.5
2.50
±
±
0.5
Ø
1
3
0
.
5
1
3
.
2
1.
5
1
6
.
0
±
0
.
2
Ø
1
7
8
±
1
.
0
Ø
60
.2
±
0
.
5
Ø1.5±0.1
CATHODE
Unit: mm
COVER TAPE Ø1.50±0.25
2.0±0.05
8.0±0.10 1.45±0.10
9°
6.90±0.10
5.5±0.05 1.75±0.10
12 +0.3
–0.1
4.0±0.10
4.20±0.10
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3 6
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Rev. I35
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR — Surface Mount Silicon Pin Photodiode